ESD0501BLC
Ultra Low Capacitance ESD Protection Diodes
DFN1006 Plastic-Encapsulate ESD Protection Diodes
DESCRIPTION
ESD0501BLC is a low-capacitance Transient Voltage Suppressor (TVS) designed to provid
electrostatic discharge (ESD) protection For high-speed data interfaces. With typical
capacitance of 0.25pF, ESD0501BLC is designed to protect parasitic-sensitive systems against
over-voltage and over-current transsient events. It complies with IEC 61000-4-2 (ESD), Level 4 (±
15kV air, ±8kV contact discharge), IEC 61000-4-4 (electrical fast transientt - EFT) (40A, 5/50 ns), very
fast charged devicee model (CDM) ESD and cable discharge event (CDE), etc. ESD0501BLC
uses ultra-small DFN1006 package. Each ESD0501BLC device can protect one high-speed data line.
It offers system designers flexibility to protect single data line where space is a premium concern.
Features
Peak Power Dissipation :100W (8/20μs)
Transient protection for high speed data lines
IEC61000-4-2 (ESD) ±20kV (air), ±20kV (contact)
IEC61000-4-4 (EFT) 40A (5/50ns)
Cable Discharge Event (CDE)
Package optimized for hingh-speed lines
Low clamping voltage
Low Capacitance :0.25pF(Typical)
Low leakage current
Applications
Pin Configuration
Serial ATA
Desktops, Servers and Notebooks
Cellular Phones
MDDI Ports
USB Data Line Protectioon
Display Ports
Digital Visual Interfacess (DVI)
Circuit Diagram
Mechanical Characteristics
Package: DFN1006
Flammability Rating: UL 94V-0
Packaging: Tape and Reel
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026
Marking: 5BU
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
Symbol
VESD
Value
± 20
± 20
Unit
kV
Peak Pulse Power(tp=8/20us waveform)
PPP
100
W
Operating Temperature
TOPT
−55 to +125
°C
Storage Temperature Range
TSTG
−55 to +150
°C
Lead Solder Temperature – Maximum (10 Second
Duration)
TL
260(10 sec.)
°C
The above data are for reference only.
http://www.microdiode.com
Rev:2025A2
Page :1
ESD0501BLC
Ultra Low Capacitance ESD Protection Diodes
Electrical Characteristics (TA=25°C unless otherwise specified)
Symbo
bol
Param
Test Condition
VRWM
Reverse Working Voltage
VBR
Reverse Breakdown
Voltage
IT = 1mA
IR
Reverse Leakage Current
VRWM = 5V
VC
Clamping Voltage
CJ
Junction Capacitance
Min
Typ
Max
Units
5.0
V
6
V
100
nA
IPP = 1A, tp = 8/20μs
11
13
V
IPP = 4A, tp = 8/20μs
18
25
V
VR = 0V, f = 1MHz
0.25
0.40
pF
The above data are for reference only.
http://www.microdiode.com
Rev:2025A1
Page :2
ESD0501BLC
Ultra Low Capacitance ESD Protection Diodes
ELECTRICAL CHARACTERISTICS CURVE
The above data are for reference only.
http://www.microdiode.com
Rev:2025A1
Page :3
ESD0501BLC
Ultra Low Capacitance ESD Protection Diodes
Outlitne Drawing
DFN1006 Package Outline Dimensions
A
DFN1006
Dim
Min
Max
Typ
A
0.50
0.45
0.55
b
0.45
0.55
0.50
D
1.05
0.95
1.00
E
0.55
0.60
0.65
e
0.40
L
0.20
0.30
0.25
R
0.07
0.17
0.12
All Dimensions in mm
D
R
E
b
e
L
Suggested Pad Layout
X1
Dimensions
C
G
X
X1
Y
X
Y
Value (in mm)
0.90
0.40
0.50
1.40
0.50
Note:
1.Controlling dimension:in/millimeters.
2.General tolerance: ±0.05mm.
3.The pad layout is for reference purposes only.
G
C
PACKAGE SPECIFICATIONS
Package Reel Size
DFN1006
Reel DIA.
(mm)
Q'TY/Reel
(pcs)
Box Size
(mm)
QTY/Box
(pcs)
Carton Size
(mm)
Q'TY/Carton
(pcs)
178
10,000
210×210×205
100,000
445×445×230
400,000
7'
Important Notice and Disclaimer
Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications
at any time without notice. Customers should obtain and confirm the latest product information and specifications before final
design,purchase or use.
Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or
customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are
purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen).
Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or
systems without express written approval of Microdiode Electronics (Shenzhen).
http://www.microdiode.com
Rev:2025A1
Page :4
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