ME18VZ1BAB

ME18VZ1BAB 1. Features • 252Watts peak pulse power (tp = 8/20μs) • Bi-directional configurations • Solid-state silicon-avalanche technology • Capacitance: 20pF typical • Low clamping voltage • Low leakage current • Complies with following standards: — IEC 61000-4-2 (ESD) immunity test Air discharge: ±30KV Contact discharge: ±30KV — IEC61000-4-4 (EFT) 40A (5/50ns) — IEC61000-4-5(Lightning) 7A (8/20us) 2. Application • Cellular Handsets and Accessories • Personal Digital Assistants • Notebooks and Handhelds • Portable Instrumentation • Digital Cameras • Peripherals 3. Mechanical Data • Package: DFN1006 • UL Flammability Classification Rating 94V-0 • Packaging: Tape and Reel • RoHS/WEEE Compliant 4. Absolute Maximum Rating Parameter Symbol Value Unit ESD per IEC 61000-4-2 (Contact) ESD per IEC 61000-4-2 (Air) VESD ±30 ±30 KV Peak Pulse Power(8/20μs) P PP 252 W Reverse Working Voltage VRWM 18 V IPP 7 A Operating Temperature TOPT -55~+125 °C Storage Temperature Tstg -55~+150 °C Reverse Working Voltage Rev:2025A0 ME18VZ1BAB 5. Pinning information Pin Symbol Description 2 Bi Nonpolar Simplified outline Equivalent Circuit Marking Package DF DFN1006-2L 6.Electrical Characteristics(Tamb=25°C) Symbols Parameter Reverse Working Voltage Typ IR Clamping Voltage VC Junction Capacitance CJ Max 18 IT=1mA VBR Reverse Leakage Current Unit V V 19.5 VRWM=18V 0.5 uA IPP =1A , tp=8/20us 26 V Ipp=7A , tp=8/20us 36 V VR =0V ,f=1MHz 20 pF Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage@IPP Reverse Working Voltage IR Maximum Reverse Leakage Current IT Test Current VBR Min VRWM Reverse Breakdown Voltage VRWM Condition Breakdown Voltage@IT Craftsman-Made Consciention Chip Rev:2025A0 2/4 www.microdiode.com ME18VZ1BAB 7.Typical Characteristics Fig.4 Capacitance VS Bias Fig.3 Clamping Voltage Vs. Peak Pulse Current Craftsman-Made Consciention Chip Rev:2025A0 3/4 www.microdiode.com ME18VZ1BAB 8.Outline Drawing DFN1006 Package Outline Dimensions REF mm inch A 0.35~0.55 0.014~0.022 A1 0.00~0.05 0.000~0.002 A3 0.125REF 0.005REF D 0.95~1.10 0.037~0.043 E 0.55~0.70 0.022~0.028 L 0.45~0.55 0.018~0.022 e 0.65BSC 0.026BSC b 0.15~0.35 0.006~0.014 9. Reel packing Package Reel Size Reel DIA. (mm) Q'TY/Reel (pcs) QTY/Box (pcs) DFN1006 7' 178 10,000 100,000 Q'TY/Carton (pcs) 400,000 10.Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev:2025A0 4/ 4 www.microdiode.com