MKI50-06A7

MKI 50-06 A7 IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA 13 T1 T5 D1 9 10 16 T2 D2 3 12 4 17 11 T6 D6 14 D5 IC25 = 72 A = 600 V VCES VCE(sat) typ. = 1.9 V Preliminary Data 1 2 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ± 20 72 50 ICM = 100 VCEK ≤ VCES 10 225 V V A A A µs Features • NPT IGBT technology • low saturation voltage • low switching losses • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive TC = 25°C Advantages W • space savings • reduced protection circuits • package designed for wave soldering Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.9 2.2 4.5 0.7 200 50 60 300 30 2.3 1.7 2800 120 2.4 6.5 0.6 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.55 K/W Typical Applications • motor control - DC motor armature winding - DC motor excitation winding - synchronous motor excitation winding • supply of transformer primary winding - power supplies - welding - X-ray - UPS - battery charger VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 50 A VGE = ±15 V; RG = 22 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 50 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 1-4 225 MKI 50-06 A7 Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 72 45 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Module Symbol TVJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Conditions IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 1.6 1.3 25 90 1.8 V V A ns 1.19 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.82 V; R0 = 28 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 0.89 V; R0 = 8 mΩ Thermal Response Conditions Maximum Ratings -40...+150 -40...+125 °C °C V~ Nm IGBT (typ.) Cth1 = 0.201 J/K; Rth1 = 0.42 K/W Cth2 = 1.252 J/K; Rth2 = 0.131 K/W Free Wheeling Diode (typ.) Cth1 = 0.116 J/K; Rth1 = 0.973 K/W Cth2 = 0.88 J/K; Rth2 = 0.277 K/W IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M5) Conditions 2500 2.7 - 3.3 Characteristic Values min. typ. max. 5 mΩ mm mm 0.02 180 K/W g Creepage distance on surface Strike distance in air with heatsink compound 6 6 Dimensions in mm (1 mm = 0.0394") © 2002 IXYS All rights reserved 2-4 MKI 50-06 A7 150 A 120 VGE= 17V 15V 13V 150 A 120 90 11V VGE= 17V 15V 13V IC IC 90 60 30 0 0 1 2 3 4 VCE 5 V 9V TVJ = 25°C 11V 60 30 0 9V TVJ = 125°C 6 0 1 2 3 4 VCE 5V 6 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 150 A 120 IC 90 A 75 IF 60 90 45 60 TVJ = 125°C TVJ = 125°C TVJ = 25°C 30 TVJ = 25°C 30 0 4 6 8 10 12 VGE VCE = 20V 15 0 0.0 14 V 16 0.5 1.0 VF 1.5 V 2.0 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 50 40 A IRM 20 V 150 120 ns 90 60 TVJ = 125°C VR = 300V IF = 30A MWI5006A7 15 VGE trr trr 30 10 20 5 VCE = 300V IC = 50A 10 IRM 30 0 0 0 40 80 120 QG nC 0 160 0 200 400 600 800 s A/µ -di/dt 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode © 2002 IXYS All rights reserved 3-4 MKI 50-06 A7 10.0 mJ Eon td(on) 100 ns 75 t Eoff 4 mJ Eoff 400 ns 300 t td(off) 7.5 tr 3 5.0 VCE = 300V VGE = ±15V RG = 22Ω TVJ = 125°C 50 2 VCE = 300V VGE = ±15V RG = 22Ω TVJ = 125°C 200 2.5 Eon 25 1 100 0.0 0 40 80 IC A 0 120 0 0 40 80 IC tf A 0 120 Fig. 7 Typ. turn on energy and switching times versus collector current 4 mJ Eon Eon 80 ns 60 tr VCE = 300V VGE = ±15V IC = 50A TVJ = 125°C Fig. 8 Typ. turn off energy and switching times versus collector current 3 mJ t Eoff Eoff 600 ns td(on) 3 2 td(off) VCE = 300V VGE = ±15V IC = 50A TVJ = 125°C 400 t 2 40 1 200 1 0 10 20 30 40 RG 20 50 Ω 60 0 0 10 20 30 40 RG 0 50 Ω 60 tf Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 A ICM 10 K/W ZthJC 1 Fig.10 Typ. turn off energy and switching times versus gate resistor diode IGBT 90 0.1 60 0.01 30 RG = 22 Ω TVJ = 125°C single pulse 0.001 0.0001 0.00001 0.0001 0.001 MWI5006A7 0 0 100 200 300 400 500 600 VCE 700 V 0.01 0.1 t 1 s 10 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance © 2002 IXYS All rights reserved 4-4