MDD2002KDW

MDD2002KDW SOT-363 Plastic-Encapsulate MOSFETS SOT-363 20V N-Channel Enhancement Mode MOSFET RDS(on)Max V(BR)DSS 380mΩ@4.5V 20 V 450mΩ@2.5V ID MAX 0.75A Mechanical Data Feature z z z z z z z High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected：2kV Load Switch for Portable Devices. DC/DC Converter. z z z Marking SOT-363 Small Outline Plastic Package. Epoxy UL: 94V-0. Mounting Position: Any. Equivalent circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID 0.75 A Power Dissipation PD 200 mW RθJA 833 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~ +150 Thermal Resistance from Junction to Ambient http://www.microdiode.com Rev:2025A0 ℃ Page :1 MDD2002KDW MOSFET ELECTRICAL CHARACTERISTICS Ta=25°C unless otherwise specified Symbol Parameter Condition V(BR)DSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 20 IDSS Zero Gate Voltage Drain Current(TA=25℃) VDS=20V, VGS=0V IGSS Gate-Body Leakage Current VGS(TH) RDS(ON) Min Typ Max Unit -- -- V -- -- 1 μA VGS=±10V, VDS=0V -- -- ±10 μA Gate Threshold Voltage VDS=VGS, ID=250μA 0.3 0.65 1.0 V Drain-Source On-State Resistance① VGS=4.5V, ID=0.5A -- 250 380 mΩ Drain-Source On-State Resistance② VGS=2.5V, ID=0.4A -- 350 450 mΩ -- 79 -- pF -- 13 -- pF Dynamic Electrical Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance -- 9 -- pF Qg Total Gate Charge -- 5 -- nC Q gs Gate-Source Charge Q gd Gate-Drain(“Miller”) Charge VDS=10V, VGS=0V, f= 1MHz VDS=10V,ID=0.3A, VGS=4.5V --- 0.8 1.2 --- nC nC Switching Characteristics t d(on) Turn on Delay Time t d(off) Turn Off Delay Time tr Turn-on Rise Time tf Turn-off Fall Time VDS=10V, ID=0.5A, VGS=4.5V, RGEN=3Ω -- 6.7 -- 17.3 - 4.8 -- - 7.4 -- --- ns ns ns ns Notes: ① Pulse width limited by maximum allowable junction temperature ②Pulse test ; Pulse width300s, duty cycle2%. http://www.microdiode.com Rev:2025A0 Page :2 MDD2002KDW Typical Characteristics 10 ID (A) 10 2.5V 8 8 2.0V 4.5V ID (A) 6 6 4 4 VGS=1.5V 125℃ 2 2 VDS(V) 0 0 0.5 1 1.5 2 2.5 0 VGS(V) 0 Figure1: Output Characteristics 40 25℃ 0.5 1 1.5 2.0 2.5 3.0 Figure 2: Typical Transfer Characteristics RDS(ON) (mΩ) 1E+01 IS(A) 1E+00 35 VGS=2.5V 1E-01 30 TJ=125℃ 1E-02 25 25℃ 1E-03 VGS=4.5V 20 15 0 1E-04 ID(A) 0.1 0.2 0.3 0.4 0.5 0.6 Figure 3:On-resistance vs. Drain Current 5 4 VSD(V) 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 Figure 4: Body Diode Characteristics C(pF) VGS(V) 103 VDS=10V ID=0.3A Ciss 102 3 Coss 2 101 Crss 1 0 Qg(nC) 0 1 2 3 4 5 Figure 5: Gate Charge Characteristics 6 100 0 VDS(V) 5 10 15 20 25 30 35 40 Figure 6: Capacitance Characteristics The curves above are for reference only. http://www.microdiode.com Rev:2025A0 Page :3 MDD2002KDW Outlitne Drawing SOT-363 Package Outline Dimensions Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). http://www.microdiode.com Rev:2025A0 Page :4