SAEN15NCB

SAEN15NCB SAEN15NCB Normal Capacitance ESD Protection Diode 1 Features 3 Description • IEC 61000-4-2 Level 4 ESD Protection The SAEN15NCB is designed to protect voltage – ±30-kV Contact Discharge sensitive components from damage or latch-up due to – ±30-kV Air Gap Discharge ESD. Excellent clamping capability, low leakage, and • Peak Reverse Working Voltage: 5.0V (Maximum) fast response time provide best in class protection on • IO Capacitance: designs that are exposed to ESD for board level. – 15 pF (typical) Because of its small size and bi-directional design, it DC Breakdown Voltage: 5.7V to 6.5V (Minimum to is ideal for use in cellular phones, MP3 players, and Maximum) portable applications that require audio line protection. • Low Leakage Current: 1μA (Maximum) The SAEN15NCB is rated to dissipate ESD strikes at • Industrial Temperature Range: –55°C to +150°C the maximum level specified in the IEC 61000-4-2 • Package DFN0603-2L international standard (Level 4). • 4 Pin Configuration and Bottom View 2 Applications • End Equipment Pin 2 Pin 1 – TWS and Smart Wearable – TV and Monitors – Cellular handsets and accessories – Portable electronics – Communication systems – Computers and peripherals DFN0603-2L 5 Device Information PART NUMBER MARKING SAEN15NCB 6 Absolute maximum Ratings @25℃ RATING C5 PACKAGE BODY SIZE (NOM) DFN0603-2L 0.60 mm x 0.30mm SYMBOL VALUE UNITS Peak Pulse Power (tp=8/20μs) PPP 100 W Peak Pulse Current (tp=8/20μs) IPP 8 A Operating Temperature TJ -55 to 125 ℃ Storage Temperature TSTG -55 to 150 ℃ ESD Protection-Contact Discharge VESD ±30 kV ESD Protection-Air Discharge VESD ±30 kV Copyright © 2017, Singusemi Ver 1.5 www.Singusemi.com 1 SAEN15NCB 7 Electronics Parameter Definiations Symbol VRWM I Parameter Peak Reverse Working Voltage IR IPP Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT VC VBR VRWM IT Test Current IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP PPP Peak Pulse Power CJ Junction Capacitance V IR IR IT VRWM VBR VC IPP 8 Electrical characteristics (@25℃ unless otherwise specified) PARAMETER Peak Reverse Working Voltage Breakdown Voltage SYMBOL CONDITIONS MIN. TYP. VRWM UNITS 5.0 V 6.5 V 1 μA VBR IT = 1mA Reverse Leakage Current IR VRWM = 5V, T=25℃ Clamping Voltage VC IPP = 5A, tP = 8/20μs 8.5 9.5 V Clamping Voltage VC IPP = 8A, tP = 8/20μs 10 12 V Junction Capacitance Cj VR=0V, f = 1MHz 15 20 pF Copyright © 2017, Singusemi Ver 1.5 5.7 MAX. www.Singusemi.com 2 SAEN15NCB 9 Typical Characteristics 1 ％ of Rated Power Peak Pulse Power(KW) 110 100 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 0.01 150 1 Clamp Voltage -Vc (V) 100 1000 Pulse Duration(μs) Fig 1. Power Derating Curve Fig 2. Peak Pulse Power vs. Pulse Time 11 10 9 8 7 6 0 10 Lead Temperature - TL（℃） Junction Capacitance -Cj (pF) 0 0.1 2 4 6 8 20 15 10 5 0 0 1 2 3 4 5 Peak Pulse Current - IPP(A) Reverse Voltage - VR(V) Fig 3. Clamping Voltage vs. Peak Pulse Current Fig 4. Junction Capacitance vs. Reverse Voltage Copyright © 2017, Singusemi Ver 1.5 www.Singusemi.com 3 SAEN15NCB 10 Product dimension DFN0603-2L L H W s DIM UNITS（mm） TYP. MAX. L 0.55 0.60 0.65 W 0.25 0.30 0.35 H 0.27 0.30 0.35 s 0.00 0.02 0.05 D - 0.35 - E 0.20 0.25 0.30 d1 0.13 0.18 0.23 d2 0.13 0.18 0.23 d2 MIN. d1 D E 11 PCB Layout Footprints 0.65 0.40 0.32 0.25 0.15 12 Ordering Information Part Number Packaging Reel Size SAEN15NCB 10000/Tape & Reel 7 inch Copyright © 2017, Singusemi Ver 1.5 www.Singusemi.com 4