SFH313FA

NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 313 SFH 313 FA SFH 313 SFH 313 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm (SFH 313) und bei 880 nm (SFH 313 FA) • Hohe Linearität • 5 mm-Plastikbauform Anwendungen • Computer-Blitzlichtgeräte • Lichtschranken für Gleich- und Wechsellichtbetrieb • Industrieelektronik • „Messen/Steuern/Regeln“ Typ Type SFH 313 SFH 313-2/3 SFH 313 FA SFH 313 FA-2/3 SFH 313 FA-3/4 Bestellnummer Ordering Code Q62702P1667 Q62702P3598 Q62702P1674 Q62702P3597 Q62702P5196 Features • Especially suitable for applications from 460 nm to 1080 nm (SFH 313) and of 880 nm (SFH 313 FA) • High linearity • 5 mm plastic package Applications • • • • Computer-controlled flashes Photointerrupters Industrial electronics For control and drive circuits 2007-03-30 1 SFH 313, SFH 313 FA Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 μs Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 40 … + 100 70 50 100 7 200 375 Einheit Unit °C V mA mA V mW K/W Top; Tstg VCE IC ICS VEC Ptot RthJA 2007-03-30 2 SFH 313, SFH 313 FA Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessungen der Chipfläche Dimensions of chip area Halbwinkel Half angle Kapazität, VCE = 5 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 20 V, E = 0 Symbol Symbol SFH 313 λS max λ 850 460 … 1080 Wert Value SFH 313 FA 870 740 … 1080 nm nm Einheit Unit A L×B L×W ϕ 0.55 1×1 ± 10 10 3 (≤ 200) 0.55 1×1 ± 10 10 3 (≤ 200) mm2 mm × mm Grad deg. pF nA CCE ICEO 2007-03-30 3 SFH 313, SFH 313 FA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom, λ = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ Kollektor-EmitterSättigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) × 0.3, Ee = 0.5 mW/cm2 1) 1) Symbol Symbol -1 -2 Wert Value -3 -4 Einheit Unit IPCE tr , t f 2.5 … 5 8 4…8 10 6.3 … 12.5 12 ≥ 10 14 mA μs VCEsat 150 150 150 150 mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. IPCEmin is the min. photocurrent of the specified group. Directional Characteristics Srel = f (ϕ) 40 30 20 ϕ 10 0 1.0 OHF02330 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2007-03-30 4 SFH 313, SFH 313 FA TA = 25 °C, λ = 950 nm Relative Spectral Sensitivity, SFH 313 Srel = f (λ) 100 S rel % 80 70 60 50 40 30 10 -1 OHF02332 Relative Spectral Sensitivity, SFH 313 FA Srel = f (λ) 100 S rel % 80 OHF02331 Dark Current ICEO = f (VCE), E = 0 Ι CEO 10 2 nA OHF02341 10 1 60 10 0 40 20 10 0 400 500 600 700 800 900 nm 1100 λ 20 0 400 600 800 1000 nm 1200 10 -2 0 10 20 30 40 50 V 70 V CE λ Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25 °C Ι PCE 25 1.4 1.2 1.0 0.8 0.6 Photocurrent IPCE = f (Ee), VCE = 5 V Ι PCE 10 2 mA OHF02337 Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz CCE 18 pF 16 14 12 OHF00349 Ι PCE 1.6 OHF01524 10 1 10 0 10 8 6 0.4 0.2 0 -25 10 -1 4 2 0 25 50 75 C 100 TA 10 -2 10 -3 10 -2 mW/cm 2 Ee 10 0 0 -2 10 10 -1 10 0 10 1 V 10 2 V CE Photocurrent IPCE = f (VCE), E = parameter Ι PCE 10 2 mA mW cm 2 0.5 10 1 0.25 mW cm 2 mW cm 2 mW 0.1 2 cm OHF02336 Dark Current ICEO = f (TA), VCE = 10 V, E = 0 Ι CEO 10 3 nA OHF02342 Total Power Dissipation Ptot = f (TA) Ptot 250 mW 200 OHF02340 1 10 2 150 10 1 100 10 0 50 10 0 0 10 20 30 40 50 V 70 VCE 10 -1 0 0 20 40 60 80 ˚C 100 TA 0 20 40 60 80 ˚C 100 TA 2007-03-30 5 SFH 313, SFH 313 FA Maßzeichnung Package Outlines 9.0 (0.354) 8.2 (0.323) Area not flat 0.8 (0.031) 0.5 (0.020) 7.8 (0.307) 7.5 (0.295) ø5.1 (0.201) ø4.8 (0.189) 0.6 (0.024) 0.4 (0.016) 2.54 (0.100) spacing 5.9 (0.232) 5.5 (0.217) 1.8 (0.071) 1.2 (0.047) 29 (1.142) 27 (1.063) 5.7 (0.224) 5.1 (0.201) Chip position 0.6 (0.024) 0.4 (0.016) Cathode (Diode) Collector (Transistor) Maße in mm (inch) / Dimensions in mm (inch). GEXY6260 2007-03-30 6 SFH 313, SFH 313 FA Lötbedingungen Soldering Conditions Wellenlöten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 250 235 C ... 260 C 10 s Normalkurve standard curve 2. Welle 2. wave Grenzkurven limit curves 200 1. Welle 1. wave 150 100 C ... 130 C 100 2 K/s 50 Zwangskühlung forced cooling ca 200 K/s 5 K/s 2 K/s 0 0 50 100 150 t 200 s 250 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. Attention please!The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-03-30 7