UAD8C05L01

UMW R UAD8C05L01 Description The UAD8C05L01 includes back -to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharge (ESD). These robust diodes can safely absorb repetitive ESD strikes up to the maximum level specified in the IEC61000 -4-2 international standard without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present. Features Applications  IEC61000-4-2 ESD 15KV Air, 8KV contact compliance  SOD882 surface mount package  Working voltage: 5V  Low leakage current  Low operating and clamping voltages  Lead Free/RoHS compliant  Flammability rating UL 94V-0  Meets MSL level 1, per J-STD-020  Marking: B1  USB 3.0/USB 2.0  MHL/MIPI/MDDI  HDMI, Video Port, eSATA  Set Top Boxes, Game Consoles  Smart Phones  External Storage  Ultrabooks, Notebooks  Tablets, eReaders Maximum Ratings Rating Peak pulse current (tp=8/20 μs) ESD voltage ( Contact discharge ) Value Unit IPP 3 A V ESD ESD voltage ( Air discharge ) T STG ,T J Storage & operating temperature range www.umw-ic.com Symbol 4 ±8 kV ±15 -55~+150 ℃ 友台半导体有限公司 UMW R UAD8C05L01 Electrical Characteristics (TJ =25℃) Parameter Symbol Reverse stand - off voltage Condition Min. Typ. Max. Unit 5 V V RWM Reverse breakdown voltage 7 V V BR IBR=1mA Reverse leakage current IR V R=5V Clamping voltage (tp=8/20 μs) VC IPP=1A 13 V Clamping voltage (tp=8/20 μs) VC IPP=3A 20 V Off state junction capacitance CJ 0Vdc,f=1MHz 0.4 pF 1 μA Typical Characteristics Curves Figure 2. Insertion Loss (S21) I/O to GND 1 5 0.9 0 0.8 -5 0.7 Attenuation (dB) Capacitance (pF) Figure 1. Capacitance vs. Bias Voltage 0.6 0.5 0.4 0.3 -10 -15 -20 -25 0.2 -30 0.1 -35 0 1 0 2 3 4 -40 5 10 100 1000 Frequency (MHz) DC Bias (V) Figure 3. Pulse Waveform tr Peak value Ipp Waveform Parameters: tr=8µs td=20µs 90 80 TLP Current (A) % of Peak Power Current 110 100 Figure 4. Transmission Line Pulsing (TLP) Plot 70 60 50 40 td=t|PP/2 30 20 10 0 0 5 10 15 20 25 30 Time (μs) www.umw-ic.com 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -25 -20 -15 -10 -5 0 5 10 15 20 25 TLP Voltage (V) 2 友台半导体有限公司 UMW R UAD8C05L01 Recommended Soldering Conditions Reflow Soldering Critical Zone TL to TP tP TP Ramp-up TL tL Temperature TS max TS min Ramp-down tS Preheat 25 t 25℃ to Peak Time Recommended Conditions Profile Feature Pb-Free Assembly Average ramp-up rate (TL to TP) 3℃/second max. Preheat -Temperature Min (TS min) -Temperature Max (TS max) -Time (min to max) (tS) 150℃ 200℃ 60-180 seconds TS max to TL -Ramp-up Rate 3℃/second max. Time maintained above: -Temperature (TL) -Time (tL) 217℃ 60-150 seconds Peak Temperature (TP) 260℃ Time within 5℃ of actual Peak Temperature (tP) Ramp-down Rate 6℃/second max. Time 25℃ to Peak Temperature www.umw-ic.com 20-40 seconds 8 minutes max. 3 友台半导体有限公司 UMW R UAD8C05L01 Outline Drawing – SOD-882 D e h 2 1 L2 A1 C A BOTTOM VIEW L1 1 b E h L1 SYMB OL A A1 b C D e E L L1 h MILIMETER MIN NOM MAX 0.45 0.50 0.55 0 0.02 0.05 0.45 0.50 0.55 0.12 0.15 0.18 0.95 1.00 1.05 0.65BSC 0.55 0.60 0.65 0.20 0.25 0.30 0.05REF 0.07 0.12 0.17 Marking B1 Ordering information Order code Package Baseqt Deliverymode UMW UAD8C05L01 SOD-882 10000 Tapeandreel www.umw-ic.com 4 友台半导体有限公司