MUBW20-06A6

MUBW 20-06 A6 Converter - Brake - Inverter Module (CBI1) Rectifier VRRM = 1200V IFAVM = 11 A IFSM = 250 A Brake VCES = 600 V IC25 = 11 A VCE(sat) = 2 V Inverter VCES = 600 V IC25 = 23 A VCE(sat) = 2.1 V Features q Input Rectifier Bridge D8 - D13 Symbol VRRM IF IFAVM IFSM i²t TVJ TVJ = 25°C TVJ = 150°C; TK = 70°C TVJ = 45°C; t = 10 ms sine 50 Hz TVJ = 125°C Conditions Maximum Ratings 1200 36 11 250 310 +150 V A A A A²s °C q q q q q NPT IGBT technology Square RBSOA, no latchup Free wheeling diodes with Hiperfast and soft recovery behaviour Isolation voltage 2500 V~ Built in temperature sense High level of integration: one module for complete drive system Direct Copper Bonded Al2O3 ceramic base plate Applications Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 10 3 1.15 1.4 1.4 µA mA V °C/W q q AC motor control AC servo and robot drives q IR VF RthJC VRRM = 1200 V; TVJ = 25°C TVJ = 125°C IF = 36 A per die Advantages q q q No need of external isolation Easy to mount with two screws Package designed for wave soldering High temperature and power cycling capability © 2000 IXYS All rights reserved 1-8 031 IXYS reserves the right to change limits, test conditions and dimensions. MUBW 20-06 A6 Output Inverter T1 - T6, D1 - D6 Symbol VCES VCGR VGE IC ICM tSC Ptot TVJ TVJ Symbol Conditions TVJ = 25°C TVJ = 25°C; RGE = 20kW TVJ = 25°C TC = 25°C TC = 90°C tp = 1 ms = 1% duty cycle; TC = 25°C TC = 90°C Maximum Ratings 600 600 ±20 23 13 46 26 10 68 +150 +150 V V V A A A A µs W °C °C IGBT VCE = 600 V; TVJ = 125°C non-repetitive TC = 25°C Free-Wheeling Diode IGBT Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1 100 4.5 600 2.1 2.4 25 25 2.5 2.8 5.5 6.5 mA nA V V V V ns ns ns ns mJ mJ pF pF pF S 59 2 1.8 0.25 0.4 1.3 250 nC V V µs µC µC µA °C/W °C/W ICES IGES VGE(th) V(BR)CES VCE(sat) tf tr td(on) td(off) Eoff Eon Ciss Coss Crss gfs Qg VF trr Qr Ir RthJC VGE = 0 V; VCE = 600 V VCE = 0 V; VGE = 25 V VGE = VCE; IC = 0.4 mA VGE = 0 V; IC = 10 mA; TVJ = -40°C VGE = 15 V; IC = 15 A; TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCC = 300 V; IC = 15 A RG = 68 W; VGE = ±15 V 30 200 0.5 0.7 800 85 52 4.5 VGE = 0 V VCE = 25 V f = 1 MHz VCE = 20 V; IC = 15 A VCC = 300 V; IC = 15 A pulse; VGE = 15 V IF = 15 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 15 A; VR = -300 V; TVJ = 125°C diF/dt = -500 A/µs; VGE = 0 V IF = 15 A; VR = -300 V; TVJ = 25°C diF/dt = -500 A/µs; VGE = 0 V; TVJ = 125°C IGBT Diode (per die) (per die) 1.5 2.0 © 2000 IXYS All rights reserved 2-8 MUBW 20-06 A6 Brake Chopper T7, D7 Symbol VCES VCGR VGE IC ICM tSC Ptot TVJ TVJ Symbol Conditions TVJ = 25°C TVJ = 25°C; RGE = 20kW TVJ = 25°C TC = 25°C TC = 90°C tp = 1 ms = 1% duty cycle; TC = 25°C TC = 90°C Maximum Ratings 600 600 ±20 11 8 22 16 10 45 +150 +150 V V V A A A A µs W °C °C IGBT VCE = 600 V; TVJ = 125°C non-repetitive TC = 25°C Free-Wheeling Diode IGBT Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 20 100 3 600 2 2.3 75 30 2.5 2.8 110 45 80 375 4 5 µA nA V V V V ns ns ns ns mJ mJ 435 50 30 pF pF pF S 32.5 2 1.8 0.2 0.3 0.9 250 nC V V µs µC µC µA °C/W °C/W ICES IGES VGE(th) V(BR)CES VCE(sat) tf tr td(on) td(off) Eoff Eon Ciss Coss Crss gfs Qg VF trr Qr Ir RthJC VGE = 0 V; VCE = 600 V VCE = 0 V; VGE = 25 V VGE = VCE; IC = 0.5 mA VGE = 0 V; IC = 0.5 mA; TVJ = -40°C VGE = 15 V; IC = 6 A; TVJ = 25°C TVJ = 150°C Inductive load, TVJ = 150°C VCC = 400 V; IC = 6 A RG = 50 W; VGE = ±15 V 50 250 0.21 0.25 350 40 25 4.2 VGE = 0 V VCE = 25 V f = 1 MHz VCE = 20 V; IC = 6 A VCC = 400 V; IC = 6 A pulse; VGE = 15 V IF = 10 A; VGE = 0 V; TVJ = 25°C TVJ = 150°C IF = 10 A; VR = -300 V; VGE = 0 V diF/dt = -350 A/µs; TVJ = 150°C IF = 10 A; VR = -300 V; TVJ = 25°C diF/dt = -350 A/µs; VGE= 0 V; TVJ = 125°C IGBT Diode (per die) (per die) 2.3 2.3 © 2000 IXYS All rights reserved 3-8 MUBW 20-06 A6 Module Symbol Tstg VISOL Md dS dA Weight IISOL £ 1 mA; 50/60 Hz; t = 1 min Mounting torque (M4) Creepage distance on surface Strike distance in air typ. Conditions Maximum Ratings -40...+125 2500 2.0 - 2.2 18 - 20 12.7 12.7 42 °C V~ Nm lb.in. mm mm g Temperature Sensor R Symbol R Conditions Tamb = 20°C Maximum Ratings 4.7 kW For additional data see C620/4.7k 5% S+M NTC thermistor catalog Dimensions in mm (1 mm = 0.0394") 5.7 ± 0.3 21.1 ± 0.5 17.1 ± 0.3 3.4 ± 0.1 57.3-0.3 2 +0. 5.5 4.3+ 0.2 © 2000 IXYS All rights reserved 4-8 MUBW 20-06 A6 Input Rectifier Bridge D8 - D13 50 A 40 IF 30 300 1000 800 A2s typ. lim. A 250 IFSM 200 VR = 0 V 50Hz, 80%VRRM TVJ = 45°C TVJ = 180°C It 2 600 400 TVJ= 180°C TVJ= 25°C 20 150 100 10 TVJ=45°C 200 50 TVJ=180°C 0 V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF 0 10-3 100 10-2 10-1 100 s t 101 1 2 3 4 5 6 7 ms10 89 t Forward characteristics Surge overload current IFSM: crest value, t: duration I2t versus time (1-10 ms) 10 (ZthJH is measured using 50 µm thermal grease) 1 D =0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.1 ZthJH[K/W] 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 0.001 100 t (s) Transient thermal resistance junction to heatsink © 2000 IXYS All rights reserved 5-8 MUBW 20-06 A6 Output Inverter T1 - T6 © 2000 IXYS All rights reserved 6-8 MUBW 20-06 A6 Output Inverter T1 - T6 Transient thermal resistance junction to heatsink 10 (ZthJH is measured using 50 µm thermal grease) 1 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.1 IGBT ZthJH [K/W] 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 0.001 100 t (s) © 2000 IXYS All rights reserved 7-8 MUBW 20-06 A6 Output Inverter D1 - D6 40 A IF 30 2000 nC 1500 TVJ= 100°C VR = 300V 40 A 30 IRM TVJ= 100°C VR = 300V 20 TVJ=150°C TVJ=100°C TVJ= 25°C Qr 1000 20 IF= 30A IF= 15A IF= 7.5A 500 10 IF= 30A IF= 15A IF= 7.5A 10 0 0 1 VF 2 V 0 100 A/ms 1000 -diF/dt 0 0 200 400 600 A/ms 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 120 ns Fig. 3 Peak reverse current IRM versus -diF/dt 20 2.0 TVJ= 100°C VR = 300V TVJ= 100°C V IF = 15A 1.6 VFR 1.5 Kf trr 110 VFR 15 ms 1.2 tfr 100 1.0 IF= 30A IF= 15A IF= 7.5A tfr 10 0.8 IRM 0.5 90 Qr 80 5 0.4 15-06A 0.0 0 40 80 120 °C 160 TVJ 70 0 200 400 600 -diF/dt 800 A/ms 1000 0 0 200 400 0.0 600 A/ms 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt (ZthJH is measured using 50 µm thermal grease) 10 1 D= 0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.1 FRED ZthJH[K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t (s) Transient thermal resistance junction to heatsink © 2000 IXYS All rights reserved 8-8