SFD5N50-A

SFX5N50 5A, 500V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION This N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, VDMOS technology. Features ◆VDS=500V, ID=5A ◆RDS(ON) TYP:1.45Ω@VGS=10V ID=2.5A Applications ◆Power faction correction (PFC) ◆Switched mode power supplies (SMPS) ◆Uninterruptible power supply (UPS) ◆LED lighting power ORDERING INFORMATION Part No. Package Marking Material Packing SFF5N50 TO-220F-3L SFF5N50 Pb free Tube SFD5N50 TO-252-2L SFD5N50 Pb free Reel Http://www.hi-semicon.com Rev 1.0 Page 1 of 9 SFX5N50 ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Characteristics Ratings Symbol SFF5N50 Unit SFD5N50 Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V TC = 25C Drain Current TC = 100C Drain Current Pulsed (Note 1) Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy 5 ID A 3.5 IDM 20 PD A 40 73 W 0.35 0.61 W/C EAS 405 mJ Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C TL 300 C (Note 2) Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds THERMAL CHARACTERISTICS Characteristics MAX Symbol SFF5N50 SFD5N50 Unit Thermal Resistance, Junction-to-Case RθJC 2.8 1.6 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.0 C/W ELECTRICAL CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Off Characteristics BVDSS VGS=0V, ID=250µA 500 -- -- V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V -- -- 1 uA Gate-Source Leakage Current IGSS VGS=30V, VDS=0V -- -- 100 Gate-Source Leakage Current IGSS VGS=-30V, VDS=0V -- -- -100 VGS(th) VGS= VDS, ID=250µA 2.0 2.8 4.0 V RDS(on) VGS=10V, ID=2.5A -- 1.45 1.7  Gate Resistance Rg VGS=0V; f=1.0MHZ 1 7.0 10  Input Capacitance Ciss VDS=25V -- 580 -- Output Capacitance Coss VGS=0V -- 50 -- Reverse Transfer Capacitance Crss f=1.0MHZ -- 1.5 -- Turn-on Delay Time td(on) VDD=250V RG=25 -- 17.5 -- Turn-on Rise Time tr ID=5A -- 36.7 -- Drain -Source Breakdown Voltage nA On Characteristics Gate Threshold Voltage Static Drain- Source On State Resistance Dynamic Characteristics pF Switching Characteristics Http://www.hi-semicon.com (Note 3.4) Rev 1.0 ns Page 2 of 9 SFX5N50 Turn-off Delay Time td(off) VDD=250V RG=25 -- 29.8 -- ID=5A -- 23.6 -- Turn-off Fall Time tf Total Gate Charge Qg VDS=400V, ID=5A -- 11.9 -- Gate-Source Charge Qgs VGS=10V -- 3.6 -- Gate-Drain Charge Qgd -- 5.8 -- (Note 3.4) (Note 3.4) ns nc SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Continuous Source Current IS Integral Reverse P-N -- -- 5 Pulsed Source Current ISM -- -- 20 Diode Forward Voltage VSD IS=5A,VGS=0V -- 0.95 1.4 V Reverse Recovery Time Trr IF=5A,VR=500V, -- 425 -- ns Reverse Recovery Charge Qrr dIF/dt=100A/µS -- 2.1 -- µC Junction Diode in the MOSFET Unit A 1.Pluse width limited by maximum junction temperature 2.L=10mH, VDD=100V, VG=10V, RG=25, starting TJ=25C 3.Pulse Test: Pulse width ≤300μs, Duty cycle≤2% 4.Essentially independent of operating temperature Http://www.hi-semicon.com Rev 1.0 Page 3 of 9 SFX5N50 Typical Performance Characteristics Http://www.hi-semicon.com Rev 1.0 Page 4 of 9 SFX5N50 Typical Performance Characteristics Http://www.hi-semicon.com Rev 1.0 Page 5 of 9 SFX5N50 Test Circuit Http://www.hi-semicon.com Rev 1.0 Page 6 of 9 SFX5N50 Package Dimensions of TO-220F-3L Http://www.hi-semicon.com Rev 1.0 Page 7 of 9 SFX5N50 Package Dimensions of TO-252-2L Http://www.hi-semicon.com Rev 1.0 Page 8 of 9 SFX5N50 Disclaimer: ► Hi-semicon reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ► All semiconductor products malfunction or fail with some probability under special conditions. When using Hisemicon products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Hi-semicon products could cause loss of body injury or damage to property. ► Hi-semicon will supply the best possible product for customers! Http://www.hi-semicon.com Rev 1.0 Page 9 of 9