MDDG06R10Q

MDDG06R10Q 60V N-Channel Enhancement Mode MOSFET 1. Description This N-Channel MOSFET is produced using MDD Semiconductor's advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. 2. Features • Max RDS(on) = 10 mΩ at VGS = 10 V, ID = 20 A • Extremely Low Reverse Recovery Charge, Qrr • 100% UIS Tested • RoHS Compliant 3. Application • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter • DC to DC converters 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 50 A Pulsed Drain Current (Note 2) IDM 200 A Single Pulsed Avalanche Energy (Note 3) EAS 39 mJ Thermal Resistance, steady-state RθJA 45 °C/W PD 35 W TJ -55~+150 °C Tstg -55~+150 °C Parameter Continuous Drain Current (Note 1) Power Dissipation Junction Temperature Storage Temperature Note: 1)Calculated continuous current based on maximum allowable junction temperature. 2)Repetitive rating, pulse width limited by max. junction temperature. 3)EAS condition：TJ=25°C, VDD=30V, VGS=10V, L= 0.5mH, Rg= 25Ω, IAS=12.5A. Rev: 2025A1 MDDG06R10Q 60V N-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 4 G Gate 5-8 D Drain 1-3 S Simplified outline Equivalent Circuit Source 6. TA=25°C unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS VGS(TH) RDS(ON) Condition Typ Max — Forward VGS=20V — — 100 nA Reverse VGS=-20V — — -100 nA 1 μA V VDS=VGS, ID=250μA 1.0 1.7 2.5 V VGS=10V, ID=20A — 8 10 mΩ VGS=4.5V, ID=20A — 10 15 mΩ Min Typ Max Unit VGS=0V VDS =20V f=1MHz — 1020 — pF VGS=4.5V VDS=30V ID=10A — Drain-Source On-State Resistance Parameter Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 8. Switching Characteristics Symbol Parameter Condition Turn on Delay Time VGS=4.5V VDD =30V ID=30A RG=3Ω Turn on Rise Time Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol Condition Parameter Condition Drain-Source Diode Forward Voltage IS=10A, VGS=0V trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=10A di/dt=100A/μs Craftsman-Made Consciention Chip Rev: 2025A1 2/5 — — — — — Unit 60 Gate Threshold Voltage Coss VSD Min VDS =60V, V GS=0V Input Capacitance tf PDFN3*3-8L Drain-Source Leakage Current Ciss td(off) MDD G06R10Q — Symbol tr Package VGS=0V, ID=250μA 7. Dynamic Electrical Characteristics td(on) Marking 290 5.5 70 10 — pF — pF — nC — nC — nC — 13 Min Typ Max Unit — 10 — ns — 25 — ns — ns — ns Typ Max Unit 1.0 V 20 — — ns 13 — nC — 18 — 12 Min — — — www.microdiode.com MDDG06R10Q 60V N-Channel Enhancement Mode MOSFET 10.Test Circuits And Waveforms Figure 1. Gate charge testcircuit & waveform Figure 2.Switching time testcircuit & waveforms Figure 3.Unclamped inductive switching (UIS)test circuit & waveforms Figure 4. Diode reverse recoverytest circuit& waveforms Craftsman-Made Consciention Chip Rev: 2025A1 3/5 www.microdiode.com MDDG06R10Q 60V N-Channel Enhancement Mode MOSFET 11.Electrical Characteristics Diagrams 80 VGS = 10V VGS = 4.5V 64 20 VGS = 3.5V 16 VGS = 4.0V 48 TJ = 125°C 12 ID(A) ID (A) VGS = 3.3V VGS = 3.0V 32 VGS = 2.7V 16 0 0.5 5 1 .5 TJ = -55°C 8 TJ = 25°C 4 VGS = 2.5V 0 VDS = 5V 0 2 2.5 0 0.5 1 1.5 2 2.5 Figure 1. Typ. output characteristics 4 4.5 5 2.5 VGS = 4.5V VGS = 10V ID = 20A 2 Normalized RDS(ON) 10 RDS(ON) (m) 3.5 Figure 2. Typ. transfer characteristics 12 8 VGS = 10V 6 1.5 1 VGS = 4.5V ID = 15A 0.5 4 2 3 VGS(V) VDS (V) 0 30 60 ID (A) 90 120 0 150 -50 50 0 100 150 Temperature (C) Figure 4. RDS(ON) vs. Junction Temperature Figure 3. On-Resistance vs. Drain Current 100 1.20 1.15 10 TJ = 125°C 1.10 IS(A) Normalized V(BR)DSS VGS = 0V ID = 1mA 1.05 1 TJ = -55°C 1.00 0.1 0.95 0.90 -80 -40 0 40 80 120 160 0.01 200 TJ(℃) Junction Temperature Figure 5. Normalized Breakdown Voltage vs. Junction Temperature Craftsman-Made Consciention Chip Rev: 2025A1 TJ = 25°C 0 0.2 0.4 0.6 0.8 1 1.2 VSD(V) Figure 6. Forward characteristic of body diode 4/5 www.microdiode.com MDDG06R10Q 60V N-Channel Enhancement Mode MOSFET 12. Outline Drawing PDFN3*3-8L Package Outline Dimensions is the key control dimension 13. Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2025A1 5/5 www.microdiode.com