MDD68N10D

MDD68N10D 100V N-Channel Enhancement Mode POWER MOSFET 1. Description This N-Channel MOSFET is produced using MDD's advanced Power Trench technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. 2. Features • Max RDS(on) = 9mΩ at VGS = 10 V, ID = 20 A • Extremely Low Reverse Recovery Charge, Qg • 100% UIS Tested • RoHS Compliant 3. Application • Power Management in Telecom.,Industrial Automation • Motor Drives and Uninterruptible Power Supplies • Current Switching in DC/DC&AC/DC(SR) Sub-systems 4. Absolute Maximum Ratings(TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 1) ID 68 A Pulsed Drain Current (Note 2) IDM 272 Single Pulsed Avalanche Energy (Note 3) EAS 90.25 mJ Thermal Resistance, steady-state RθJA 45 °C/W PD W TJ 95 -55~+150 °C Tstg -55~+150 °C Power Dissipation Junction Temperature Storage Temperature Note: 1)Calculated continuous current based on maximum allowable junction temperature. 2)Repetitive rating, pulse width limited by max. junction temperature. 3)EAS condition：TJ=25°C, VDD=50V, VGS=10V, L= 0.5mH, Rg= 25Ω, IAS=19A. Rev: 2025A0 A MDD68N10D 100V N-Channel Enhancement Mode MOSFET 5. Pinning information Pin Symbol Description 1 G Gate 2 3 D S Simplified outline Equivalent Circuit Marking D Drain MDD 68N10D G Source Package TO-252 XXY: Date code S 6. TA=25°C unless otherwise specified Symbol V(BR)DSS Min Typ Max VGS=0V, ID=250μA 100 — — V Forward VGS=20V — — 100 nA Reverse VGS=-20V — — -100 nA Parameter Condition Drain-Source Breakdown Voltage Unit IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VDS=100V, VGS =0V — — 1 μA VGS(TH) Gate Threshold Voltage VDS=VGS, I D =250μA 2.0 2.8 3.6 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=20A — 7.6 9 mΩ Min Typ Max Unit — 1645 — pF 7. Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V VDS=40V f=1MHz VGS=0 to 10V VDS=40V ID=25A 8. Switching Characteristics Symbol td(on) tr td(off) tf Parameter Condition Turn on Delay Time VGS =10V VDD =50V ID=25A RG=3Ω Turn on Rise Time Turn Off Delay Time Turn Off Fall Time 9. Source Drain Diode Characteristics Symbol Condition Parameter Condition — — 743 22 — — pF pF — 28 — nC — 12 — nC — 5 — nC Min Typ Max Unit — — 50 ns 14 — — — 58 — ns ns — 24 — ns Min Typ Max Unit Drain-Source Diode Forward Voltage IS=30A, VGS=0V — 0.8 1.2 V trr Body Diode Reverse Recovery Time — 53 — ns Qrr Body Diode Reverse Recovery Charge IF=40A di/dt=100A/μs — 128 — nC VSD Craftsman-Made Consciention Chip Rev: 2025A0 2/5 www.microdiode.com MDD68N10D 100V N-Channel Enhancement Mode MOSFET 10.Test Circuits And Waveforms Figure 1. Gate charge testcircuit & waveform Figure 2.Switching time testcircuit & waveforms Figure 3.Unclamped inductive switching (UIS)test circuit & waveforms Figure 4. Diode reverse recoverytest circuit& waveforms Craftsman-Made Consciention Chip Rev: 2025A0 3/5 www.microdiode.com MDD68N10D 100V N-Channel Enhancement Mode MOSFET 11.Electrical Characteristics Diagrams 100 VGS = 10V VDS = 5V 80 VGS = 4.5V 60 ID(A) ID(A) VGS = 3.5V 50 40 VGS = 3.0V TJ = 25°C 20 0 0 0 1 2 3 4 5 0 1 2 3 VDS(V) 6 25 30 Figure 2. Typ. transfer characteristics 10 12 10 VDD = 40V ID = 25A 8 8 VGS = 10V 6 6 VGS(V) RDS(ON)(mΩ) 5 VGS(V) Figure 1. Typ. output characteristics 4 4 2 2 0 0 10 20 25 0 30 0 5 10 15 ID(A) 20 Qg(nC) Figure 3. On-Resistance vs. Drain Current Figure 4. Gate Charge Characteristics 100 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 VGS = 0V Pulse Width≤300μs Duty Cycle≤0.5% 10 VGS = 10V IS(A) Normalized RDS(ON) 4 TJ = 125°C 1 TJ = -55°C TJ = 25°C 0.1 -80 -40 0 40 80 120 160 200 0.01 0 TJ(℃) Junction Temperature 0.2 0.4 0.6 0.8 1 1.2 VSD(V) Figure 5. Normalized on Resistance vs. Junction Temperature Craftsman-Made Consciention Chip Rev: 2025A0 Figure 6. Forward characteristic of body diode 4/5 www.microdiode.com MDD68N10D 100V N-Channel Enhancement Mode MOSFET 12. Outline Drawing TO-252 Package Outline Dimensions 13. Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). Craftsman-Made Consciention Chip Rev: 2025A0 5/5 www.microdiode.com