MDD50P02G

MDD50P02G 20V P-Channel Enhancement Mode MOSFET 1. Description This P-Channel MOSFET is produced using MDD Semiconductor's advanced Power Trench process technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. 2. Features • Max RDS(on) = 8.5 mΩ at VGS = -4.5 V, ID =-15 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIS Tested • 100% dVDS Tested 3. Application • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • DC-DC converters 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V ID -50 A Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) IDM -200 A Single Pulsed Avalanche Energy (Note 3) EAS 30.25 mJ Thermal Resistance, steady-state RθJA 45 °C/W TJ -55~+150 °C Tstg -55~+150 °C Junction Temperature Storage Temperature Note: 1)Calculated continuous current based on maximum allowable junction temperature. 2)Repetitive rating, pulse width limited by max. junction temperature. 3)EAS condition：TJ=25°C, VDD=-10V, L= 0.5mH, Rg= 25Ω, ID=-11A Rev: 2025A0 MDD50P02G 20V P-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 4 G Gate 5-8 D 1-3 S Simplified outline Equivalent Circuit Package MDD Drain 50P02G PDFN5*6-8L XXY: Date code Source 6. TA=25°C unless otherwise specified Symbol Marking Parameter Condition Min Typ Max Unit -20 — — V V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current VGS=±12V — — ±100 nA IDSS Drain-Source Leakage Current VDS =-20V, V GS=0V — — -1 μA Gate Threshold Voltage VDS=VGS, ID=-250μA -0.45 -0.6 -0.95 V VGS=-4.5V, I D=-15A — 5.8 8.5 mΩ 7.8 10.5 mΩ VGS(TH) RDS(ON) Drain-Source On-State Resistance VGS=0V, ID=-250μA VGS=-2.5V, I D=-10A 7. Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V VDS =-10V f=1.0MHz VGS=-4V VDS=-10V ID=-15A 8. Switching Characteristics Symbol td(on) tr td(off) tf Parameter Condition Turn on Delay Time VGS =-10V VDD =-20V ID=-10A RG=3Ω Turn on Rise Time Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol Condition Parameter — Min Typ Max Unit — 2859 — pF — — 385 338 — — pF pF — 50 — nC — 8 — nC — 16 — nC Min Typ Max Unit — — 7 ns 105 — — ns — 135 — ns — ns Typ Max Unit — Condition 175 Drain-Source Diode Forward Voltage IS=-20A, VGS=0V — -0.8 -1.2 V trr Body Diode Reverse Recovery Time — 19 — ns Qrr Body Diode Reverse Recovery Charge IF=-10A — 11 — nC VSD Craftsman-Made Consciention Chip Rev: 2025A0 di/dt=-100A/μs 2/5 www.microdiode.com MDD50P02G 20V P-Channel Enhancement Mode MOSFET 10.Electrical Characteristics Diagrams -ID (A) 4.5V 70 2.5V 70 2V 60 1.8V 50 40 30 1.5V 20 10 -VDS (V) 0 0 -ID (A) 80 -ID-Drain Current (A) -ID-Drain Current (A) 80 1 2 1V 60 50 125℃ 40 25℃ 30 20 10 3 4 0 5 -VGS (V) 0 0.5 RD S(ON) (mΩ) 5 12 10 V GS =-2.5V 6 V GS =-4.5V 4 2 -ID (A) 0 0 3 6 9 12 15 4 -VGS (V) V DS =-10V ID=-15A 3 2 1 Q g(nC) 0 0 18 10 -ID-Drain Current (A) -Is-Reverse Drain Current (A) RDS(on)-Drain to Source Resistance Normalized 10 1.5 1.0 0 50 50 60 100 150 Figure 5. Normalized on Resistance vs. Junction Temperature Craftsman-Made Consciention Chip -IS (A) 25℃ 1 0.0 200 Tj-Junction Temperature (℃) Rev: 2025A0 40 125℃ Tj (℃) -50 30 Figure 4. Gate Charge Characteristics RDS (on)(mΩ) 0 -100 20 Qg-Total Gate Charge (nC) Figure 3. On-Resistance vs. Drain Current 2.5 2.0 Figure 2. Typ. transfer characteristics -VGS-Gate to Source Voltage (V) RDS(on) -Drain to Source resistance (mΩ) Figure 1. Typ. output characteristics 8 1.5 -VGS-Gate to Source Voltage (V) -VDS-Drain to Source Voltage (V) 14 1.0 0.2 0.4 V SD (V) 0.6 0.8 1.0 1.2 1.4 -Vsd- Source to Drain Voltage (V) Figure 6. Forward characteristic of body diode 3/5 www.microdiode.com MDD50P02G 20V P-Channel Enhancement Mode MOSFET 11.Test Circuits And Waveforms Figure 1. Gate charge testcircuit & waveform Figure 2.Switching time testcircuit & waveforms Figure 3.Unclamped inductive switching (UIS)test circuit & waveforms Figure 4. Diode reverse recoverytest circuit& waveforms Craftsman-Made Consciention Chip Rev: 2025A0 4/5 www.microdiode.com MDD50P02G 20V P-Channel Enhancement Mode MOSFET 12. Outline Drawing PDFN5*6-8L Package Outline Dimensions 13. Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2025A0 5/5 www.microdiode.com