UMW
R
IRF7240
P-Channel MOSFET
Features
VDS (V) = -40V
ID = -10.5 A
RDS(ON)
16m
(VGS = -10V)
RDS(ON)
27m
(VGS = -4.5V)
S
Ultra Low On-Resistance
S
Surface Mount
S
1
8
2
7
3
6
4
5
A
D
D
D
Lead-Free
G
D
SOP-8
Description
The SOP-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-40
-10.5
-8.6
-43
2.5
1.6
20
± 20
-55 to + 150
V
mW/°C
V
°C
Max.
Units
50
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
1
UTD Semiconductor Co.,Limited
UMW
R
IRF7240
P-Channel MOSFET
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min. Typ. Max. Units
-40
V
-0.025
V/°C
16
mΩ
27
-1.0
-3.0
V
17
S
-15
µA
-25
-100
nA
100
73
110
31
47
nC
17
26
52
490
ns
210
97
9250
580
pF
520
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -10.5A
VGS = -4.5V, I D = -8.4A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -10.5A
VDS = -32V, VGS = 0V
VDS = -32V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS = 20V
ID = -10.5A
VDS = -20V
VGS = -10V
VDD = -20V
ID = -1.0A
RG = 6.0Ω
VGS = -10V
VGS = 0V
VDS = -25V
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
-2.5
A
-43
43
75
-1.2
65
110
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, IF = -2.5A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board, t ≤ 5sec.
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2
UTD Semiconductor Co.,Limited
UMW
1000
R
IRF7240
P-Channel MOSFET
1000
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
100
10
1
0.1
-2.70V
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
100
10
-2.70V
1
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
TJ = 150 ° C
10
TJ = 25 ° C
0.1
V DS = -25V
20µs PULSE WIDTH
3.5
4.0
4.5
100
ID = -10.5A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
Fig 2. Typical Output Characteristics
100
3.0
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.01
2.5
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
-VDS , Drain-to-Source Voltage (V)
1
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
TOP
TOP
Fig 4. Normalized On-Resistance
Vs. Temperature
3
UTD Semiconductor Co.,Limited
UMW
R
IRF7240
P-Channel MOSFET
16000
-VGS , Gate-to-Source Voltage (V)
Coss = Cds + Cgd
12000
C, Capacitance(pF)
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Ciss
8000
4000
Coss
ID = -10.5A
VDS =-32V
VDS =-20V
VDS =-8V
16
12
8
4
Crss
0
0
1
10
0
100
20
-V DS, Drain-to-Source Voltage (V)
60
80
100
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
40
QG , Total Gate Charge (nC)
10
TJ = 25 ° C
1
0.1
0.4
0.8
1.0
10ms
1
0.1
1.2
-VSD ,Source-to-Drain Voltage (V)
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1ms
10
TA = 25 ° C
TJ = 150 ° C
Single Pulse
V GS = 0 V
0.6
100us
4
UTD Semiconductor Co.,Limited
UMW
R
IRF7240
P-Channel MOSFET
12
VDS
VGS
10
D.U.T.
RG
-ID , Drain Current (A)
RD
+
8
VDD
VGS
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
td(on)
tr
t d(off)
tf
VGS
0
25
50
75
100
125
10%
150
TC , Case Temperature ( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
0.1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
UTD Semiconductor Co.,Limited
IRF7240
P-Channel MOSFET
0.035
RDS (on) , Drain-to-Source On Resistance ( Ω)
RDS(on) , Drain-to -Source On Resistance (Ω)
UMW
R
0.030
0.025
0.020
0.015
ID = -10.5A
0.010
0.0
4.0
8.0
12.0
0.025
VGS = -4.5V
0.020
0.015
VGS = -10V
0.010
0
16.0
10
20
30
40
50
-I D , Drain Current (A)
-V GS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
12V
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
IG
Charge
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
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.2µF
Fig 14b. Gate Charge Test Circuit
6
UTD Semiconductor Co.,Limited
UMW
R
IRF7240
P-Channel MOSFET
200
3.0
2.5
Power (W)
-VGS(th) , Variace ( V )
160
ID = -250µA
120
80
2.0
40
0
1.5
-75
-50
-25
0
25
50
75
100
125
0.001
150
0.100
1.000
10.000
100.000
Time (sec)
T J , Temperature ( °C )
Fig 16. Typical Power Vs. Time
Fig 15. Typical Vgs(th) Variance Vs.
Juction Temperature
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0.010
7
UTD Semiconductor Co.,Limited
UMW
R
IRF7240
P-Channel MOSFET
SOP-8
Symbol
A
A1
A2
b
c
D
E
E1
e
L
θ
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Dimensions In Millimeters
Min
Max
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
3.800
4.000
5.800
6.200
1.270(BSC)
0.400
1.270
0°
8°
8
Dimensions In Inches
Min
Max
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
0.150
0.157
0.228
0.244
0.050(BSC)
0.016
0.050
0°
8°
UTD Semiconductor Co.,Limited
UMW
R
IRF7240
P-Channel MOSFET
Marking
Ordering information
Order code
Package
Baseqty
Deliverymode
UMW IRF7240TR
SOP-8
3000
Tape and reel
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9
UTD Semiconductor Co.,Limited
