SD103AW-E

SD103AW-E Reverse Voltage -40 Volts Forward Current - 0.35 Ampere 1. Description Schottky Diodes 2. Features • Fast switching speed • Guard ring construction for transient protection • Negligible reverse recovery time • Low reverse capacitance 3. Application • Low Voltage Rectification • High-Efficiency DC-DC Conversion • Switch Mode Power Supply • Inverse Polarity Protection 4. Mechanical Data • Case : JEDEC SOD-123 molded plastic body • Terminals : Plated leads solderable per MILSTD-750, Method 2026 • Polarity : Polarity symbols marked on case • Weight : 0.0007 ounce, 0.02 grams • Marking: S4 5. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Symbol Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM DC Blocking voltage VDC RMS Reverse voltage VR(RMS) Value Unit 40 V 28 V 350 mA Forward continuous current IFM Repetitive peak forward current at ≤ 1.0s IFRM Power dissipation PD 400 mW Thermal resistance junction to ambient RθJA Tstg 300 °C/W -55~+150 °C Storage temperature Rev:2025A0 1.5 A SD103AW-E Reverse Voltage -40 Volts Forward Current - 0.35 Ampere 6. Pinning information Pin Symbol Description 1 - Cathode 2 + Anode Simplified outline Equivalent Circuit (2) (1) Marking Package S4 SOD-123 (2)Anode (1)Cathode 7. Characteristics(TA=25°C unless otherwise noted) Parameter Condition Symbols Reverse breakdown voltage Reverse Fowrard voltage Reverse current Min Typ Max — Unit V(BR)R IR=100uA 40 — VF1 IF=20mA — — VF2 IF=200mA — — VR=30V — — 10 uA VR=0V , f=1.0MHz — 50 — pF — 10 — ns IRM Capacitance between terminals CT Reverse recovery time trr IF=IR=200mA Irr=0.1 ×IR , RL=100Ω V 0.4 0.61 V V 8.Typical Characterisitics 1000 1000 Pulsed (uA) o 100 10 T= o a 25 C T= a 1 00 FORWARD CURRENT o C REVERSE CURRENT IR IF (mA) Pulsed 1 0.1 0 100 200 300 400 FORWARD VOLTAGE 500 VF 600 700 o Ta=25 C 1 0 5 10 15 20 REVERSE VOLTAGE Figure 1. Forward Characteristics Rev:2025A0 10 0.1 800 (mV) Craftsman-Made Consciention Chip Ta=100 C 100 25 30 VR 35 40 (V) Figure 2. Reverse Characteristics 2/4 www.microdiode.com SD103AW-E Reverse Voltage -40 Volts Forward Current - 0.35 Ampere 100 500 o 400 PD (mW) f=1MHz POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25 C 10 1 0 5 10 15 REVERSE VOLTAGE VR 300 200 100 0 20 0 25 50 75 AMBIENT TEMPERATURE (V) 100 Ta 125 o ( C) Figure 4. Power Derating Curve Figure 3. Capacitance Characteristics The curve above is for reference only. 10. Packing information unit:mm P0 P1 Item d Symbol Tolerance A B C d D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 SOD-123 E F B A W P D2 T D1 C W1 D Carrier width Carrier length Carrier depth Sprocket hole 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width 2.1 4.0 1.60 1.55 178.00 50.0 13.00 1.75 3.50 4.00 4.00 2.00 0.25 8.15 10.5 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Craftsman-Made Consciention Chip Rev:2025A0 3/4 www.microdiode.com SD103AW-E Reverse Voltage -40 Volts Forward Current - 0.35 Ampere 11. Outline Drawing SOD-123 Package Outline Dimensions 0.028(0.70) 0.071(1.80) 0.018(0.45) 0.055(1.40) 0.008(0.20)max. Cathode bar 0.110(2.80) 0.098(2.50) 0.154 (3.90) 0° to 0.006 (0.15) 0.026 (0.65) 0.014 (0.35) 0.0019 (0.05) 9° 0.018 (0.45) 0.0087 (0.22) 0.037(0.95) 0.008 (0.2 ) 0.049 (1.25) 0.138 (3.50) 12. Suggested Pad Layout Symbol A Unit (mm) Unit (inch) 0.047 B 1.2 1.2 C 3.2 0.126 D 2.0 0.079 E 4.4 0.173 0.047 13.Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights or Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev:2025A0 4/4 www.microdiode.com