MDD05N40A

MDD05N40A 40V N-Channel Enhancement Mode MOSFET 1. Description This 40V N-channel MOSFET is based on MDD's unique device design to achieve low RDS(ON) , fast switching and excellent avalanche characteristics. 2. Features • High dense cell design for extremely low RDS(ON) • Exceptional on-resistance and maximum DC current capability 3. Application • Load Switch for Portable Devices • Battery Powered System • DC-DC converter • LCD Display inverter • Portable Equipment 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V ID 5 A Pulsed Drain Current (Note 1) IDM 20 A Thermal Resistance, Junction-Ambient (Note 2) RθJA 100 °C/W Power Dissipation PD 1.2 W Junction Temperature TJ -55~+150 °C Storage Temperature Tstg -55~+150 °C Continuous Drain Current (Note 1) • Stresses exceeding Maximum Ratings may damage the device. • Maximum Ratings are stress ratings only. • Functional operation above the Recommended Operating Conditions is not implied. • Extended exposure to stresses above the recommended Operating Conditions may affect device reliability Notes: 1.Pulse width limited by maximum allowable junction temperature 2.Surface Mounted on FR4 Board, t＜10 sec. Rev: 2025A0 MDD05N40A 40V N-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description Simplified outline 1 G Gate 3 2 3 S Source D Drain Equivalent Circuit Package 05N40A SOT-23 XXY: Date code 1 2 6. TA=25°C unless otherwise specified Symbol Marking Min Typ Max Unit VGS=0V, ID=250μA 40 — — V Parameter Condition V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current VGS=±20V — — ±100 nA IDSS Drain-Source Leakage Current VDS =40V, VGS=0V — — 1 μA Gate Threshold Voltage VDS=VGS, I D =250μA 1.0 1.6 2.2 V VGS=10V, I D =4A — 27 34 mΩ VGS=4.5V, ID = 3A — 34 44 mΩ VGS(TH) RDS(ON) Drain-Source On-State Resistance 7. Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V VDS =20V f=1.0MHz VGS=0-10V VDS =20V ID=5A 8. Switching Characteristics Symbol td(on) Parameter Condition Turn on Delay Time VGS =10V VDD =20V ID=5A RG=2.2Ω Turn on Rise Time tr td(off) Turn Off Delay Time Turn Off Fall Time tf 9. Source Drain Diode Characteristics Symbol Condition Parameter Min Typ Max Unit — 370 — pF — 50 — pF pF — 38 — 11 — nC — 2 — nC — 3 — nC Min Typ Max Unit — — 8 ns 20 — — ns — 13 — ns — ns Typ Max Unit — Condition 2 — Drain-Source Diode Forward Voltage IS=5A, VGS=0V — 0.8 1.2 V trr Body Diode Reverse Recovery Time — ns Body Diode Reverse Recovery Charge 19 — Qrr IF=5A — 26 — nC VSD Craftsman-Made Consciention Chip Rev: 2025A0 di/dt=100A/μs 2/5 www.microdiode.com MDD05N40A 40V N-Channel Enhancement Mode MOSFET 10.Test Circuits And Waveforms Figure 1. Gate Charge test Circuit Figure 2. Switchingtime testcircuit & waveforms The curve above is for reference only. Craftsman-Made Consciention Chip Rev: 2025A0 3/6 www.microdiode.com MDD05N40A 40V N-Channel Enhancement Mode MOSFET 11.Electrical Characteristics Diagrams 20 VGS= 10V 9V 30 8V 7V 6V 25 Tj=25℃ 5V VDS=5V 15 4.5V ID-Drain Current (A) ID-Drain Current (A) 35 20 4V 15 3.5V 10 10 150℃ 5 3V 5 0 0 0 1 2 3 4 1.5 5 2 Figure1. Output Characteristics VGS-Gate to Source Voltage (V) 10 C-Capacitance (pF) Ciss 100 Coss Crss Tj=25℃ 4 VDS=20V ID=5A Tj=25℃ 8 6 4 2 10 20 30 40 0 5 VDS-Drain to Source Voltage (V) 10 15 Qg-Total Gate Charge (nC) Figure3. Capacitance Characteristics Figure4.Gate Charge 2.5 RDS(on)-Drain to Source Resistance Normalized 60 RDS(on)-Drain to Source resistance (mΩ) 3.5 0 0 50 40 30 ID=5A Tj=25℃ 3 3 Figure2. TransferCharacteristics 1000 10 2.5 Vgs-Gate to Source Voltage (V) VDS-Drain to Source Voltage (V) 20 25℃ Vgs=10V ID=5A 2 1.5 1 0.5 4 5 6 7 8 9 -75 10 VGS-Gate to Source Voltage (V) Rev: 2025A0 25 75 125 175 Tj-Junction Temperature (℃) Figure5. On-Resistance vs Gate to SourceVoltage Craftsman-Made Consciention Chip -25 4/6 Figure6.Normalized On-Resistance www.microdiode.com MDD05N40A 100 80 Is-Reverse Drain Current (A) RDS(on) -Drain to Source resistance (mΩ) 40V N-Channel Enhancement Mode MOSFET 60 40 VGS=4.5V VGS=10V 20 Tj=25℃ 10 150℃ 0.1 0 0 5 10 15 0.4 20 0.5 Figure7. RDS(on) VS Drain Current 0.7 0.8 0.9 1 1.1 Figure8. Forward characteristics of reverse diode 1.1 1.4 ID=250uA ID=250uA 1.2 VGS(th)-Threshold Voltage Normalized BVDSS-MAX Drain to Source Voltage Normalized 0.6 Vsd- Source to Drain Voltage (V) ID-Drain Current (A) 1.05 1 0.95 0.9 1.0 0.8 0.6 0.4 0.2 -75 -25 25 75 125 175 -75 -25 25 75 125 Tj-Junction Temperature (℃) Tj-Junction Temperature (℃) Figure9. Normalized breakdown voltage Figure10. Normalized Threshold voltage 175 1.5 Ptot-Power Dissipation (W) 6 ID-Drain Current (A) 25℃ 1 4 2 1 0.5 0 0 -50 0 50 100 -50 150 0 50 100 150 Ta-Ambient Temperature (℃) Ta-Ambient Temperature (℃) Figure9. Current Dissipation Figure10. Power Dissipation The curves above are for reference only. Craftsman-Made Consciention Chip Rev: 2025A0 5/6 www.microdiode.com MDD05N40A 40V N-Channel Enhancement Mode MOSFET 12. Outline Drawing SOT-23 Package Outline Dimensions A A1 b c D E E1 e L L1 θ L L1 E E1 Symbol 1 e Dimensions In Millimeters Min Typ Max 0.65 1.40 0.20 0.00 0.30 0.55 0.20 0.08 2.70 3.10 1.15 1.65 2.80 2.10 1.70 2.10 0.15 0.50 0.35 0° 0.70 12° 13. Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 14. Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2025A0 6/6 www.microdiode.com