MDDG06R01L

MDDG06R01L 60V N-Channel Enhancement Mode MOSFET 1. Description This N-Channel MV MOSFET is produced using MDD Semiconductor's advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. 2. Features • Max RDS(on) = 1.5 mΩ at VGS = 10 V, ID = 30 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIS Tested • 100% dVDS Tested 3. Application • PWM Application • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter • Battery management System 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 330 A Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) IDM 1320 A Single Pulsed Avalanche Energy (Note 3) EAS 676 mJ Thermal Resistance (Junction to Case) RθJC 0.46 °C/W PD 330 W TJ -55~+150 °C Tstg -55~+150 °C Power Dissipation Junction Temperature Storage Temperature Note: 1)Calculated continuous current based on maximum allowable junction temperature. 2)Repetitive rating, pulse width limited by max. junction temperature. 3)EAS condition：TJ=25°C, VDD=40V, VGS=10V, L= 0.5mH, Rg= 25Ù, IAS=52A. Rev: 2025A0 MDDG06R01L 60V N-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 1 G Gate 9-11 D 2-8 S Simplified outline Equivalent Circuit Package MDD G06R01L Drain Source 6. TA=25°C unless otherwise specified Symbol Marking Parameter Condition TOLL Min Typ Max Unit VGS=0V, ID=250μA 60 — — V Forward VGS=20V — — 100 nA Reverse V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current VGS=-20V — — -100 nA IDSS Drain-Source Leakage Current VDS =60V, V GS=0V — 1 μA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 2 — RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=30A 7. Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V VDS =25V f=1MHZ VGS=10V VDS=32V ID=150A 8. Switching Characteristics Symbol td(on) tr td(off) tf Parameter Condition Turn on Delay Time VGS=10V VDD =30V ID=30A RG=3Ω Turn on Rise Time Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol Condition Parameter Condition 3 4 V — 1.2 1.5 mΩ Min Typ Max Unit — 7397 — pF — 3885 — pF — 203 — pF — 120 — nC — 37 — nC — 33 — nC Min Typ Max Unit — 26 — ns — 33 — ns — 50 — ns — 25 — ns Min Typ Max Unit Drain-Source Diode Forward Voltage IS=30A, VGS=0V — 0.8 1.2 V trr Body Diode Reverse Recovery Time — — ns Body Diode Reverse Recovery Charge — — 74 Qrr IF=30A di/dt=100A/μs VSD Craftsman-Made Consciention Chip Rev: 2025A0 2/5 123 nC www.microdiode.com MDDG06R01L 10.Test Circuits And Waveforms 60V N-Channel Enhancement Mode MOSFET Figure 1. Gate charge testcircuit & waveform Figure 2.Switching time testcircuit & waveforms Figure 3.Unclamped inductive switching (UIS)test circuit & waveforms Figure 4. Diode reverse recoverytest circuit& waveforms Craftsman-Made Consciention Chip Rev: 2025A0 3/5 www.microdiode.com MDDG06R01L 60V N-Channel Enhancement Mode MOSFET 11.Electrical Characteristics Diagrams 400 180 10V 5V 4.5V 4V 150 300 ID (A) ID (A) 120 VDS = 5.0V VGS=3.5V 90 60 VGS=3V 200 TJ = 125°C TJ = 25°C 100 30 VGS=2.5V 0 0.0 0.2 0.4 0.6 0.8 1.0 VDS (V) 1.2 1.4 1.6 1.8 0 2.0 Figure 1. Typ. output characteristics 4 3 VGS (V) 5 Figure 2. Typ. transfer characteristics 2.0 2.5 1.8 1.6 VGS = 10V 2.0 1.4 VGS=10V 1.2 ID = 20A Normalized RDS(ON) RDS(on) (mΩ) 2 1 1.5 1.0 0.8 1.0 0.6 0.4 0.5 0.2 0.0 20 40 60 ID (A) 80 0.0 120 100 Figure 3. On-Resistance vs. Drain Current -60 0 60 120 180 Temperature (℃) Figure 4. On-Resistance vs. Junction Temperature 100 4.0 VGS = 0V VGS = VDS 3.5 10 ID = 1.0mA IS(A) VGS(th) (V) 3.0 2.5 ID = 250A TJ = 125°C 1 TJ = -55°C 2.0 0.1 1.5 1.0 TJ = 25°C -60 0 60 120 180 0.01 0 Temperature (℃) Figure 5. Normalized Threshold Voltage vs. Junction Temperature Craftsman-Made Consciention Chip Rev: 2025A0 0.2 0.4 0.6 0.8 1 1.2 VSD (V) Figure 6. Forward characteristic of body diode 4/5 www.microdiode.com MDDG06R01L 60V N-Channel Enhancement Mode MOSFET 12. Outline Drawing TOLL Package Outline Dimensions b1 A A1 H D 2xD2 D4 L1 e1 e1 L2 e E2 c 6xb 2xb2 E E1 3xb3 Min Typ Max Symbol Min Typ Max A 2.25 2.30 2.35 E 9.85 9.90 9.95 A1 1.75 1.80 1.85 E1 8.00 8.10 8.20 b 0.65 0.70 0.75 E2 0.65 0.70 0.75 b1 9.75 9.80 9.85 H 11.60 11.70 11.80 b2 0.70 0.75 0.80 H1 6.95 BSC b3 1.15 1.20 1.25 H2 5.90 BSC c 0.45 0.50 0.55 K D 10.35 10.40 10.45 L 1.55 1.65 1.75 D1 11.00 11.10 11.20 L1 0.65 0.70 0.75 D2 3.25 3.30 3.35 L2 0.50 0.60 0.70 D4 4.50 4.55 4.60 L3 0.40 0.50 0.60 e 1.20 BSC Q e1 1.225 BSC R 3.10 REF 7.95 REF 3.00 3.10 3.20 D1 H2 H1 R Symbol L K L3 Q 13. 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Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2025A0 5/5 www.microdiode.com