TCS9819-CM293

TCS9819 Ｕｌｔｒａ－ｓｍａｌｌ　Ｐａｃｋａｇｅ　Ｈｉｇｈ－ｐｒｅｃｉｓｉｏｎ　Ｖｏｌｔａｇｅ　Ｄｅｔｅｃｔｏｒ　Ｗｉｔｈ　ｄｅｌａｙ　Ｃｉｒｃｕｉｔ General Description Features TCS9819 Series is a series of high-precision voltage  Highly accuracy： ±1% detectors with a built-in delay time generator of fixed  Low power consumption：TYP 0.9uA (VDD=3V) time developed using NMOS process. Internal oscillator  Detect and counter timer can delay the release signal without voltage range ： 1.0V~6.5V in increments external parts. Detect voltage is extremely accurate with  Operating voltage range：0.7V~7.0V minimal temperature drift. NMOS output configurations  Detect voltage temperature characteristics： are available. TYP±100ppm/℃  Output configuration： NMOS Typical Application Package  Power monitor for portable equipment such as  3-pin SOT23、SOT23-3 notebook computers, digital still cameras, PDA,  4-pin DFN1.2*1.6-4 and cellular phones  5-pin SOT23-5 Constant voltage power monitor for cameras, video  6-pin DFN2*2-6  equipment and communication devices.  Power monitor for microcomputers and reset for CPUs.  System battery life and charge voltage monitors Typical Application Circuit 100K VDD DS VOUT VSS Ver.1.0 May.31.2019 page 1 0.1V TCS9819 Ｕｌｔｒａ－ｓｍａｌｌ　Ｐａｃｋａｇｅ　Ｈｉｇｈ－ｐｒｅｃｉｓｉｏｎ　Ｖｏｌｔａｇｅ　Ｄｅｔｅｃｔｏｒ　Ｗｉｔｈ　ｄｅｌａｙ　Ｃｉｒｃｕｉｔ Selection Guide product series Detect voltage Delay time（DS low） TCS9819-CM263 2.63V 50ms SOT23 2.93V 50ms SOT23-3 2.93V 50ms SOT23 TCS9819-DD293 2.93V 50ms DFN1.2*1.6-4 TCS9819-E308 3.08V 50ms SOT23-5 TCS9819-DF14 1.4V 20ms DFN2*2-6 TCS9819-E22 2.2V 50ms SOT23-5 TCS9819-E40 4.0V 50ms SOT23-5 TCS9819-E263 2.63V 50ms SOT23-5 TCS9819-E293 2.93V 50ms SOT23-5 TCS9819-C38 3.8V 50ms SOT23-3 TCS9819B-C293 TCS9819-CM293 Ver.1.0 May.31.2019 page 2 Package TCS9819 Ｕｌｔｒａ－ｓｍａｌｌ　Ｐａｃｋａｇｅ　Ｈｉｇｈ－ｐｒｅｃｉｓｉｏｎ　Ｖｏｌｔａｇｅ　Ｄｅｔｅｃｔｏｒ　Ｗｉｔｈ　ｄｅｌａｙ　Ｃｉｒｃｕｉｔ Pin Configuration VDD 3 VDD 1 4 VDD VOUT 5 4 6 VDD NC 2 5 NC 3 4 VSS 3 VSS VOUT 2 1 2 1 2 3 VSS VOUT DS VSS NC SOT23/SOT23-3 VOUT 1 NC DFN1.2*1.6-4 NC SOT23-5 DFN2*2-6 Pin Assignment PIN Number Pin Name SOT23/SOT23-3 DFN1.2*1.6-4 SOT23-5 DFN2*2-6 1 3 2 4 VSS 2 2 4 1 VOUT 3 1 5 6 VDD - - 1 - DS - 4 3 2，3，5 NC Block Diagram Ver.1.0 May.31.2019 page 3 Function Ground Output Voltage Input Voltage ON/OFF switch for delay time TCS9819 Ｕｌｔｒａ－ｓｍａｌｌ　Ｐａｃｋａｇｅ　Ｈｉｇｈ－ｐｒｅｃｉｓｉｏｎ　Ｖｏｌｔａｇｅ　Ｄｅｔｅｃｔｏｒ　Ｗｉｔｈ　ｄｅｌａｙ　Ｃｉｒｃｕｉｔ Absolute Maximum Ratings Parameter Symbal Ratings