SFD7N65E

SFD7N65E 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features ◆VDS(V)=650V, ID=7A ◆RDS(ON) TYP:1.1Ω@VGS=10V ID=3.5A MAX:1.4Ω Applications ◆Power faction correction (PFC) ◆Switched mode power supplies (SMPS) ◆Uninterruptible power supply (UPS) ◆LED lighting power ORDERING INFORMATION Part No. SFD7N65E Package Marking Material Packing TO-252-2L SFD7N65E Pb Free Reel Http://www.hi-semicon.com Rev 1.1 Page 1 of 11 SFD7N65E ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Characteristics Ratings Symbol Unit SFD7N65E Drain-Source Voltage VD S 650 V Gate-Source Voltage VGS ±30 V TC = 25C Drain Current TC = 100C Drain Current Pulsed 7.0 ID A 5.6 28 A 100 W 0.8 W/C EAS 537 mJ Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C TL 300 ℃ (Note 1) Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 2) Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds IDM PD THERMAL CHARACTERISTICS Characteristics MAX Symbol Unit SFD7N65E Thermal Resistance, Junction-to-Case RθJC 1.25 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W ELECTRICAL CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit BVDSS VGS=0V, ID=250µA 650 700 -- V IDSS VDS=650V, VGS=0V -- 3.3 100 nA Off Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current IGSS VGS=30V, VDS=0V -- 3.4 100 nA Gate-Source Leakage Current IGSS VGS=-30V, VDS=0V -- -2.1 -100 nA VGS(th) VGS= VDS, ID=250µA 2 2.9 4.0 V VGS=10V, ID=1A -- 1.0 1.38  VGS=10V, ID=3.5A -- 1.1 1.4   On Characteristics Gate Threshold Voltage Static Drain- Source On State Resistance RDS(on) Dynamic Characteristics Gate Resistance Rg VGS=0V; f=1.0MHZ 1 2.2 10 Input Capacitance Ciss VDS=25V -- 1100 -- Output Capacitance Coss VGS=0V -- 90.5 -- Reverse Transfer Capacitance Crss f=1.0MHZ -- 4.9 -- VDD=325V; VGS=10V -- 11.5 -- RG=10; ID=7A -- 26.3 -- pF pF Switching Characteristics Turn-on Delay Time td(on) Turn-on Rise Time tr Http://www.hi-semicon.com (Note 3.4) Rev 1.1 ns Page 2 of 11 SFD7N65E Turn-off Delay Time td(off) VDD=325V; VGS=10V -- 39.2 -- RG=10; ID=7A (Note 3.4) -- 31.5 -- Turn-off Fall Time tf Total Gate Charge Qg VDS=520V, ID=7A -- 15.5 -- Gate-Source Charge Qgs VGS=10V -- 4.3 -- Gate-Drain Charge Qgd -- 6.6 -- (Note 3.4) ns nc SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Continuous Source Current IS Integral Reverse P-N -- -- 7 Pulsed Source Current ISM -- -- 28 Diode Forward Voltage VSD IS=7A,VGS=0V -- 0.82 1.2 V Reverse Recovery Time Trr IF=7A,VR=520V, -- 521 -- ns Reverse Recovery Charge Qrr dIF/dt=100A/µS -- 3.6 -- µC Junction Diode in the MOSFET Unit A 1.Pluse width limited by maximum junction temperature 2.L=10mH, IAS=6A, VDD=100V, VG=10V, RG=25, starting TJ=25C 3.Pulse Test: Pulse width ≤300μs, Duty cycle≤2% 4.Essentially independent of operating temperature Http://www.hi-semicon.com Rev 1.1 Page 3 of 11 SFD7N65E Typical Performance Characteristics Http://www.hi-semicon.com Rev 1.1 Page 4 of 11 SFD7N65E Typical Performance Characteristics Http://www.hi-semicon.com Rev 1.1 Page 5 of 11 SFD7N65E Typical Performance Characteristics Http://www.hi-semicon.com Rev 1.1 Page 6 of 11 SFD7N65E Test Circuit Http://www.hi-semicon.com Rev 1.1 Page 7 of 11 SFD7N65E Test Circuit Http://www.hi-semicon.com Rev 1.1 Page 8 of 11 SFD7N65E Package Dimensions of TO-252-2L Http://www.hi-semicon.com Rev 1.1 Page 9 of 11 SFD7N65E Package Dimensions of TO-252-2L Http://www.hi-semicon.com Rev 1.1 Page 10 of 11 SFD7N65E Disclaimer: ► Hi-semicon reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ► All semiconductor products malfunction or fail with some probability under special conditions. When using Hisemicon products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Hi-semicon products could cause loss of body injury or damage to property. ► Hi-semicon will supply the best possible product for customers! Http://www.hi-semicon.com Rev 1.1 Page 11 of 11