NVMFS5C673NLWFAFT1G-HXY

HXY NVMFS5C673NLWFAFT1G ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Description D The NVMFS5C673NLWFAFT1G uses advanced trench D D D technology to provide excellent R DS(ON), low gate charge S and operation with gate voltages as low as 4.5V. This S S G device is suitable for use as a Battery protection or G S in other Switching application. S "S Pin 1 General Features DFN5X6-8L (TDSON-8-EP(5.1x5.9)) VDS = 60V ID = 65A D RDS(ON) < 11mΩ V GS=10V ! " Application G ! Battery protection ! " " " ! S N-Channel MOSFET Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Brand Qty(PCS) NVMFS5C673NLWFAFT1G DFN5X6-8L (TDSON-8-EP(5.1x5.9)) HXY MOSFET 5000 Absolute Maximum Ratings (TC=25°C unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 65 A ID@TC=70℃ Continuous Drain Current, VGS @ 10V 49 A IDM Pulsed Drain Current2 180 A EAS Single Pulse Avalanche Energy3 56 mJ PD@TC=25℃ Total Power Dissipation4 89 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY NVMFS5C673NLWFAFT1G ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Electrical Characteristics (TJ=25°C unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 - - V Zero Gate Voltage Drain Current VDS=60V, VGS=0V, - - 1.0 μA Gate to Body Leakage Current VDS=0V, VGS= ±20V - - ±100 nA Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 1.6 2.5 V Static Drain-Source on-Resistance VGS=10V, ID=20A - 8 11 note3 VGS=4.5V, ID=10A - 14 20 - 930 - pF - 370 - pF - 20 - pF - 19 - nC - 4.8 - nC - 4.5 - nC - 4.9 - ns - 31 - ns - 23 - ns Turn-off Fall Time - 8.7 - ns Maximum Continuous Drain to Source Diode Forward Current - - 65 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 240 A VSD Drain to Source Diode Forward Voltage - - 1.4 V - 34 - ns - 14 - nC V (BR)DSS IDSS IGSS V GS(th) RDS(on) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Qgs Total Gate Charge Gate-Source Charge Q gd Gate-Drain(“Miller”) Charge td(on) tr Turn-on Delay Time td(off) tf Turn-off Delay Time IS Turn-on Rise Time trr Body Diode Reverse Recovery Time Q rr Body Diode Reverse Recovery Charge VDS=25V, VGS=0V, f=1.0MHz VDS=30V, ID=20A, VGS=10V V DD=30V, ID=20A, RG=1.6Ω, VGS=10V VGS=0V, IS=30A TJ=25℃, IF=20A,dI/dt=100A/μs mΩ Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃, VDD=30V, VG=10V, RG=25Ω, L=0.5mH, IAS=12A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY NVMFS5C673NLWFAFT1G ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 40 ID (A) 10V ID (A) 30 4.5V 25 4V 30 20 TJ=125℃ 15 20 VGS=3V 25℃ 10 10 5 VDS(V) 0 0 1 2 3 4 5 0 0.8 1.6 2.4 3.2 4.0 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current 18 VGS(V) 0 IS(A) RDS(ON) (mΩ) 1.0E+01 15 1.0E+00 VGS=4.5V 12 1.0E-01 9 1.0E-02 125℃ VGS=10V 6 1.0E-03 3 1.0E-04 ID(A) 0 0 10 20 30 40 Figure 5: Gate Charge Characteristics 10 8 1.0E-05 0.0 0.2 0.4 TJ=25℃ VSD(V) 0.6 0.8 1.0 Figure 6: Capacitance Characteristics VGS(V) C(pF) VDS=30V ID=30A 104 Ciss 6 4 103 Coss 102 0 Crss 2 0 Qg(nC) 0 10 20 30 40 50 Shenzhen HuaXuanYang Electronics CO.,LTD 60 VDS(V) 10 20 30 40 50 www.hxymos.com HXY NVMFS5C673NLWFAFT1G ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature RDS(on) VBR(DSS) 2.5 1.3 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 200 Figure 9: Maximum Safe Operating Area Tj (℃) -50 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature ID(A) 1000 0.5 -100 ID(A) 72 Limited by RDS(on) 60 10μs 100 48 100μs 1ms 10 36 10ms 100ms 24 DC TC=25℃ Single pulse 1 0.1 0.1 12 VDS (V) 10 1 0 100 0 25 50 Tc (℃) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 ZthJ-C(℃/W) 100 10-1 PDM D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak T J=PDM*ZthJC+TC TP(s) 10-2 10-3 -6 10 10-5 10-4 10-3 10-2 10-1 Shenzhen HuaXuanYang Electronics CO.,LTD 100 101 www.hxymos.com HXY NVMFS5C673NLWFAFT1G ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG DFN5X6-8L(TDSON-8-EP(5.1x5.9)) Package Information SYMBOL A A1 D D1 B B1 C C1 C2 Ɵ1 L1 L2 L3 H MM MIN 4.95 4.82 5.98 5.67 0.9 3.95 0.35 8° 0.63 1.2 3.415 0.24 NOM 5 4.9 6 5.75 0.95 0.254REF 4 0.4 1.27TYP 10° 0.64 1.3 3.42 0.25 Shenzhen HuaXuanYang Electronics CO.,LTD INCH MAX 5.05 4.98 6.02 5.83 1 MIN 0.195 0.190 0.235 0.223 0.035 4.05 0.45 0.156 0.014 12° 0.65 1.4 3.425 0.26 8° 0.025 0.047 0.134 0.009 NOM 0.197 0.193 0.236 0.226 0.037 0.010REF 0.157 0.016 0.5TYP 10° 0.025 0.051 0.135 0.010 MAX 0.199 0.196 0.237 0.230 0.039 0.159 0.018 12° 0.026 0.055 0.135 0.010 www.hxymos.com HXY NVMFS5C673NLWFAFT1G ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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