MDD90N02G

MDD90N02G 20V N-Channel Enhancement Mode MOSFET 1. Description This N-Channel MOSFET is produced using MDD Semiconductor's advanced Power Trench process technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. 2. Features • Max RDS(on) = 3.6 mΩ at VGS = 4.5 V, ID =30 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIS Tested • 100% dVDS Tested 3. Application • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • DC-DC converters 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 90 A Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) IDM 360 A Single Pulsed Avalanche Energy (Note 3) EAS 126.6 Thermal Resistance, steady-state RθJA 33 mJ °C/W TJ -55~+150 °C Tstg -55~+150 °C Junction Temperature Storage Temperature Note: 1)Calculated continuous current based on maximum allowable junction temperature. 2)Repetitive rating, pulse width limited by max. junction temperature. 3)EAS condition：TJ=25°C, VDD=20V, L= 0.5mH, Rg = 25Ω, ID=22.5A Rev: 2025A0 MDD90N02G 20V N-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 4 G Gate 5-8 D 1-3 S Simplified outline Equivalent Circuit Package MDD Drain 90N02G PDFN5*6-8L XXY: Date code Source 6. TA=25°C unless otherwise specified Symbol Marking Min Typ Max Unit VGS=0V, ID=250μA 20 — — V Parameter Condition V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current VGS=±12V — — ±100 nA IDSS Drain-Source Leakage Current VDS =20V, V GS =0V — — 1 μA Gate Threshold Voltage VDS=VGS, ID=250μA 0.45 — 0.95 V VGS=4.5V, I D =30A — 2.8 3.6 mΩ 3.9 4.9 mΩ VGS(TH) RDS(ON) Drain-Source On-State Resistance VGS=2.5V, I D= 20A 7. Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V VDS =10V f=1.0MHz VGS=0-8V VDS =10V ID=30A 8. Switching Characteristics Symbol td(on) tr td(off) tf Parameter Condition Turn on Delay Time VGS =10V VDD =10V ID=30A RG=3Ω Turn on Rise Time Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol Condition Parameter — Min Typ Max Unit — 3845 — pF — — 551 484 — — pF pF — 65 — nC — 6 — nC — 16 — nC Min Typ Max Unit — — 8 ns 19 — — ns — 73 — ns — ns Typ Max Unit — Condition 80 Drain-Source Diode Forward Voltage IS=30A, VGS =0V — 0.8 1.2 V trr Body Diode Reverse Recovery Time — ns Body Diode Reverse Recovery Charge 16 — Qrr IF=20A — 5.6 — nC VSD Craftsman-Made Consciention Chip Rev: 2025A0 di/dt=100A/μs 2/5 www.microdiode.com MDD90N02G 20V N-Channel Enhancement Mode MOSFET 10.Electrical Characteristics Diagrams 150 20 VDS = 5V VGS = 4.5V VGS = 4.0V VGS = 2.5V 120 16 TJ = 125°C 90 TJ = -55°C ID(A) 12 ID(A) VGS = 1.8V TJ = 25°C 60 8 VGS = 1.5V 30 4 VGS = 1.3V 0 0 0 1 2 3 4 0 5 0.5 1 1.5 2 2.5 3 VGS(V) VDS(V) Figure 1. Typ. output characteristics Figure 2. Typ. transfer characteristics 5 8 VDD = 8V ID = 30A VGS = 2.5V 6 VGS(V) RDS(ON)(mΩ) 4 3 4 VGS =4.5V 2 1 2 0 10 20 30 40 0 50 0 10 20 30 ID(A) 40 50 60 70 Qg(nC) Figure 3. On-Resistance vs. Drain Current Figure 4. Gate Charge Characteristics 100 2.2 VGS = 0V 2 VGS = 4.5V ID = 30A 10 TJ = 125°C 1.6 IS(A) Normalized RDS(ON) 1.8 1.4 1.2 1 TJ = -55°C 1 TJ = 25°C 0.1 0.8 0.6 0.4 -80 -40 0 40 80 120 160 200 0.01 TJ(℃) Junction Temperature Figure 5. Normalized on Resistance vs. Junction Temperature Craftsman-Made Consciention Chip Rev: 2025A0 0 0.2 0.4 0.6 0.8 1 1.2 VSD(V) Figure 6. Forward characteristic of body diode 3/5 www.microdiode.com MDD90N02G 20V N-Channel Enhancement Mode MOSFET 11.Test Circuits And Waveforms Figure 1. Gate charge testcircuit & waveform Figure 2.Switching time testcircuit & waveforms Figure 3.Unclamped inductive switching (UIS)test circuit & waveforms Figure 4. Diode reverse recoverytest circuit& waveforms Craftsman-Made Consciention Chip Rev: 2025A0 4/5 www.microdiode.com MDD90N02G 20V N-Channel Enhancement Mode MOSFET 12. Outline Drawing PDFN5*6-8L Package Outline Dimensions 13. 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Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2025A0 5/5 www.microdiode.com