MMDT3946
MMDT3946
SOT-363 Plastic-Encapsulate Transistors
DUAL TRANSISTOR(NPN+PNP)
FEATURES
z Complementary Pair
z Epitaxial Planar Die Construction
z Ideal for low Power Amplification and Switching
z One 3904(NPN), one 3906(PNP)
MAXIMUM RATINGS of TR1(NPN)3904(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
200
mA
PC
Collector Power Dissipation
200
mW
Thermal Resistance From Junction To Ambient
625
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
SOT-363
MARKING: K46
6
●
1
5
4
K46
2
3
ELECTRICAL CHARACTERISTICS of TR1(NPN)3904(Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10µA, IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
5
V
500
nA
Collector cut-off current
ICEO
=
VCE=30V, IB 0
Collector cut-off current
ICBO
VCB= 30V, IE=0
50
nA
Emitter cut-off current
IEBO
hFE(1)
VEB=5V, IC=0
50
nA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)
VBE(sat)
VCE=1V, IC=0.1mA
40
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, IB=1mA
70
100
60
30
fT
VCE=20V,IC=20mA, f=100MHz
Collector output capacitance
Cob
Noise figure
NF
VCB=5V, IE=0, f= 1MHz
VCE=5V, IC=0.1mA, f=1KHz,
Rg=1KΩ,△f=200MHz
VCC=3V, VBE(off)=0.5V IC=10mA,
IB1=1mA
VCC=3V, VBE(off)=0.5V IC=10mA,
IB1=1mA
td
Rise time
tr
Storage time
ts
Fall time
tf
0.65
IC=50mA, IB=5mA
Transition frequency
Delay time
0.2
IC=50mA, IB=5mA
IC=10mA, IB=1mA
300
V
0.3
V
0.85
V
0.95
V
300
MHz
4
pF
5
dB
35
ns
35
ns
VCC=3V, IC=10mA, IB1= IB2=1mA
200
ns
VCC=3V, IC=10mA, IB1= IB2=1mA
50
ns
Pulse test: pulse width≤300us,duty cycle≤2.0%
http://www.microdiode.com
Rev:2024A0
Page :1
MMDT3946
MAXIMUM RATINGS of TR2(NPN)3906(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-200
mA
PC
Collector Power Dissipation
200
mW
Thermal Resistance From Junction To Ambient
625
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS of TR2(NPN)3906 (Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-10µA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA, IB=0
-40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-30V, IE=0
Emitter cut-off current
IEBO
hFE(1)
VEB=-5V, IC=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)
VBE(sat)
Transition frequency
fT
Collector output capacitance
Cob
Noise figure
NF
-50
nA
-50
nA
60
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
80
100
60
30
300
IC=-10mA, IB=-1mA
-0.25
IC=-50mA, IB=-5mA
-0.40
V
-0.85
V
-0.95
V
-0.65
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
250
VCE=-20V, IC= -10mA, f= 100MHz
VCB=-5V, IE=0, f=1MHz
VCE=-5V, IC=-0.1mA, f=1KHz,
Rg=1KΩ,△f=200MHz
VCC=-3V, VBE(off)=-0.5V IC=10mA,
IB1=-1mA
V
MHz
4.5
pF
4.0
dB
35
ns
Delay time
td
Rise time
tr
VCC=-3V, VBE(off)=-0.5V IC=10mA,
IB1=-1mA
35
ns
Storage time
ts
VCC=-3V, IC=-10mA, IB1= IB2=-1mA
225
ns
Fall time
tf
VCC=-3V, IC=-10mA, IB1= IB2=-1mA
75
ns
Pulse test: pulse width≤300us,duty cycle≤2.0%
http://www.microdiode.com
Rev:2024A0
Page :2
MMDT3946
Typical Characteristics(3904)
http://www.microdiode.com
Rev:2024A0
Page :3
MMDT3946
Typical Characteristics(3906)
http://www.microdiode.com
Rev:2024A0
Page :4
MMDT3946
Outlitne Drawing
SOT-363 Package Outline Dimensions
Suggested Pad Layout
http://www.microdiode.com
Rev:2024A0
Page :5