Units VDD Input Voltage VDD 8 V Output Current IOUT 50 mA VOUT Vss-0.3~ VDD +0.3 V Output Voltage NMOS Continuous Total Power Dissipation Thermal resistance(Junction to air) SOT23-3 0.5 SOT23 0.4 DFN1.2*1.6-4 Pd 0.42 SOT23-5 0.6 DFN2*2-6 1.3 SOT23-3 250 SOT23 330 DFN1.2*1.6-4 θJA 300 SOT23-5 200 DFN2*2-6 95 W ℃/W Operating Ambient Temperature TOpr -40~+85 ℃ Storage Temperature Tstg -55~+150 ℃ Maximum junction temperature TJ -40~+150 ℃ Soldering temperature and time Tsolder 260℃, 10s MM 400 V HBM 4000 V ESD Ver.1.0 May.31.2019 page 4 TCS9819 Ｕｌｔｒａ－ｓｍａｌｌ　Ｐａｃｋａｇｅ　Ｈｉｇｈ－ｐｒｅｃｉｓｉｏｎ　Ｖｏｌｔａｇｅ　Ｄｅｔｅｃｔｏｒ　Ｗｉｔｈ　ｄｅｌａｙ　Ｃｉｒｃｕｉｔ Electrical Characteristics (-VDET(S)=1.0V to 6.5V±1% ,Ta=25OC , unless otherwise noted) Parameter Detect Symbol Conditions -VDET（S） -VDET Voltage Hysteresis Range Supply Current1 ×0.99 VHYS 0.03 ISS1 (below 2.5V) Current2 VDD=5V ISS2 (2.5V-4.5V) VDD=7V (4.5V-6.5V) Output IOUT VDS=0.5V Current N-ch VDD=0.7V Operating voltage VDD A /C Series VDD=-VDET+1V B Series DS low Td1 Delay time Td2 Temperature characteristics   VDET Ta  (  VDET) VDD=-VDET+1V DS high ∆Ta= -40℃ ~ 85℃ Typ -VDET(S) Max. -VDET(S) ×1.01 Units Test circuit V 1 0.06 0.1 V 0.6 1.0 uA 2 - 0.9 1.5 - 1.4 2.8 uA 2 - 1.8 3.6 0.01 0.16 -- mA 3 0.7 - 7 V 1 32.5 50 72.5 ms 1 13 20 27 ms 1 25 50 75 us 4 - ±100 ±350 ppm/℃ 1 VDD=2V VDD=3V Supply Min. Note： 1、-VDET(S) ：Specified Detection Voltage value 2、-VDET ：Actual Detection Voltage value 3、Release Voltage：+VDET=-VDET+VHYS Ver.1.0 May.31.2019 page 5 TCS9819 Ｕｌｔｒａ－ｓｍａｌｌ　Ｐａｃｋａｇｅ　Ｈｉｇｈ－ｐｒｅｃｉｓｉｏｎ　Ｖｏｌｔａｇｅ　Ｄｅｔｅｃｔｏｒ　Ｗｉｔｈ　ｄｅｌａｙ　Ｃｉｒｃｕｉｔ Test Circuits: 1. 2. 3. 4. Functional Description 1. Basic Operation: NMOS Output (Active Low) 1-1. When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch transistor is OFF to provide VDD (high) at the output. Since the Nch transistor N1 in Figure 1 is OFF, the comparator input voltage is (RB  RC )VDD . R A  RB  R C 1-2. When the VDD goes below +VDET, the output provides the VDD level, as long as VDD remains above the detection voltage (–VDET). When the VDD falls below –VDET (point A in Figure 2), the Nch transistor becomes ON, the VSS level appears at the output. At this time the Nch transistor N1 in Figure 1 becomes ON, the comparator input voltage is changed to RB  VDD . R A  RB 1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to VDD when Ver.1.0 May.31.2019 page 