MUBW10-06A7

MUBW 10-06 A7 Converter - Brake - Inverter Module (CBI2) 21 D11 1 D12 D13 2 D14 D15 7 3 D16 14 23 24 8 NTC T7 22 D7 T1 16 15 6 T2 11 10 D2 12 D1 T3 18 17 T4 D3 T5 20 19 T6 13 D5 5 D4 4 D6 9 Three Phase Rectifier VRRM = 1600V IDAVM = 26 A IFSM = 160 A Brake Chopper VCES = 600 V IC25 = 20 A VCE(sat) = 1.9 V Three Phase Inverter VCES = 600 V IC25 = 20 A VCE(sat) = 1.9 V Application: AC motor drives with q Input Rectifier Bridge D11 - D16 Symbol VRRM IFAV IDAVM IFSM Ptot TC = 80°C; sine 180° TC = 80°C; rectangular; d = 1/3 TVJ = 25°C; t = 10 ms; sine 50 Hz TC = 25°C Conditions Maximum Ratings 1600 19 18 160 85 V A A A W q q Input from single or three phase grid Three phase synchronous or asynchronous motor electric braking operation Features q q q Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.3 1.3 1 1 1.6 0.1 V V mA mA µs 1.47 K/W q VF IR trr RthJC IF = 10 A; TVJ = 25°C TVJ = 125°C VR = VRRM; TVJ = 25°C TVJ = 125°C VR = 100 V; IF = 10 A; di/dt = -10 A/µs (per diode) q q High level of integration - only one power semiconductor module required for the whole drive Fast rectifier diodes for enhanced EMC behaviour NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery Industry standard package with insulated copper base plate and soldering pins for PCB mounting Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved 1-8 105 MUBW 10-06 A7 Output Inverter T1 - T6 Symbol VCES VGES VGEM IC25 IC80 RBSOA tSC (SCSOA) Ptot Conditions TVJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 80°C VGE = ±15 V; RG = 82 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive TC = 25°C Maximum Ratings 600 ± 20 ± 30 20 15 ICM = 20 VCEK ≤ VCES 10 85 V V V A A A µs W Equivalent Circuits for Simulation Conduction D11 - D16 Rectifier Diode (typ. at TJ = 125°C) V0 = 1.11V; R0 = 19 mΩ T1 - T6 / D1 - D6 IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.89 V; R0 = 122 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.07 V; R0 = 23 mΩ T7 / D7 IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.89 V; R0 = 122 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.07 V; R0 = 23 mΩ Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.9 2.1 4.5 0.4 200 35 35 230 30 0.4 0.3 600 39 2.3 6.5 0.6 V V V mA mA nA ns ns ns ns mJ mJ pF nC 1.5 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 10 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Thermal Response Inductive load, TVJ = 125°C VCE = 300 V; IC = 10 A VGE = ±15 V; RG = 82 Ω D11 - D16 Rectifier Diode (typ.) Cth1 = 0.093 J/K; Rth1 = 1.212 K/W Cth2 = 0.778 J/K; Rth2 = 0.258 K/W T1 - T6 / D1 - D6 IGBT (typ.) Cth1 = 0.071 J/K; Rth1 = 1.211 K/W Cth2 = 0.726 J/K; Rth2 = 0.293 K/W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE= 300V; VGE = 15 V; IC = 10 A (per IGBT) Output Inverter D1 - D6 Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 20 15 A A Free Wheeling Diode (typ.) Cth1 = 0.043 J/K; Rth1 = 2.738 K/W Cth2 = 0.54 J/K; Rth2 = 0.462 K/W T7 / D7 Symbol VF IRM trr RthJC Conditions IF = 10 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.1 1.3 11 80 V V A ns 3.2 K/W IGBT (typ.) Cth1 = 0.071 J/K; Rth1 = 1.211 K/W Cth2 = 0.726 J/K; Rth2 = 0.293 K/W Free Wheeling Diode (typ.) Cth1 = 0.043 J/K; Rth1 = 2.738 K/W Cth2 = 0.54 J/K; Rth2 = 0.462 K/W © 2001 IXYS All rights reserved 2-8 MUBW 10-06 A7 Brake Chopper T7 Symbol VCES VGES VGEM IC25 IC80 RBSOA tSC (SCSOA) Ptot Symbol Conditions TVJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 80°C VGE = ±15 V; RG = 82 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions Maximum Ratings 600 ± 20 ± 30 20 15 ICM = 20 VCEK ≤ VCES 10 85 V V V A A A µs W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.9 2.1 4.5 0.3 200 40 40 230 30 0.4 0.3 600 39 2.3 6.5 0.5 V V V mA mA nA ns ns ns ns mJ mJ pF nC 1.5 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 10 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 10 A VGE = ±15 V; RG = 82 Ω VCE = 25 V; VGE = 0 V; f = 1 MH z VCE= 300 V; VGE = 15 V; IC = 10 A Brake Chopper D7 Symbol VRRM IF25 IF80 Symbol VF IR IRM trr RthJC © 2001 IXYS All rights reserved Conditions TVJ = 25°C to 150°C TC = 25°C TC = 80°C Conditions IF = 10 A; TVJ = 25°C TVJ = 125°C VR = VRRM; TVJ = 25°C TVJ = 125°C IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 300 V Maximum Ratings 600 20 15 V A A Characteristic Values min. typ. max. 2.1 1.3 0.06 0.07 11 80 V V mA mA A ns 3.2 K/W 3-8 MUBW 10-06 A7 Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Dimensions in mm (1 mm = 0.0394") Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 Conditions Operating Maximum Ratings -40...