BSS138W

BSS138W 60V N-Channel Enhancement Mode MOSFET 1. Description This 60V N-channel MOSFET is based on MDD's unique device design to achieve low RDson and fast switching and good ESD rating performance. 2. Features • VDS=60V, ID=0.3A, RDS(on)typ=1.8Ω @ VGS=10V • Exceptional on-resistance and maximum DC current capability • JESD22-A114-B ESD rating of class 2 per human body model. 3. Application • Load Switch for Portable Devices • Battery Powered System • DC-DC converter • LCD Display inverter 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 0.3 A Pulsed Drain Current (Note 1) IDM 1.2 A Thermal Resistance, Junction-Ambient (Note 2) RθJA 500 °C/W Power Dissipation PD 0.3 W Junction Temperature TJ -55~+150 °C Storage Temperature Tstg -55~+150 °C Continuous Drain Current (Note 1) • Stresses exceeding Maximum Ratings may damage the device. • Maximum Ratings are stress ratings only. • Functional operation above the Recommended Operating Conditions is not implied. • Extended exposure to stresses above the recommended Operating Conditions may affect device reliability Notes: 1.Pulse width limited by maximum allowable junction temperature 2.Surface Mounted on FR-4 Board Rev: 2025A0 BSS138W 60V N-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Simplified outline Equivalent Circuit 1 Package BK SOT-323 2 6. TA=25°C unless otherwise specified Symbol Marking 3 Parameter Condition Min Typ Max Unit VGS=0V, ID=250μA 60 — — V Forward VGS=20V — — 10 μA Reverse VGS=-20V — — -10 μA V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VDS=60V, VGS=0V — — 1 μA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 0.7 1.0 1.5 V RDS(ON) Drain-Source On-State Resistance VGS=10V, I D=0.3A — 1.8 2.2 Ω VGS=4.5V, I D =0.2A — 2.0 3.0 Ω Min Typ Max Unit — 25 — pF — 7 — pF — 3 — pF — 1.8 — nC — 0.5 — nC — 0.3 — nC Min Typ Max Unit — 4 — ns — 16 — ns — 7 — ns — 23 — ns Min Typ Max Unit 7. Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V VDS=30V f=1.0MHz VGS=4.5V VDS=30V ID=0.3A 8. Switching Characteristics Symbol td(on) Parameter Condition Turn on Delay Time VGS=10V VDS =30V ID=0.3A RG=2.3Ω Turn on Rise Time tr td(off) tf Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol Condition Parameter Condition VSD Drain-Source Diode Forward Voltage IS=0.3A, VGS =0V — 0.8 1.2 V ISD Source drain current(Body Diode) TA=25°C — — 0.3 A Craftsman-Made Consciention Chip Rev: 2025A0 2/5 www.microdiode.com BSS138W 60V N-Channel Enhancement Mode MOSFET 10.Test Circuits And Waveforms Figure 1. Gate Charge test Circuit Figure 2. Switchingtime testcircuit & waveforms Figure 3. UnclampedInductiveSwitchingTestCircuit&Waveform Figure4 :Diode Recovery Test Circuit & Waveform The curve above is for reference only. Craftsman-Made Consciention Chip Rev: 2025A0 3/5 www.microdiode.com BSS138W 60V N-Channel Enhancement Mode MOSFET 11.Electrical Characteristics Diagrams 2 Tj=25℃ VGS= 10V 9V 8V 1.5 7V 6V 5V 4.5V VDS=5V 25℃ ID-Drain Current (A) ID-Drain Current (A) 2 4V 1 3.5V 0.5 3V 1.5 150℃ 1 0.5 2.5V 0 0 0 1 2 3 VDS-Drain to Source Voltage (V) 4 2 1 5 Tj=25℃ Is-Reverse Drain Current (A) RDS(on) -Drain to Source resistance (Ω) 5 10 4 3 VGS=4.5V 2 VGS=10V 1 0 0.5 1 1 0.1 1.5 25℃ 150℃ 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Vsd- Source to Drain Voltage (V) ID-Drain Current (A) Figure 3. RDS(on) VS Drain Current Figure 4. Forward characteristics of reverse diode 2.5 RDS(on)-Drain to Source Resistance Normalized 4 RDS(on)-Drain to Source resistance (Ω) 4 Figure 2. Transfer Characteristics Figure 1. Output Characteristics 0 3 Vgs-Gate to Source Voltage (V) 3 Vgs=10V ID=0.38A 2 1.5 2 1 ID=0.3A Tj=25℃ 2 1 0.5 4 6 8 10 Figure 5. On-Resistance vs Gate to Source Voltage Craftsman-Made Consciention Chip -75 -25 25 75 125 175 Tj-Junction Temperature (℃) VGS-Gate to Source Voltage (V) Figure 6. Normalized On-Resistance 4/5 www.microdiode.com BSS138W 60V N-Channel Enhancement Mode MOSFET 12. Outline Drawing SOT-323 Package Outline Dimensions 13. Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2025A0 5/5 www.microdiode.com