ME20VZ1UABH

ME20VZ1UABH 1. Features • 868Watts peak pulse power (tp = 8/20μs) • Uni-directional configurations • Solid-state silicon-avalanche technology • Capacitance: 65pF typical • Low clamping voltage • Low leakage current • Complies with following standards: — IEC 61000-4-2 (ESD) immunity test Air discharge: ±30KV Contact discharge: ±30KV — IEC61000-4-4 (EFT) 40A (5/50ns) — IEC61000-4-5(Lightning) 28A (8/20us) 2. Application • Cellular Handsets and Accessories • Personal Digital Assistants • Notebooks and Handhelds • Portable Instrumentation • Digital Cameras • Peripherals 3. Mechanical Data • Package: DFN1006-2L • UL Flammability Classification Rating 94V-0 • Packaging: Tape and Reel • RoHS/WEEE Compliant 4. Absolute Maximum Rating Parameter Symbol Value Unit ESD per IEC 61000-4-2 (Contact) ESD per IEC 61000-4-2 (Air) VESD ±30 ±30 KV Peak Pulse Power(8/20μs) P PP 868 W Reverse Working Voltage VRWM 20 V IPP 28 A Operating Temperature TOPT -55~+125 °C Storage Temperature Tstg -55~+150 °C Maximum Reverse Peak Pulse Current Rev:2025A0 ME20VZ1UABH 5. Pinning information Pin Symbol Simplified outline Equivalent Circuit Marking Uni 2 DH Package DFN1006-2L 6.Electrical Characteristics(Tamb=25°C) Symbols Parameter Reverse Working Voltage Condition Min Typ 20 VRWM Reverse Breakdown Voltage IT=1mA VBR Reverse Leakage Current IR Clamping Voltage VC Junction Capacitance CJ Max VR =0V ,f=1MHz V V 22 VRWM=20V Ipp=28A , tp=8/20us Unit 28 65 1 uA 31 V pF 7.Electrical Parameters Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage@IPP VRWM Reverse Working Voltage IR Maximum Reverse Leakage Current IT Test Current VBR Breakdown Voltage@IT VF Forward Voltage IF Forward Test Current Craftsman-Made Consciention Chip Rev:2025A0 2/4 www.microdiode.com ME20VZ1UABH 8.Typical Characteristics Fig.4 Capacitance VS Reverse Voltage Fig.3 Clamping Voltage Vs. Peak Pulse Current Craftsman-Made Consciention Chip Rev:2025A0 3/4 www.microdiode.com ME20VZ1UABH 9.Outline Drawing DFN1006-2L Package Outline Dimensions REF mm inch A 0.35~0.55 0.014~0.022 A1 0.00~0.05 0.000~0.002 A3 0.125REF 0.005REF D 0.95~1.10 0.037~0.043 E 0.55~0.70 0.022~0.028 L 0.45~0.55 0.018~0.022 e 0.65BSC 0.026BSC b 0.15~0.35 0.006~0.014 10. Reel packing Package DFN1006-2L Reel Size Reel DIA. (mm) Q'TY/Reel (pcs) QTY/Box (pcs) 7' 178 10,000 100,000 Q'TY/Carton (pcs) 400,000 11.Important Notice and Disclaimer Microdiode Semiconductor (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Semiconductor (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Semiconductor (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Semiconductor (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Semiconductor (Shenzhen). Microdiode Semiconductor (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Semiconductor (Shenzhen). Craftsman-Made Consciention Chip Rev:2025A0 4/ 4 www.microdiode.com