MDD2002KT

MDD2002KT 20V N-Channel Enhancement Mode MOSFET 1. Description This 20V N-channel MOSFET is based on MDD's unique device design to achieve low RDson and fast switching and good ESD rating performance. 2. Features • VDS=20V, ID=0.75A, RDS(on)typ=250mΩ @ VGS=4.5V • Exceptional on-resistance and maximum DC current capability • JESD22-A114-B ESD rating of class 2 per human body model. 3. Application • Load Switch for Portable Devices • Battery Powered System • DC-DC converter • LCD Display inverter 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V ID 0.75 A Pulsed Drain Current (Note 1) IDM 3 A Thermal Resistance, Junction-Ambient (Note 2) RθJA 833 °C/W Power Dissipation PD 0.15 W Junction Temperature TJ -55~+150 °C Storage Temperature Tstg -55~+150 °C Continuous Drain Current (Note 1) • Stresses exceeding Maximum Ratings may damage the device. • Maximum Ratings are stress ratings only. • Functional operation above the Recommended Operating Conditions is not implied. • Extended exposure to stresses above the recommended Operating Conditions may affect device reliability Notes: 1.Pulse width limited by maximum allowable junction temperature 2.Surface Mounted on FR-4 Board Rev: 2025A0 MDD2002KT 20V N-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Simplified outline Equivalent Circuit 1 Package 02K SOT-523 2 6. TA=25°C unless otherwise specified Symbol Marking 3 Parameter Condition Min Typ Max Unit VGS=0V, ID=250μA 20 — — V Forward VGS=10V — — 10 μA Reverse VGS=-10V — — -10 μA V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VDS=20V, V GS=0V — — 1 μA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 0.3 0.65 1 V RDS(ON) Drain-Source On-State Resistance VGS=4.5V, I D =0.5A — 250 380 mΩ VGS=2.5V, I D =0.3A — 350 450 mΩ Condition Min Typ Max Unit — 79 — pF — 13 — pF — 9 — pF — 5 — nC — 0.8 — nC — 1.2 — nC Min Typ Max Unit — 6.7 — ns — 4.8 — ns — 17.3 — ns — 7.4 — ns Min Typ Max Unit 7. Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V VDS=10V f=1.0MHz VGS=4.5V VDS=10V ID=0.3A 8. Switching Characteristics Symbol td(on) Parameter Condition Turn on Delay Time VGS=4.5V VDS =10V ID=0.5A RG=3Ω Turn on Rise Time tr td(off) tf Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol Parameter Condition VSD Drain-Source Diode Forward Voltage IS=0.75A, VGS=0V — 0.8 1.2 V ISD Source drain current(Body Diode) TA=25°C — — 0.75 A Craftsman-Made Consciention Chip Rev: 2025A0 2/5 www.microdiode.com MDD2002KT 20V N-Channel Enhancement Mode MOSFET 10.Test Circuits And Waveforms Figure 1. Gate Charge test Circuit Figure 2. Switchingtime testcircuit & waveforms Figure 3. UnclampedInductiveSwitchingTestCircuit&Waveform Figure4 :Diode Recovery Test Circuit & Waveform The curve above is for reference only. Craftsman-Made Consciention Chip Rev: 2025A0 3/5 www.microdiode.com MDD2002KT 20V N-Channel Enhancement Mode MOSFET 11.Electrical Characteristics Diagrams 10 ID (A) 10 ID (A) 2.5V 8 2.0V 4.5V 8 6 6 4 4 VGS=1.5V 2 125℃ 2 VDS(V) 0 0 0.5 1 1.5 2 0 2.5 VGS(V) 0 0.5 Figure1: Output Characteristics 1E+01 40 VGS=2.5V 2.0 2.5 3.0 IS(A) 1E-01 30 TJ=125℃ 1E-02 25℃ 25 1E-03 VGS=4.5V 20 1E-04 ID(A) 0.1 0.2 0.3 0.4 0.5 0.6 VGS(V) VSD(V) 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current 4 1.5 1E+00 35 5 1 Figure 2: Typical Transfer Characteristics RDS(ON) (mΩ) 15 0 25℃ 103 VDS=10V ID=0.3A Ciss 102 3 Coss 2 101 Crss 1 0 Qg(nC) 0 1 2 3 4 5 6 100 0 5 10 15 20 25 30 35 40 Figure 6: Capacitance Characteristics C(pF) Figure 5: Gate Charge Characteristics Craftsman-Made Consciention Chip VDS(V) 4/5 www.microdiode.com MDD2002KT 20V N-Channel Enhancement Mode MOSFET 12. Outline Drawing SOT-523 Package Outline Dimensions 13. Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2025A0 5/5 www.microdiode.com