74LVC1G11GV

74LVC1G11 Single 3-input AND gate Product datasheet, Rev1.0 Aug 08, 2024 1.General Description The 74LVC1G11 is a single 3-input AND gate. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V applications. Schmitt trigger action at all inputs makes the circuit tolerant of slower input rise and fall time. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. 2.Features and Benefits  Wide supply voltage range from 1.65 V to 5.5 V  High noise immunity  ±24 mA output drive (VCC = 3.0 V)  CMOS low power dissipation  Direct interface with TTL levels  Overvoltage tolerant inputs to 5.5 V  IOFF circuitry provides partial Power-down mode operation  Latch-up performance exceeds 100 mA  Complies with JEDEC standard: • JESD8-7 (1.65 V to 1.95 V) • JESD8-5 (2.3 V to 2.7 V) • JESD8C (2.7 V to 3.6 V) • JESD36 (4.5 V to 5.5 V)  ESD protection: • HBM ANSI/ESDA/JEDEC JS-001 Class 3B exceeds 8000 V • MM JESD22-A115C Class C exceeds 550 V • CDM ANSI/ESDA/JEDEC JS-002 Class C3 exceeds 2000 V  Multiple package options Rev. 1.0 – Aug 08, 2024 1 74LVC1G11 Single 3-input AND gate 3.Ordering Information Table 1. Ordering information Package Type number Name Description Quantity 74LVC1G11GV SOT23-6L SOT23 package, 6 pins 2.92 mm × 1.6 mm; 1.25 mm (Max) height 3000 74LVC1G11GW SOT363 SOT363 package, 6 pins 2.1 mm × 1.25 mm; 1.1 mm (Max) height 3000 74LVC1G11GS DFN1x1-6L DFN1×1 package, 6 pins 1 mm × 1 mm; 0.42 mm (Max) height 3000 74LVC1G11GM DFN1x1.45-6L DFN1.45×1 package, 6 pins 1.45 mm × 1 mm; 0.6 mm (Max) height 3000 4.Function Diagram Fig 1. Logic symbol Rev. 1.0 – Aug 08, 2024 Fig 2. IEC logic symbol Fig 3. Logic diagram 2 74LVC1G11 Single 3-input AND gate 5.Pinning Information 5.1. Pin map Fig 4. Top view pin configuration SOT23-6 and SOT363 Fig 5. Top view pin configuration DFN6L 5.2. Pin description Table 2. Pin description Symbol Pin Description A 1 Data input GND 2 Ground (0V) B 3 Data input Y 4 Data output VCC 5 Supply voltage C 6 Data input Rev. 1.0 – Aug 08, 2024 3 74LVC1G11 Single 3-input AND gate 6.Functional Description Table 3. Function table H = HIGH voltage level; L = LOW voltage level; X = don’t care. Input Output A B C Y H H H H L X X L X L X L X X L L 7.Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Table 4. Absolute Maximum Ratings In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND. Symbol Parameter VCC supply voltage IIK input clamping current VI input voltage IOK output clamping current VO output voltage IO output current ICC supply current IGND ground current Ptot total power dissipation Tstg storage temperature Conditions VI < 0 V Min Max Unit -0.5 6.5 V -50 [1] -0.5 6.5 V ±50 mA -0.5 VCC + 0.5 V -0.5 6.5 V ±50 mA 100 mA VO > VCC or VO < 0 V Active [1] Power-down [1] mode mode; VCC = 0 V mA VO = 0 V to VCC -100 Tamb = -40 °C to + 125 °C -65 mA 250 mW 150 °C [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. Rev. 1.0 – Aug 08, 2024 4 74LVC1G11 Single 3-input AND gate 8.Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. MDD does not recommend exceeding them or designing to Absolute Maximum Ratings. Table 5. Recommended Operating Conditions Symbol Parameter VCC supply voltage VI input voltage VO output voltage Tamb ambient temperature Δt/ΔV Input transition rise and fall rate Rev. 1.0 – Aug 08, 2024 Conditions Min Typ Max Unit 1.65 5.5 V 0 5.5 V Active mode 0 VCC V Power-down mode; VCC = 0 V 0 5.5 V -40 125 °C VCC = 1.65 V to 2.7 V 20 ns/V VCC = 2.7 V to 5.5 V 10 ns/V 5 74LVC1G11 Single 3-input AND gate 9.Static Characteristics Table 6. Static characteristics At recommended operating conditions. Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions VCC = 1.65 V to 1.95 V VIH HIGH-level input VCC = 2.3 V to 2.7 V voltage VCC = 2.7 V to 3.6 V VCC = 4.5 V to 5.5 V -40 °C to +85 °C Min Typ[1] LOW-level input voltage Max Min Max Unit 0.65VCC 0.65VCC V 1.7 1.7 V 2.0 2.0 V 0.7VCC 0.7VCC V VCC = 1.65 V to 1.95 V VIL -40 °C to +125 °C 0.35VCC 0.35VCC V VCC = 2.3 V to 2.7 V 0.7 0.7 V VCC = 2.7 V to 3.6 V 0.8 0.8 V VCC = 4.5 V to 5.5 V 0.3VCC 0.3VCC V VI = VIH or VIL IO = -100μA; VCC = 1.65 V to 5.5 V VOH HIGH-level output voltage VCC - 0.1 VCC - 0.1 V IO = -4 mA; VCC = 1.65 V 1.2 1.54 0.95 V IO = -8 mA; VCC = 2.3 V 1.9 2.15 1.7 V IO = -12 mA; VCC = 2.7 V 2.2 2.50 1.9 V IO = -24 mA; VCC = 3.0 V 2.3 2.62 2.0 V IO = -32 mA; VCC = 4.5 V 3.8 4.11 3.4 V VI = VIH or VIL IO = 100μA; VCC = 1.65 V to 5.5 V VOL II LOW-level output voltage Input leakage current Rev. 1.0 – Aug 08, 2024 0.10 0.10 V IO = 4 mA; VCC = 1.65 V 0.07 0.45 0.70 V IO = 8 mA; VCC = 2.3 V 0.12 0.30 0.45 V IO = 12 mA; VCC = 2.7 V 0.17 0.40 0.60 V IO = 24 mA; VCC = 3.0 V 0.33 0.55 0.80 V IO = 32 mA; VCC = 4.5 V 0.39 0.55 0.80 V VI = 5.5 V or GND ; VCC = 0 V to 5.5 V ±0.1 ±1 ±1 μA 6 74LVC1G11 Single 3-input AND gate IOFF power-off leakage current VCC = 0V ; VI or VO = 5.5 V ICC supply current VI = 5.5V or GND ; IO = 0A ; VCC = 1.65V to 5.5V ΔICC CI ±0.1 ±2 ±2 μA 0.1 4 4 μA additional supply per pin ; VCC = 2.3V to 5.5V ; current VI = VCC -0.6V ; IO = 0A 5 500 500 μA input capacitance 5 VCC = 3.3V ; VI = GND to VCC pF [1]All typical values are measured at VCC = 3.3V and Tamb = 25℃. 10. Dynamic Characteristics Table 7. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Fig. 8. Symbol Parameter CPD propagation delay power dissipation capacitance -40 °C to +125 °C Unit Min Typ[1] Max Min Max VCC = 1.65 V to 1.95 V 3.4 9.4 15.9 3.4 16.3 ns VCC = 2.3 V to 2.7 V 2.4 5.0 8.6 2.4 9.1 ns VCC = 3.0 V to 3.6 V 1.8 3.9 6.0 1.8 6.3 ns VCC = 4.5 V to 5.5 V 1.4 2.6 3.6 1.4 3.8 ns A to Y; see Fig. 7 tpd -40 °C to +85 °C Conditions [2] VI = GND to VCC ; VCC = 3.3V [3] 24 pF [1] Typical values are measured at Tamb = 25 °C and VCC = 1.8 V, 2.5 V, 3.3 V and 5.0 V respectively. [2] tpd is the same as tPLH and tPHL. [3] CPD is used to determine the dynamic power dissipation (PD in μW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of outputs. Rev. 1.0 – Aug 08, 2024 7 74LVC1G11 Single 3-input AND gate 10.1. Waveforms and test circuit Measurement points are given in Table 8. VOL and VOH are typical output voltage levels that occur with the output load. Fig 6. The input A, B to output Y propagation delays Table 8. Measurement points Supply voltage Input Output VCC VM VM 1.65 V to 1.95 V 0.5VCC 0.5VCC 2.3 V to 2.7 V 0.5VCC 0.5VCC 3.0 V to 3.6 V 1.5 V 1.5 V 4.5 V to 5.5 V 0.5VCC 0.5VCC Rev. 1.0 – Aug 08, 2024 8 74LVC1G11 Single 3-input AND gate Test data is given in Table 9. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 7. Test circuit for measuring switching times Table 9. Test data Supply voltage Input VCC VI tr = tf CL RL tPLH, tPHL 1.65 V to 1.95 V VCC ≤ 2.0 ns 30 pF 1 kΩ open 2.3 V to 2.7 V VCC ≤ 2.0 ns 30 pF 500 Ω open 3.0 V to 3.6 V 3V ≤ 2.5 ns 50 pF 500 Ω open 4.5 V to 5.5 V VCC ≤ 2.5 ns 50 pF 500 Ω open Rev. 1.0 – Aug 08, 2024 Load VEXT 9 74LVC1G11 Single 3-input AND gate 11. Package Outline SOT23-6L Rev. 1.0 – Aug 08, 2024 10 74LVC1G11 Single 3-input AND gate SOT363 Rev. 1.0 – Aug 08, 2024 11 74LVC1G11 Single 3-input AND gate DFN1x1-6L Rev. 1.0 – Aug 08, 2024 12 74LVC1G11 Single 3-input AND gate DFN1x1.45-6L Rev. 1.0 – Aug 08, 2024 13 74LVC1G11 Single 3-input AND gate 12. Abbreviations Table 10. Abbreviations Acronym Description CMOS Complementary Metal-Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 13. Revision History Table 11. Revision history Document ID Release Date Data sheet status 74LVC1G11 Rev1.0 Oct 30, 2023 Product datasheet Rev. 1.0 – Aug 08, 2024 Change notice Supersedes 14