6 TCS9819 Ｕｌｔｒａ－ｓｍａｌｌ　Ｐａｃｋａｇｅ　Ｈｉｇｈ－ｐｒｅｃｉｓｉｏｎ　Ｖｏｌｔａｇｅ　Ｄｅｔｅｃｔｏｒ　Ｗｉｔｈ　ｄｅｌａｙ　Ｃｉｒｃｕｉｔ the output is pulled up to VDD. 1-4. The VSS level appears when VDD rises above the minimum operating voltage. The VSS level still appears even when VDD surpasses the –VDET, as long as it does not exceed the release voltage +VDET. 1-5. When VDD rises above +VDET (point B in Figure 2), the Nch transistor becomes OFF to provide VDD at the output. The VDD at the OUT pin is delayed for Td due to the delay circuit. 2. Delay Circuit 2-1. Delay Time The delay circuit delays the output signal from the time at which the power voltage (VDD) exceeds the release voltage (+VDET) when VDD is turned on. The output signal is not delayed when the VDD goes below the detection voltage (–VDET). (Refer to Figure 2.) The delay time (tD) is a fixed value that is determined by a built-in oscillation circuit and counter. 2-2. DS Pin (ON/OFF Switch Pin for Delay Time) The DS pin should be connected to Low or High. When the DS pin is High, the output delay time becomes short since the output signal is taken from the middle of counter circuit (Refer to Figure 3). Ver.1.0 May.31.2019 page 7 TCS9819 Ｕｌｔｒａ－ｓｍａｌｌ　Ｐａｃｋａｇｅ　Ｈｉｇｈ－ｐｒｅｃｉｓｉｏｎ　Ｖｏｌｔａｇｅ　Ｄｅｔｅｃｔｏｒ　Ｗｉｔｈ　ｄｅｌａｙ　Ｃｉｒｃｕｉｔ Directions for use 1、 Please use this IC within the stated maximum ratings. Operation beyond these limits may cause degrading or permanent damage to the device. 2、 When a resistor is connected between the VDD pin and the input with NMOS output configurations, oscillation may occur as a result of voltage drops at RIN if load current(IOUT) exists.(refer to the Oscillation Description(1) below) 3、 When a resistor is connected between the VDD pin and the input with NMOS output configurations, oscillation may occur as a result of through current at the time of voltage release even if load current(IOUT) does not exist. (refer to the Oscillation Description(2) below) 4、 With a resistor connected between the VDD and the input, detect and release voltage will rise as a result of the IC’s 5、 supply current flowing through the VDD pin. 6、 In order to stabilize the IC’s operations, please ensure that VDD pin’s input frequency’s rise and fall times are more than several u Sec/V. Oscillation Description 1、 Output current oscillation with the NMOS output configuration When the voltage applied at IN rises, release