MDDG04R06Q

MDDG04R06Q 40V N-Channel Enhancement Mode MOSFET 1. Description This N-Channel MOSFET is produced using MDD Semiconductor's advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. 2. Features • Max RDS(on) = 5.5 mΩ at VGS = 10 V, ID = 20A • 100% UIS Tested • 100% dVDS Tested 3. Application • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter • DC to DC converters 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Symbol Value Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Parameter Continuous Drain Current (Note 1) ID 60 A Pulsed Drain Current (Note 2) IDM 240 A Single Pulsed Avalanche Energy (Note 3) EAS 26 mJ Thermal Resistance, steady-state RθJA 45 °C/W PD 40 W TJ -55~+150 °C Tstg -55~+150 °C Power Dissipation Junction Temperature Storage Temperature Note: 1)Calculated continuous current based on maximum allowable junction temperature. 2)Repetitive rating, pulse width limited by max. junction temperature. 3)EAS condition：TJ=25°C, VDD=20V, VGS=10V, L= 0.1mH, Rg= 25Ω, ID=23A Rev: 2025A1 MDDG04R06Q 40V N-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 4 G Gate 5-8 D Drain 1-3 S Simplified outline Equivalent Circuit 6. TA=25°C unless otherwise specified Parameter V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current Package MDD G04R06Q Source Symbol Marking Condition Min PDFN3*3-8L Typ Max 40 — Forward VGS=20V — — 100 nA Reverse VGS=-20V — — -100 nA 1 μA V Drain-Source Leakage Current VDS =40V, V GS=0V — VGS(TH) Gate Threshold Voltage VDS=VGS, I D=250μA 1.0 1.35 2.5 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=20A — 4.5 5.5 mΩ VGS=4.5V, ID=15A — 5.9 8.5 mΩ Min Typ Max Unit VGS=0V VDS =20V f=1MHz — 875 — pF VGS=0 to 10V VDS=20V ID=20A — IDSS 7. Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 8. Switching Characteristics Symbol td(on) tr td(off) tf Parameter Condition Turn on Delay Time VGS=10V VDD =20V ID=30A RG=6Ω Turn on Rise Time Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol VSD Parameter trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Craftsman-Made Consciention Chip Condition IS=10A, VGS=0V Drain-Source Diode Forward Voltage Rev: 2025A1 Condition IF=20A di/dt=100A/μs 2/5 — — — — — Unit VGS=0V, ID=250μA 524 16 17 5 — pF — pF — nC — nC — nC — 2 Min Typ Max Unit — 6.5 — ns — 56 — — 26 — ns ns — 84 — ns Min Typ Max Unit — — 0.8 — — V ns — 9.6 — nC 25 www.microdiode.com MDDG04R06Q 40V N-Channel Enhancement Mode MOSFET 10.Test Circuits And Waveforms Figure 1. Gate charge testcircuit & waveform Figure 2.Switching time testcircuit & waveforms Figure 3.Unclamped inductive switching (UIS)test circuit & waveforms Figure 4. Diode reverse recoverytest circuit& waveforms Craftsman-Made Consciention Chip Rev: 2025A1 3/5 www.microdiode.com MDDG04R06Q 40V N-Channel Enhancement Mode MOSFET 11.Electrical Characteristics Diagrams 120 20 VGS = 10V VGS = 8.0V VGS = 6.0V VDS = 5.0V 12 ID (A) ID (A) 16 VGS = 5.5V 90 VGS = 5.0V 60 8 VGS = 4.8V 30 TJ = 25°C TJ = 125°C VGS = 4.5V 4 VGS = 4.2V 0 0 0.4 0.8 1.2 1.6 2 0 1 2 3 VDS (V) Figure 1. Typ. output characteristics 6 2.5 2 Normalized RDS(ON) 8 RDS(ON) (mΩ) 5 Figure 2. Typ. transfer characteristics 10 6 VGS = 10V 4 VGS = 10V ID = 20A 1.5 1 0.5 2 0 VGS(V) 0 0 30 60 90 120 150 -50 0 50 100 150 Temperature (°C) ID (A) Figure 4. RDS(ON) vs. Junction Temperature Figure 3. On-Resistance vs. Drain Current 100 4 VGS = VDS 3.5 10 ID = 1.0mA 2.5 IS (A) VGS(th) (V) 3 ID = 250μA 1 TJ = 25°C TJ = 125°C 0.1 2 0.01 1.5 1 -50 0 50 100 150 0.001 TJ(℃) Junction Temperature Figure 5. Normalized Breakdown Voltage vs. Junction Temperature Craftsman-Made Consciention Chip Rev: 2025A1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD(V) Figure 6. Forward characteristic of body diode 4/5 www.microdiode.com MDDG04R06Q 40V N-Channel Enhancement Mode MOSFET 1000 500 Limited by RDS(ON) 100 1.0μs 300 10μs 10 100μs 1 10ms ID (A) PD (W) 400 200 1.0ms 100 TJ_Max = 150°C DC TC = 25°C 0 0.00001 0.0001 0.001 0.01 0.1 1 10 0.1 100 0.1 1 10 100 1000 VDS(V) Pulse Width (s) Figure 7. Single Pulse Power Rating Figure 8. Maximun Safe Operating Area 12. Outline Drawing PDFN3*3-8L Package Outline Dimensions Symbol A b C D D1 D2/D3 d E E1 E2 e H1 H2 K L1/L2 θ N O mm Min Nom Max 0.700 0.250 0.150 3.050 2.400 1.000 0.300 3.200 2.900 1.720 0.800 0.325 0.200 3.150 2.500 1.050 0.400 3.300 3.000 1.820 0.65 BSC. 0.415 0.400 0.770 0.150 12° 0.2 REF. 0.900 0.400 0.250 3.250 2.600 1.100 0.500 3.400 3.100 1.920 0.315 0.300 0.670 0.100 11° 0.000 0.515 0.500 0.870 0.200 13° 0.150 13. 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Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2025A1 5/5 www.microdiode.com