P8806BM

N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM P8806BM SOT-23 Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID 60V 88mΩ 2A G G. GATE D. DRAIN S. SOURCE S ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C TC = 70 °C Pulsed Drain Current 1 1.6 IDM TA = 25 °C Power Dissipation 2 ID 0.78 PD TA = 70 °C Operating Junction & Storage Temperature Range A 11 W 0.5 Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient SYMBOL 2 TYPICAL MAXIMUM UNITS 159 °C / W RJA 1 Pulse width limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 2 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 VGS(th) VDS = VGS, ID = 250A 1.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 Zero Gate Voltage Drain Current IDSS VDS = 48V, VGS = 0V 1 VDS = 40V, VGS = 0V, TJ = 55 °C 10 Gate Threshold Voltage Drain-Source On-State 1 Resistance RDS(ON) V 1.9 2.3 VGS =4.5V, ID = 2A 71 108 VGS = 10V, ID = 2 A 59 88 nA A mΩ J-33-2 REV 1.1 1 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM P8806BM SOT-23 Halogen-Free & Lead-Free Forward Transconductance 1 gfs VDS = 5V, ID = 2A 10 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 228 286 343 30 38 45.6 Output Capacitance Coss Reverse Transfer Capacitance Crss 16 28 39 Qg 6.8 8.5 10.2 0.6 0.8 1 2 3.3 4.6 Total Gate Charge 2 Gate-Source Charge Gate-Drain Charge 2 Fall Time 2 2 Turn-Off Delay Time VDS = 30V , VGS = 10V, ID = 2A Qgs Qgd Turn-On Delay Time Rise Time 2 2 2 td(on) pF nC 8.3 tr VDS = 30V , 10 td(off) ID  2A, VGS = 10V, RGEN =6Ω 20 tf nS 4.5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C) Continuous Current Forward Voltage 1 IS VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr IF = 2A, VGS = 0V IF = 2A, dlF/dt = 100A / S 0.6 A 1.2 V 9 18 27 nS 5 10 15 nC Pulse test : Pulse Width  300 sec, Duty Cycle  2％. Independent of operating temperature. 1 2 J-33-2 REV 1.1 2 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOT-23 Halogen-Free & Lead-Free Output Characteristics Transfer Characteristics 12 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V 9 ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) 12 VGS=3.2V 6 VGS=3V 3 9 6 25℃ 3 125℃ 0 1 2 3 4 5 0 6 VDS, Drain-To-Source Voltage(V) 1 2 3 4 5 VGS, Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage 0.5 On-Resistance VS Drain Current 0.12 RDS(ON)ON-Resistance(OHM) ID=2A RDS(ON)ON-Resistance(OHM) -20℃ 0 0 0.4 0.3 0.2 0.1 0.09 VGS=4.5V 0.06 VGS=10V 0.03 0 0 2 4 6 8 0 10 VGS, Gate-To-Source Voltage(V) 3 6 9 12 ID , Drain-To-Source Current(A) On-Resistance VS Temperature Capacitance Characteristic 350 2.4 2.2 300 CISS 2.0 C , Capacitance(pF) Normalized Drain to Source ON-Resistance P8806BM 1.8 1.6 1.4 1.2 1.0 VGS=10V ID=2A 0.8 250 200 150 100 50 COSS CRSS 0.6 0 0.4 -50 -25 0 25 50 75 100 125 0 150 5 10 15 20 25 30 VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) J-33-2 REV 1.1 3 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM Source-Drain Diode Forward Voltage 100 VDS=30V ID=2A 8 IS , Source Current(A) VGS , Gate-To-Source Voltage(V) SOT-23 Halogen-Free & Lead-Free Gate charge Characteristics Characteristics 10 P8806BM 6 4 2 10 1 150℃ 25℃ 0.1 0 0 2 4 6 8 0.0 10 0.2 Qg , Total Gate Charge(nC) 0.4 0.6 0.8 1.2 1.4 VSD, Source-To-Drain Voltage(V) Safe Operating Area Single Pulse Maximum Power Dissipation 12 100 Operation in This Area is Limited by RDS(ON) Single Pulse RθJA = 159 ˚C/W TA = 25˚C 9 10 Power(W) ID , Drain Current(A) 1.0 1 6 1ms 0.1 3 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 159 ˚C/W 4.Single Pulse 10ms 100ms DC 0 0.001 0.01 0.1 1 10 100 0.01 VDS, Drain-To-Source Voltage(V) 0.1 1 10 100 Single Pulse Time(s) Transient Thermal Response Curve Transient Thermal Resistance r(t) , Normalized Effective 10 1 Duty cycle=0.5 Notes 0.2 0.1 0.1 0.05 1.Duty cycle, D= t1 / t2 2.RthJA = 159 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.02 0.01 single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 T1 , Square Wave Pulse Duration(S) J-33-2 REV 1.1 4