+125 150 -40...+125 2500 2.7 - 3.3 °C °C °C V~ Nm Conditions T = 25°C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 kΩ K IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M5) Conditions Characteristic Values min. typ. max. 5 mΩ mm mm K/W g © 2001 IXYS All rights reserved 4-8 MUBW 10-06 A7 Input Rectifier Bridge D11 - D16 50 A 40 IF 30 TVJ= 125°C TVJ= 25°C 60 102 20 40 TVJ= 150°C TVJ= 150°C TVJ= 45°C 100 50Hz, 80% VRRM A 80 IFSM TVJ= 45°C I2t 103 A2s 10 20 0 0.0 0.4 0.8 1.2 VF 1.6 V 2.0 0 0.001 101 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms10 89 t Fig. 1 Forward current versus voltage drop per diode 500 W 400 Ptot 300 Fig. 2 Surge overload current Fig. 3 I2t versus time per diode 60 A 50 Id(AV) 40 200 RthA: 0.05 K/W 0.15 K/W 0.3 K/W 0.5 K/W 1 K/W 2 K/W 5 K/W 30 20 100 10 0 0 20 40 60 80 Id(AV)M A 0 20 40 60 80 100 120 140 °C Tamb 0 0 20 40 60 80 100 120 140 °C TC Fig. 4 1 1.6 K/W 1.2 ZthJC Power dissipation versus direct output current and ambient temperature, sin 8 0 ° Fig. 5 Max. forward current versus case temperature 0.8 0.4 0.0 0.001 DWF N9-16 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case © 2001 IXYS All rights reserved 5-8 MUBW 10-06 A7 Output Inverter T1 - T6 / D1 - D6 30 25 A IC VGE= 17V 15V 13V 11V 30 A 25 IC 20 15 10 9V 9V VGE= 17V 15V 13V 20 15 10 5 TJ = 25°C 11V 5 TJ = 125°C 0 0 1 2 3 4 VCE 5 V 0 6 0 1 2 3 4 VCE 5 V 6 Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics 20 A IC 20 A IF 15 15 10 TJ = 125°C TJ = 25°C 10 TJ = 125°C TJ = 25°C 5 VCE = 20V 5 0 4 6 8 10 VGE 0 12 V 14 0 1 2 VF V 3 Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of free wheeling diode 40 A trr 20 V VGE 15  ns 30 IRM ' trr $ TJ = 125°C VR = 300V IF = 10A MUBW1006A7 10 20 5 VCE = 300V IC = 10A 10 IRM !  0 0 10 20 30 40 QG 0 50 nC 60 0 200 400 600 -di/dt 800 s A/µ 1000 Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics of free wheeling diode © 2001 IXYS All rights reserved 6-8 MUBW 10-06 A7 Output Inverter T1 - T6 / D1 - D6 1.5 mJ Eon VCE = 300V VGE = ±15V RG = 82Ω TVJ = 125°C 60 ns Jd(on) 40 Jr t 1.00 mJ Eoff0.75 Jd(off) VCE = 300V VGE = ±15V RG = 82Ω TVJ = 125°C 400 ns 300 t 200 Eoff 1.0 0.50 20 0.5 Eon 0.25 Jf 100 0.0 0 10 IC 0 0.00 0 10 IC 20 A 0 20 A Fig. 13 Typ. turn on energy and switching times versus collector current 0.75 mJ Eon 45 ns Jd(on) 30 Jr Eon t Eoff Fig. 14 Typ. turn off energy and switching times versus collector current 0.6 mJ 300 ns 200 Eoff t 0.50 VCE = 300V VGE = ±15V IC = 10A TVJ = 125°C 0.4 VCE = 300V VGE = ±15V IC = 10A TVJ = 125°C Jd(off) 0.25 15 0.2 100 Jf 0.00 0 20 40 60 80 100 RG 0 120 Ω 140 0.0 0 20 40 60 80 100 RG 0 120 Ω 140 Fig. 15 Typ. turn on energy and switching times versus gate resistor 25 A 10 K/W 1 ZthJC 0.1 0.01 0.001 Fig.16 Typ. turn off energy and switching times versus gate resistor diode IGBT 20 ICM 15 10 5 0 0 100 200 300 400 500 600 VCE 700 V RG = 82 Ω TVJ = 125°C single pulse 0.0001 0.00001 0.0001 0.001 MUBW1006A7 0.01 0.1 t 1 s 10 Fig. 17 Reverse biased safe operating area RBSOA Fig. 18 Typ. transient thermal impedance © 2001 IXYS All rights reserved 7 -8 MUBW 10-06 A7 Brake Chopper T7 / D7 30 A 25 IC 20 A IF 15 20 15 TJ = 25°C TJ = 125°C TJ = 125°C TJ = 25°C 10 10 5 5 0 0 1 2 3 VCE VGE = 15V 0 4 V5 0 1 2 VF V 3 Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of free wheeling diode 300 0.75 mJ Eoff Eoff Jd(off) 0.4 mJ t Eoff 0.3 Eoff Jd(off) VCE = 300V VGE = ±15V IC = 10A TVJ = 125°C 400 ns 300 t ns 200 0.50 VCE = 300V VGE = ±15V RG = 82Ω TVJ = 125°C 0.2 100 200 0.25 0.1 Jf 100 0.00 0 5 10 15 IC 20 A 0 25 0.0 0 20 40 60 80 100 Jf 0 120 Ω 140 RG Fig. 21 Typ. turn off energy and switching times versus collector current 10 K/W 1 ZthJC 0.1 R 0.01 0.001 single pulse diode IGBT Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC 10000 Ω 1000 0.0001 0.00001 0.0001 0.001 100 0.01 0.1 t 1 s 10 0 25 50 75 100 T MUBW1006A7 125 °C150 Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus temperature © 2001 IXYS All rights reserved 8-8