DRV8837DSGR-MS

DRV8837DSGR-MS

  • 厂商:

    MSKSEMI(美森科)

  • 封装:

    WSON-8-EP(2x2)

  • 描述:

    DRV8837DSGR-MS是一款H桥有刷电机驱动芯片,1.8V-11V电压供电,RDS(ON)电阻为650mΩ,1.6A峰值驱动输出,支持欠压锁定保护,低功耗休眠模式,PWM电流整流,限流,调向等,...

  • 数据手册
  • 价格&库存
DRV8837DSGR-MS 数据手册
DRV8837DSGR-MS Product specification DRV8837DSGR-MS GENERAL DESCRIPTION DRV8837DSGR-MS are low voltage DC IC.motor driver Internal integration 650mΩ(HS+LS typical) H bridge N MOS switch, whichcan support the 1.8V~11V input voltage range.The Peak current capacityis up to1.5A,suppo rt for ultra-low power sleep mode; built-inUVLO, Thermal Shutdown, OCP protectioncircuit. DRV8837DSGR-MS can be used in camera, toys and consumer products. FEATURES Support the input voltage range:  Built-in UVLO Protection Motor power: 1.8V~11V  Built-in Over Temperature Protection Control power supply: 1.8V~7V  Built-in Short Circuit Protection  LDMOS RDS(ON) (HS+LS) 650mΩ (typical)  Built-in Over Current Protection  Ultra-low power sleep mode  Built-in Charge Pump  45nA (typical) VM sleep mode current  WSON-8-EP(2*2) package  17nA (typical) VCC sleep mode current  Up to 1.5A Peak current output capacity  APPLICATION  Cameras  Toys  Consumer Products Reference News WSON-8-EP(2*2) Pin Configuration MARKING TFC* ** Order information P/N PKG QTY DRV8837DSGR-MS WSON-8-EP(2*2) 3000PCS Copyright© Msksemi Incorporated www.msksemi.com DRV8837DSGR-MS PIN FUNCTIONS Pin Name Function Power Supply for Driver. Connect a 0. 1μF bypass ceramic capacitor to GND. A bulk capacitor with at least 22μF capacitance on VM to GND is needed and helpful to 1 VM 2 OUT1 Motor Driver output 1 3 OUT2 Motor Driver output 2 4 GND Ground pin 5 IN2 PWM input2 6 IN1 PWM input1 stabilize VM voltage during motor operation. Chip Enable Input Pin. When this pin is in logic low, the device enters low-power 7 EN sleep mode. The device operates normally when this pin is logic high. The pin has 8 VCC Power Supply for Logic Input. Connect a 0. 1μF bypass ceramic capacitor to GND an internal pull-down resistor to GND. YPICAL APPILCATION Figure 1. Basic Application Circuit Copyright© Msksemi Incorporated www.msksemi.com DRV8837DSGR-MS ABSOLUTE MAXIMUM RATINGS Parameter Value Unit VM Voltage Range -0.3~ 11 V VCC, IN1, IN2, EN Voltages Range -0.3~7 V OUT1, OUT2 Voltage Range -0.3~Vin+0.3 V Storage Temperature Range -50~ 150 °C Junction Temperature -40~ 150 °C Package Thermal Resistance θ JA of DFN2x2-8 70 °C/W 90 °C/W Package Thermal Resistance θ JA of SOP8 ESD RATING Items Description Human Body Model for all pins VESD Value Unit ±2000 V JEDEC specification JS-001 RECOMMENDED OPERATING CONDITIONS Itms Descriptione Min Max Unit Voltage Range VM 1.8 11 V TJ Operating Junction Temperature Range -40 125 °C Copyright© Msksemi Incorporated www.msksemi.com DRV8837DSGR-MS ELECTRICAL CHARACTERISTICS (VM=5V, TA = 25°C, unless otherwise noted.) Parameter Symbol Conditions Min Typ Max Unit 11 V Input Power Supplies (VM and VCC) VM Voltage Range VM Supply Current IVM VM sleep mode supply current IVMQ VCC Voltage Range V VCC VCC Supply Current VCC sleep mode supply current 1.8 V VM IVCC IVCCQ VM=5V, VCC=3V No PWM 124 μA VM=5V, VCC=3V 50kHz PWM 0.53 mA VM=5V, VCC=3V Sleep Mode 45 1.8 95 nA 7 V VM=5V, VCC=3V No PWM 180 μA VM=5V, VCC=3V 50kHz PWM 0.32 mA VM=5V, VCC=3V Sleep Mode 17 35 nA PWM Control Logic Inputs (IN1, IN2 and EN) 0.25x VCC 0.4x VCC Input Logic Low Voltage Falling Threshold VIL_F Input Logic High Voltage Rising Threshold VIH_R 0.5x VCC Input logic Hysteresis VHYS 0.1x VCC Input Logic Low Current IIL Input Logic High Current IIH Input Pull Down Resistor RIN -5 V 0.6x VCC V V 5 μA 40 μA 100 kΩ 0.65 Ω Motor Driver Outputs ( OUT1 and OUT2) Output Switch On-Resistance (HS+LS) Output Switch Leakage Current RON ILEAK -200 200 nA Protection Function VCC UVLO Voltage UVLO Hysteresis VUVLO 1.7 V VUVLO_HY 100 mV 1.75 A Over Current Protection IOCP Over Current Retry Time TOCP_RT 1 ms Thermal Shutdown Threshold TSDN 160 °C Thermal Shutdown Hysteresis TSDN_HY 20 °C Copyright© Msksemi Incorporated 1.6 www.msksemi.com DRV8837DSGR-MS ELECTRICAL CHARACTERISTICS(continued) (VIN=5V, TA = 25°C, unless otherwise noted.) Parameter Symbol Conditions Min Typ Max Unit Output Enable time T1 180 265 ns Output Disable time T2 70 100 ns T3 140 215 ns IN2 high to OUT1 low IN1 high to OUT2 low T4 160 240 ns Output rise time T5 60 120 ns Output fall time T6 38 100 ns Delay Time IN1 low to OUT2 high IN2 low to OUT1 high Delay Time FUNCTIONAL BLOCK DIAGRAM Figure 2. DRV8837DSGR-MS Block Diagram Copyright© Msksemi Incorporated www.msksemi.com DRV8837DSGR-MS INPUT OUTPUT LOGIC EN IN1 IN2 OUT1 OUT2 Function 0 X X Z Z Coast 1 0 0 Z Z Coast 1 1 0 H L Forward 1 0 1 L H Reverse 1 1 1 L L Brake Copyright© Msksemi Incorporated www.msksemi.com DRV8837DSGR-MS PACKAGE INFORMATION WSON-8-EP(2*2) Unit: mm Symbol Dimensions In Millimeters Min Typ Max A 0.70 0.75 0.80 A1 0 0.02 A3 - b 0.19 Symbol Dimensions In Millimeters Min Typ Max L 0.30 0.35 0.40 0.05 K 0.20 - - 0.20 REF - aaa - 0.15 - 0.24 0.29 bbb - 0.10 - D 2.00 BSC ccc - 0.10 - E 2.00 BSC ddd - 0.05 - D2 1.25 1.30 1.35 eee - 0.08 - E2 0.75 0.80 0.85 fff - 0.10 - e 0.50 BSC Note: 1) All dimensions are in millimeters. Copyright© Msksemi Incorporated www.msksemi.com DRV8837DSGR-MS Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not handle applications that require extremely high levels of reliability, such as life-support have specifications that can systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. Copyright© Msksemi Incorporated www.msksemi.com
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