operations commence and the detector’s output voltage increase. Load current(IOUT) will flow at RL. Because a voltage drop(RIN*IOUT) is produces at the RIN resistor, located between the input(IN) and the VDD pin. The load current will flow via the IC’s pin. The voltage drop will also lead to a fall in the voltage level at the VDD pin. When the VDD pin voltage level falls below the detect voltage level, detect operations will commence. Fllowing detect operations, load current flow will cease and since voltage drop at RIN will disapper, the voltage level at the VDD pin will rise and release operations will begin over again. Oscillation may occur with this “release-detect-release” repetition. Further, this condition will also appear via means of a similar mechanism during detect operations. 2、 Oscillation as a result of through current Since the TCS9819 series are NMOS IC’s, through current will flow when the IC’s internal circuit switching operates(during release and detect operations). Consequently, oscillation is liable to occur as a result of drops in voltage at the through current’s resistor (RIN) during release voltage operations.(refer to diagram 2) since hysteresis exists during detect operations, oscillation is unlikely to occur. Ver.1.0 May.31.2019 page 8 TCS9819 Ｕｌｔｒａ－ｓｍａｌｌ　Ｐａｃｋａｇｅ　Ｈｉｇｈ－ｐｒｅｃｉｓｉｏｎ　Ｖｏｌｔａｇｅ　Ｄｅｔｅｃｔｏｒ　Ｗｉｔｈ　ｄｅｌａｙ　Ｃｉｒｃｕｉｔ Type Characteristics 1、Supply current vs. Ambient temperature VDD=5V,-VDET=2.63V VDD=2.5V,-VDET=2.63V Iss VS.TEMP 1.2 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 1 Iss(uA) Iss(uA) Iss VS.TEMP 0.8 0.6 0.4 0.2 -16 10 20 30 40 50 60 70 80 0 -16 10 90 100 110 120 20 30 40 TEMP(℃) VDET(V) Iss(uA) 2 1.5 1 0.5 0 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 2.72 2.7 2.68 2.66 2.64 2.62 2.6 2.58 2.56 2.54 -16 10 Iout(N) VS. VDD 12 T=-15℃ Iout(mA) 10 T=23℃ T=85℃ 6 4 2 0 0.5 0.7 1 1.2 20 30 40 50 60 70 TEMP(℃) 4、 Output current vs. Input voltage N-ch VDS=0.5V,-VDET=2.63V 0.2 90 100 110 120 +VDET -VDET VDD(V) 8 80 VDET VS TEMP 2.5 1 70 3、Detect, Release voltage vs. Ambient temperature -VDET=2.63V Iss VS VDD 0.5 60 TEMP(℃) 2、Supply current vs. Input voltage -VDET=2.63V （T=25℃） 0 50 1.7 2.2 2.5 VDD(V) Ver.1.0 May.31.2019 page 9 80 90 100 110 120 TCS9819 Ｕｌｔｒａ－ｓｍａｌｌ　Ｐａｃｋａｇｅ　Ｈｉｇｈ－ｐｒｅｃｉｓｉｏｎ　Ｖｏｌｔａｇｅ　Ｄｅｔｅｃｔｏｒ　Ｗｉｔｈ　ｄｅｌａｙ　Ｃｉｒｃｕｉｔ Package Information  Package Type：SOT23-3 