A1300

A1300 10V 2A PNP High-Frequency Low Vce(sat) Transistor 1. Description • SOT-23-3L High-frequency low VCE(sat) PNP Transistors 2. Features • High DC Current Gain and Excellent Frequency Performance; • Low Saturation Voltage 3. Application • Strobo flash, medium power amplifier applications. 4.MAxIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -10 Emitter-Base Voltage VEBO -6 V Collector Current IC -2 A Collector Power Dissipation PC 750 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55～+150 ℃ Marking Package J11. SOT-23-3 5. Pinning information Pin Symbol Description 1 2 B BASE E EMITTER 3 C COLLECTOR Rev:2024A0 Simplified outline Equivalent Circuit V C B E A1300 10V 2A PNP High-Frequency Low Vce(sat) Transistor 6. Electrical Characteristics (Ta=25℃unless otherwise specified) Parameter Symbol Condition Min Typ Max Unit V V(BR)CBO V(BR)CEO Collector-base breakdown voltage IC=-1mA, IE=0 -20 — Collector-emitter breakdown voltage — IC=-10mA, IB=0 -10 V(BR)EBO Emitter-base breakdown voltage — — IE=-1mA, IC=0 -6 — — ICBO Collector cut-off current VCB=-20V, IE=0 — -0.1 uA ICEO Collector cut-off current VCE=-10V, IB=0 — — -0.1 IEBO — uA Emitter cut-off current VEB=-6V, IC=0 — — -0.1 uA 600 — V V VCE=-1V, IC=-500mA 140 — VCE=-1V, IC=-4A 60 120 Collector-emitter saturation voltage IC=-2A, IB=-50mA — -0.2 -0.5 V VBE Base-emitter voltage IC=-2A, VCE=-1V — -0.83 -1.5 V fT Transition frequency VCE=-1V,IC=-0.5A 140 — — MHz Cob Capacitance VCB=-10V,IE=0, f=1MHz — 50 — pF hFE(1) DC current gain hFE(2) VCE(sat) Craftsman-Made Consciention Chip Rev:2024A0 2/4 — www.microdiode.com A1300 10V 2A PNP High-Frequency Low Vce(sat) Transistor 7 . Outline Drawing SOT-23-3 Package Outline Dimensions 8. Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. Craftsman-Made Consciention Chip Rev:2024A0 3/4 www.microdiode.com A1300 10V 2A PNP High-Frequency Low Vce(sat) Transistor 9.Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev:2024A0 4/4 www.microdiode.com