MWI150-06A8

MWI 150-06 A8 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 IC25 = 170 A = 600 V VCES VCE(sat) typ. = 2.0 V Preliminary data 1 2 5 6 9 10 19 17 15 3 4 14, 20 7 8 11 12 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ± 20 170 115 ICM = 300 VCEK ≤ VCES 10 515 V V A A A µs W Features • NPT IGBT technology • low saturation voltage • low switching losses • switching frequency up to 30 kHz • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate Advantages TC = 25°C • space savings • reduced protection circuits • package designed for wave soldering Typical Applications • AC motor control • AC servo and robot drives • power supplies VCE = VCES; VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C non-repetitive Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 1.1 400 125 30 225 35 2.3 4.6 6.5 520 2.5 6.5 1.5 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.24 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 150 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 3 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 150 A VGE = ±15 V; RG = 1.5 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 150 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 1-2 340 340 MWI 150-06 A8 Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 210 130 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Conditions IF = 150 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 150 A; diF/dt = -750 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 1.9 1.4 37 100 2.0 V V A ns 0.41 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.1 V; R0 = 8 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.1 V; R0 = 2.25 mΩ Thermal Response Conditions operating Maximum Ratings -40...+125 +150 -40...+125 2500 3-6 °C °C °C V~ Nm IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M5) Conditions IGBT (typ.) Cth1 = 0.295 J/K; Rth1 = 0.176 K/W Cth2 = 1.750 J/K; Rth2 = 0.064 K/W Free Wheeling Diode (typ.) Cth1 = 0.21 J/K; Rth1 = 0.317 K/W Cth2 = 1.28 J/K; Rth2 = 0.093 K/W Characteristic Values min. typ. max. 1.8 mΩ mm mm 0.01 300 K/W g Creepage distance on surface Strike distance in air with heatsink compound 10 10 Dimensions in mm (1 mm = 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 2-2 340