ME12VZ1UAH

ME12VZ1UAH 1. Protection Solution To Meet • IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) • IEC61000-4-4 (EFT) 80A (5/50ns) • IEC61000-4-5 (Lightning) 200A (8/20µs) 2. Features • Protects one Uni-directional Vbus • Low clam ping voltage • Working voltage: 12V • Low leakage current • RoHS com pliant 3. Main Application • Cell phone handsets and accessories • Microprocessor based equipm ent • Personal digital assistants (PDA’s) • Notebooks, desktops, and servers • Portable instrum entation 4. Mechanical Characteristics • DFN2020-3L package • Molding com pound flam m ability rating: UL 94V-0 • Weight 8 m illigram s (approxim ate) • Lead finish: lead free • Marking code: Z12N 5. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Value Unit VESD-Contact ±30 KV ESD per IEC 61000-4-2 (Air) VESD-Air ±30 KV Peak Pulse Power(8/20us) Ppp 5600 W Operating Tem p erature TOPT -55~+150 °C Storage Tem p erature Range Tstg -55~+150 °C ESD per IEC 61000-4-2 (Contact) Rev:2025A0 Symbol ME12VZ1UAH 6. Pinning information Simplified outline Equivalent Circuit Marking Package DFN20203L 7.Electrical Characteristics(Tamb=25°C) Parameter Condition Symbols Reverse Working Voltage Typ VRWM VBR Breakdown Voltage Min IT =1mA Reverse Leakage Current IR VRWM=12V Clamping Voltage VC Ipp=200A , tp=8/20us Junction Capacitance CJ VR =0V ,f=1MHz Max 12 Unit V V 13.3 26 1500 1 uA 28 V pF 8.Electrical Parameters Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current@VRWM IT Test Current VBR Breakdown Voltage @IT VF Forward Voltage IF Forward Currecnt Craftsman-Made Consciention Chip Rev:2025A0 2/5 www.microdiode.com ME12VZ1UAH 9.Typical Characterisitics Fig.2 Contact Discharge Current Waveform per 100 90 IEC61000-4-2 100 90 Front time: T1= 1.25 × T = 8μs Time to half-value: T2= 20μs Current (%) Peak puls e c urrent (% ) Fig.1 8/20us Waveform Per IEC61000-4-5 50 T2 10 0 0 10 5 T1 T 10 15 Time (μs) 20 25 30ns 30 tr = 0.7~1ns Fig.3 Clamping Voltage Vs. Peak Pulse Current 60ns t Time (ns) Fig.4 Power Derating The curve above is for reference only. Craftsman-Made Consciention Chip Rev:2025A0 3/5 www.microdiode.com ME12VZ1UAH 10. Outline Drawing DFN2020 - 3 L Package Outline Dimensions 11. Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 12.PACKAGE SPECIFICATIONS Package Reel Size Reel DIA. (mm) Q'TY/Reel (pcs) QTY/Box Q'TY/Carton (pcs) (pcs) DFN2020-3L 7' 178 3000 45,000 180,000 Craftsman-Made Consciention Chip Rev:2025A0 4/5 www.microdiode.com ME12VZ1UAH 13.Important Notice and Disclaimer Microdiode Semiconductor (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Semiconductor (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Semiconductor (Shenzhen) assume any liability for application assistance orcustomer product design. Microdiode Semiconductor (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Semiconductor (Shenzhen). Microdiode Semiconductor (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev:2025A0 5/5 www.microdiode.com