WM02P06L

Document: W0803106, Rev: B WM02P06L 1 P-Channel MOSFET Features ⚫ ⚫ ⚫ ⚫ ⚫ VDS= -20 V, ID = -0.66 A RDS(on) < 0.52Ω @ VGS = -4.5 V RDS(on) < 0.78Ω @ VGS = -2.5 V Enables High Density PCB Manufacturing Low Voltage Drive Makes this Device Ideal for Portable Equipment Advanced Trench Process Technology ESD Protected SOT-523 Mechanical Characteristics ⚫ SOT-523 Package ⚫ Marking : Making Code ⚫ RoHS Compliant Schematic & PIN Configuration D G D G S S Device symbol SOT-523(Top View) Absolute Maximum Rating Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -0.66 A Pulsed Drain Current IDM -1.2 A Power Dissipation PD 150 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 to +150 °C Thermal Resistance from Junction to Ambient RθJA 833 °C/W ©2019 WAYON Corporation www.way-on.com 1 / 4 P Channel MOSFET WM02P06L Electrical Characteristics (Tamb=25°C unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit -20 - - V Static Characteristics Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS VDS =-20V, VGS = 0 V - - -1 µA Gate-body Leakage Current IGSS VDS = 0 V, VGS = ±10V - - ±20 µA VGS = -4.5V, ID = -0.66A - 450 520 VGS = -2.5V, ID = -0.60A - 680 780 VGS = -1.8V, ID = -0.50A - 950 - VDS = VGS, ID = -250µA -0.3 -0.6 -1.1 - 113 - - 15 - Drain-Source On-state Resistance1 Gate Threshold Voltage RDS(on) VGS(th) VGS = 0 V, ID = -250µA mΩ V Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 9 - Turn-On Delay Time2 td(on) - 9 - Turn-On Rise Time2 tr - 5.7 - Turn-Off Delay Time2 td(off) - 32.6 - - 20.3 - - - -1.2 VGS = 0V, VDS = -16V, f = 1MHz pF Switching Characteristics Turn- Off Fall Time2 VDS = -10V, VGS = -4.5V, ID = -0.2A, RG= 10Ω tf ns Source-Drain Diode Characteristics Body Diode Voltage VDS IS= -0.5A, VGS = 0V V Notes : 1. Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2. Guaranteed by design, not subject to production testing ©2019 WAYON Corporation www.way-on.com 2 / 4 P Channel MOSFET WM02P06L Typical Characteristics Figure 1. Output Characteristics Figure 3. Figure 2. Transfer Characteristics RDS(ON) vs. ID Figure 4. RDS(ON) vs. VGS Figure 5. IS vs. VSD Figure 6. VGS(th) vs.TJ ©2019 WAYON Corporation www.way-on.com 3 / 4 P Channel MOSFET WM02P06L Outline Drawing – SOT-523 PACKAGE OUTLINE D e1 SOT-523 θ b1 DIMENSIONS c SYMBOL INCHES MIN MAX MIN MAX A 0.70 0.90 0.028 0.035 A1 0.00 0.10 0.000 0.004 A2 0.70 0.80 0.028 0.031 b1 0.15 0.25 0.006 0.010 b2 0.25 0.35 0.010 0.014 c 0.10 0.20 0.004 0.008 D 1.50 1.70 0.059 0.067 L L1 E E1 A1 MILLIMETER A b2 A2 e X E 0.70 0.90 0.028 0.035 E1 1.45 1.75 0.057 0.069 e1 0.90 1.10 0.035 0.043 L 0.30 0.50 0.012 0.020 L1 0.26 0.46 0.01 0.018 θ 0 8○ 0 8○ Notes DIMENSIONS Z C G Y P1 DIM C P P1 G X Y Z INCHES .055 .039 .020 .024 .016 .031 .087 MILLIMETERS 1.40 1.00 0.50 0.60 0.40 0..80 2.20 1. Dimensioning and tolerances per ANSI Y14.5M, 1985. 2. Controlling Dimension: Inches 3. Pin 3 is the cathode (Unidirectional Only). 4. Dimensions are exclusive of mold flash and metal burrs. P Marking Codes Part Number WM02P06L Marking Code 06K Package Information Qty：3k/Reel CONTACT INFORMATION No.1001, Shiwan (7) Road, Pudong District, Shanghai, P.R.China.201207 Tel: 86-21-68969993 Fax: 86-21-50757680 Email: market@way-on.com WAYON website: http://www.way-on.com For additional information, please contact your local Sales Representative. ® is registered trademark of Wayon Corporation. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. ©2019 WAYON Corporation www.way-on.com 4 / 4