AO4409

UMW R AO4409 P-Channel MOSFET General Description D The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. G Features S VDS (V) = -30V ID = -15 A Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A ID IDM TA=70°C TA=25°C Power Dissipation Junction and Storage Temperature Range www.umw-ic.com ±20 V A -12.8 -80 3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -15 Pulsed Drain Current B A Maximum -30 W 2.1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL 1 Typ 26 50 14 Max 40 75 24 Units °C/W °C/W °C/W UTD Semiconductor Co.,Limited UMW R AO4409 P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage ID(ON) On state drain current RDS(ON) Static Drain-Source On-Resistance VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-15A Min -30 Conditions ID=-250µA, VGS=0V IS Ciss Coss Crss Rg Forward Transconductance VDS=-5V, ID=-15A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current 35 Output Capacitance Reverse Transfer Capacitance Gate resistance Qg Total Gate Charge Qg(4.5V) Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge ±100 nA -1.9 -2.7 6.2 7.5 V A mΩ 9.5 12 mΩ 50 -0.71 Input Capacitance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Units V µA TJ=55°C -1.4 80 Max -5 -25 VDS=-24V, VGS=0V VGS=-4.5V, ID=-10A gFS VSD Typ S -1 -5 V A 5270 pF 945 745 2 pF pF Ω 100 nC 51.5 nC VGS=-10V, VDS=-15V, RL=1Ω, RGEN=3Ω 14.5 23 14 16.5 76.5 nC nC ns ns ns ns IF=-15A, dI/dt=100A/µs IF=-15A, dI/dt=100A/µs 37.5 36.7 28 VGS=-10V, VDS=-15V, ID=-15A ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. www.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW R AO4409 P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 -10V 50 -6V -4.5V -3.5V 40 -4V -ID(A) -ID (A) 40 VDS=-5V 50 30 20 30 20 125°C VGS=-3V 10 10 0 0 1 2 3 4 25°C 0 5 1 1.5 -VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics 10 1.6 ID=-15A Normalized On-Resistance VGS=-4.5V 8 RDS(ON) (mΩ) 2 6 VGS=-10V 4 1.4 VGS=-10V VGS=-4.5V 1.2 1 2 0 5 10 15 20 0.8 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 20 ID=-15A 1.0E+01 16 VGS=0V 1.0E+00 12 -IS (A) RDS(ON) (mΩ) 75 125°C 8 25°C 125°C 1.0E-01 1.0E-02 1.0E-03 25°C 4 1.0E-04 1.0E-05 0 0 2 4 6 8 0.0 10 www.umw-ic.com 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 UTD Semiconductor Co.,Limited UMW R AO4409 P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8000 10 VDS=-15V ID=-15A 7000 6000 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 5000 4000 3000 Coss 2000 2 1000 Crss 0 0 0 20 40 60 80 100 -Qg (nC) Figure 7: Gate-Charge Characteristics 120 0 100.0 RDS(ON) limited 100µs Power (W) -ID (Amps) 10ms 1s TJ(Max)=150°C TA=25°C 60 40 DC 0 0.001 0.1 0.1 30 20 10s TJ(Max)=150°C TA=25°C 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 80 0.1s 1.0 10 100 10µs 1ms 10.0 5 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Z θJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 www.umw-ic.com 0.0001 0.001 0.01 1 10 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 100 1000 UTD Semiconductor Co.,Limited UMW R AO4409 P-Channel MOSFET PACKAGE OUTLINE DIMENSIONS SOP-8 Symbol A A1 A2 b c D E E1 e L θ www.umw-ic.com Dimensions In Millimeters Min Max 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 3.800 4.000 5.800 6.200 1.270(BSC) 0.400 1.270 0° 8° 5 Dimensions In Inches Min Max 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 0.150 0.157 0.228 0.244 0.050(BSC) 0.016 0.050 0° 8° UTD Semiconductor Co.,Limited UMW R AO4409 P-Channel MOSFET Marking Ordering information Order code Package Baseqty Deliverymode UMW AO4409 SOP-8 3000 Tape and reel www.umw-ic.com 6 UTD Semiconductor Co.,Limited