SP85N02AGHTF

SP85N02AGHTF 85V N-Channel Power MOSFET Product Summary V(BR)DSS RDS(on)TYP ID 85V 1.7mΩ@10V 280A Feature Applications  Fast Switching  Power switching application  Low Gate Charge and Rdson  DC-DC Converter  Advanced Split Gate Trench Technology  Power Management  100% Single Pulse avalanche energy Test Package Circuit diagram TO-247(1:G 2:D 3:S) Marking SP85N02AGHTF ** Ver-1.3 Order Information Device Package Unit/Tube SP85N02AGHTF TO-247 30 : Product code : Week code Siliup Semiconductor Technology Co. Ltd. www.siliup.com 1 SP85N02AGHTF 85V N-Channel Power MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage VDS 85 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Tc=25℃) ID 280 A Continuous Drain Current (Tc=100℃) ID 190 A Pulsed Drain Current IDM 1120 A Single Pulse Avalanche Energy EAS 1650 mJ Power Dissipation (Tc=25℃) PD 270 W Thermal Resistance Junction-to-Case RθJC 0.46 ℃/W Storage Temperature Range TSTG -55 to 150 ℃ TJ -55 to 150 ℃ 1 Operating Junction Temperature Range Electrical characteristics (Ta=25℃, unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit V Static Characteristics BVDSS ID = 250μA, VGS = 0V 85 - - Drain Cut-Off Current IDSS VDS = 68V, VGS = 0V - - 1 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2 2.8 4 V Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 20A - 1.7 2.5 mΩ - 9100 - - 4700 - Drain-Source Breakdown Voltage μA Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 190 - Total Gate Charge Qg - 143 - Gate-Source Charge Qgs - 51 - Gate-Drain Charge Qgd - 25 - td(on) - 27 - - 75 - - 86 - - 35 - - - 1.2 V - - 280 A - 115 - nS - 320 - nC VDS =40V, VGS = 0V, f = 1.0MHz VDS=40V , VGS=10V , ID=165A pF nC Switching Characteristics Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VGS = 10V, VDS = 40V, RG = 1.6Ω ID=165A , tf Fall Time nS Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Maximum Body-Diode Continuous Current Reverse Recovery Time VSD Reverse Recovery Charge Qrr IS = 1A, VGS = 0V IS Trr IS=155A, di/dt=100A/us, TJ=25℃ Note : 1. The test condition is VDD=45V,VGS=10V,L=0.5mH,RG=25Ω Ver-1.3 Siliup Semiconductor Technology Co. Ltd. www.siliup.com 2 SP85N02AGHTF 85V N-Channel Power MOSFET Typical Characteristics Ver-1.3 Siliup Semiconductor Technology Co. Ltd. www.siliup.com 3 SP85N02AGHTF 85V N-Channel Power MOSFET Ver-1.3 Siliup Semiconductor Technology Co. Ltd. www.siliup.com 4 SP85N02AGHTF 85V N-Channel Power MOSFET TO-247 Package Information Symbol A A1 b b1 b2 c c1 D E1 E2 L L1 L2 Φ e H h Ver-1.3 Dimensions In Millimeters Min. Max. 4.850 5.150 2.200 2.600 1.000 1.400 2.800 3.200 1.800 2.200 0.500 0.700 1.900 2.100 15.450 15.750 3.500 REF. 3.600 REF. 40.900 41.300 24.800 25.100 20.300 20.600 7.100 7.300 5.450 TYP. 5.980 REF. 0.000 0.300 Dimensions In Inches Min. Max. 0.191 0.200 0.087 0.102 0.039 0.055 0.110 0.126 0.071 0.087 0.020 0.028 0.075 0.083 0.608 0.620 0.138 REF. 0.142 REF. 1.610 1.626 0.976 0.988 0.799 0.811 0.280 0.287 0.215 TYP. 0.235 REF. 0.000 0.012 Siliup Semiconductor Technology Co. Ltd. www.siliup.com 5