DIM Millimeters Inches Min Max Min Max A 1.05 1.45 0.0413 0.0571 A1 0 0.15 0.0000 0.0059 A2 0.9 1.3 0.0354 0.0512 A3 0.6 0.7 0.0236 0.0276 b 0.25 0.5 0.0098 0.0197 c 0.1 0.25 0.0039 0.0098 D 2.8 3.1 0.1102 0.1220 E 2.6 3.1 0.1023 0.1220 E1 1.5 1.8 0.0591 0.0709 e L 0.95(TYP) 0.25 L1 θ c1 0.0374(TYP) 0.6 0.0098 0.59(TYP) 0 0.0236 0.0232(TYP) 8° 0.2(TYP) Ver.1.0 May.31.2019 page 10 0.0000 8° 0.0079(TYP) TCS9819 Ｕｌｔｒａ－ｓｍａｌｌ　Ｐａｃｋａｇｅ　Ｈｉｇｈ－ｐｒｅｃｉｓｉｏｎ　Ｖｏｌｔａｇｅ　Ｄｅｔｅｃｔｏｒ　Ｗｉｔｈ　ｄｅｌａｙ　Ｃｉｒｃｕｉｔ  Package Type：SOT23 DIM Millimeters Inches Min Max Min Max A 0.9 1.15 0.0354 0.0453 A1 0 0.14 0.0000 0.0055 A2 0.9 1.05 0.0354 0.0413 b 0.28 0.52 0.0110 0.0205 c 0.07 0.23 0.0028 0.0091 D 2.8 3.0 0.1102 0.1181 e1 1.8 2.0 0.0709 0.0787 E 1.2 1.4 0.0472 0.0551 E1 2.2 2.6 0.0866 0.1024 e 0.95(TYP) 0.0374(TYP) L 0.55(TYP) 0.0217(TYP) L1 0.25 0.55 0.0098 0.0217 θ 0 8° 0.0000 8° c1 0.25(TYP) Ver.1.0 May.31.2019 page 11 0.0098(TYP) TCS9819 Ｕｌｔｒａ－ｓｍａｌｌ　Ｐａｃｋａｇｅ　Ｈｉｇｈ－ｐｒｅｃｉｓｉｏｎ　Ｖｏｌｔａｇｅ　Ｄｅｔｅｃｔｏｒ　Ｗｉｔｈ　ｄｅｌａｙ　Ｃｉｒｃｕｉｔ  Package Type：DFN1.2*1.6-4 DIM Millimeters Inches Min Max Min Max A 0.5 0.6 0.0197 0.0236 A1 0 0.05 0 0.0020 A3 0.152 (TYP) 0.006 (TYP) D 1.5 1.7 0.0591 0.0669 E 1.1 1.3 0.0433 0.0512 D1 0.56 0.76 0.0221 0.0299 E1 0.7 0.9 0.0276 0.0355 b 0.25 0.35 0.0098 0.0138 b1 0.175 0.275 0.0069 0.0108 e L k 0.6 (TYP) 0.15 0.0236 (TYP) 0.25 0.2 (TYP) Ver.1.0 May.31.2019 page 12 0.0059 0.0098 0.0079 (TYP) TCS9819 Ｕｌｔｒａ－ｓｍａｌｌ　Ｐａｃｋａｇｅ　Ｈｉｇｈ－ｐｒｅｃｉｓｉｏｎ　Ｖｏｌｔａｇｅ　Ｄｅｔｅｃｔｏｒ　Ｗｉｔｈ　ｄｅｌａｙ　Ｃｉｒｃｕｉｔ  Package Type：SOT23-5 DIM Millimeters Inches Min Max Min Max A 1.05 1.45 0.0413 0.0571 A1 0 0.15 0.0000 0.0059 A2 0.9 1.3 0.0354 0.0512 A3 0.6 0.7 0.0236 0.0276 b 0.25 0.5 0.0098 0.0197 c 0.1 0.23 0.0039 0.0091 D 2.82 3.05 0.1110 0.1201 e1 1.9(TYP) 0.0748(TYP) E 2.6 3.05 0.1024 0.1201 E1 1.5 1.75 0.0512 0.0689 e L 0.95(TYP) 0.25 L1 θ c1 0.0374(TYP) 0.6 0.0098 0.59(TYP) 0 0.0236 0.0232(TYP) 8° 0.2(TYP) Ver.1.0 May.31.2019 page 13 0.0000 8° 0.0079(TYP) TCS9819 Ｕｌｔｒａ－ｓｍａｌｌ　Ｐａｃｋａｇｅ　Ｈｉｇｈ－ｐｒｅｃｉｓｉｏｎ　Ｖｏｌｔａｇｅ　Ｄｅｔｅｃｔｏｒ　Ｗｉｔｈ　ｄｅｌａｙ　Ｃｉｒｃｕｉｔ  Package Type：DFN2*2-6 DIM Millimeters Inches Min Max Min Max A 0.7 0.8 0.0276 0.0315 A1 0 0.05 0 0.002 A2 0.203(TYP) 0.008(TYP) b 0.18 0.4 0.0071 0.0157 D 1.9 2.1 0.0748 0.0827 E 1.9 2.1 0.0748 0.0827 E1 0.5 0.9 0.0197 0.0354 e 0.65(TYP) 0.0256(TYP) L 0.25 0.426 0.0098 0.0168 K 0.2 一 0.0079 一 D1 1 1.45 0.0393 0.0571 Ver.1.0 May.31.2019 page 14