ME5V0Z1BBC

ME5V0Z1BBC Bi-directional TVS Diode for ESD Protection 1. Protection Solution To Meet • IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) • IEC61000-4-4 (EFT) 40A (5/50ns) • IEC61000-4-5 (Lightning) 8A (8/20µs) 2. Features • Protects one bi-directional I/O line • Low clam ping voltage • Working voltage: 5V • Low leakage current • RoHS com pliant 3. Main Application • Cell phone handsets and accessories • Microprocessor based equipm ent • Personal digital assistants (PDA’s) • Notebooks, desktops, and servers • Portable instrum entation • Peripherals • Digital cam eras 4. Mechanical Characteristics • SOD-523 package • Molding com pound flam m ability rating: UL 94V-0 • Weight 0.5 m illigram s (approxim ate) • Lead finish: lead free • Marking code: 5B 5. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Value Unit VESD-Contact ±30 KV VESD-Air ±30 KV Peak Pilse Power(8/20us) Ppp 100 W Operating Tem p erature TOPT -55~+150 °C Storage Tem p erature Range Tstg -55~+150 °C ESD per IEC 61000-4-2 (Contact) ESD per IEC 61000-4-2 (Air) Rev:2025A2 Symbol ME5V0Z1BBC Bi-directional TVS Diode for ESD Protection 6. Pinning information Pin Symbol Description 1 A Anode A 2 Simplified outline Anode Equivalent Circuit 5B Marking Package 5B SOD-523 7.Electrical Characteristics(Tamb=25°C) Parameter Condition Symbols Min Typ VRWM Reverse Working Voltage Max Unit 5 V Breakdown Voltage VBR IT =1mA 6.0 — 8.5 V Reverse Leakage Current IR VRWM=±5V — — 0.1 uA Clamping Voltage VC Ipp=1A , tp=8/20us — — 8.5 V Ipp=8A , tp=8/20us — — 12 V Junction Capacitance CJ VR =0V ,f=1MHz — — 18 pF 8.Electrical Parameters Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current@VRWM IT Test Current VBR Breakdown Voltage @IT PPK Peak Power Dissipation C Capacitance @ VR =0 and f=1MHz Craftsman-Made Consciention Chip Rev:2025A2 2/5 www.microdiode.com ME5V0Z1BBC Bi-directional TVS Diode for ESD Protection 9.Typical Characterisitics Fig.2 Contact Discharge Current Waveform per 100 90 IEC61000-4-2 100 90 Front time: T1= 1.25 × T = 8μs Time to half-value: T2= 20μs Current (%) Peak puls e c urrent (% ) Fig.1 8/20us Waveform Per iec6100-4-5 50 T2 10 10 0 0 5 T 10 T1 20 25 tr = 0.7~1ns Time (ns) Fig.4 Capacitance VS Bias 20 Pulse waveform: tp = 8/20μs 18 18 16 14 14 Capacitance(pF) 16 12 10 8 6 12 10 8 6 4 4 2 2 0 t 60ns 30ns 30 Fig.3 ClampingVoltage VS Peak Pulse Current 20 V C - C la mp ing voltage (V) 15 Time (μs) 0 1 2 3 4 5 6 7 8 9 0 10 11 0 3 6 9 12 15 Bias Voltage(V) IPP - Peak pulse current (A) Fig.5 Non-Repetitive Peak Pulse Power vs Pulse Time Fig.6 Power Derating Curve 110 90 % of Rated Power IPP Peak Pulse Power - P pk (W) 100 1000 100 10 80 70 60 50 40 30 20 10 1 0 1 10 100 1000 0 25 50 75 100 125 150 Ambient Temperature - TA (℃) Pulse Duration - tp (μs) The curve above is for reference only. Craftsman-Made Consciention Chip Rev:2025A2 3/5 www.microdiode.com ME5V0Z1BBC Bi-directional TVS Diode for ESD Protection 10. Outline Drawing SOD-523 Package Outline Dimensions 6\mbRO A A1 b c D E E1 E2 L Κ LPHQVLRQV,Q0LOOLPHWHUV 0LQ 0D[ 0.510 0.770 0.500 0.770 0.250 0.400 0.080 0.150 0.700 1.000 1.100 1.300 1.500 1.700 0.250 0.150 0.000 0.070 0° 8° LPHQVLRQV,Q,QFKHV 0D[ 0LQ 0.020 0.031 0.020 0.031 0.010 0.016 0.003 0.006 0.028 0.040 0.043 0.051 0.059 0.067 0.006 0.010 0.000 0.003 0° 8° 11. Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 12.PACKAGE SPECIFICATIONS Package Reel Size Reel DIA. (mm) Q'TY/Reel (pcs) Box Size QTY/Box Carton Size Q'TY/Carton (mm) (pcs) (mm) (pcs) SOD-523 7' 178 5000 190*190*190 75,000 400*400*220 300,000 Craftsman-Made Consciention Chip Rev:2025A2 4/5 www.microdiode.com ME5V0Z1BBC Bi-directional TVS Diode for ESD Protection 13.Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev:2025A2 5/5 www.microdiode.com