SFH3201

NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • SMT-Bauform ohne Basisanschluß, geeignet für Vapor Phase-Löten, IR-Reflow-Löten (JEDEC level 4) und Wellenlöten (JEDEC level 4) • Nur gegurtet lieferbar Anwendungen • Umgebungslicht-Detektor • Lichtschranken für Gleich- und Wechsel-lichtbetrieb • Industrieelektronik • „Messen/Steuern/Regeln“ Typ Type SFH 3201 SFH 3201-2/3 Bestellnummer Gehäuse Ordering Code Package Q62702-P5043 Q62702-P5209 P-DSO-6 P-DSO-6 Features • Especially suitable for applications from 460 nm to 1080 nm • High linearity • SMT package without base connection, suitable for vapor phase, IR reflow soldering (JEDEC level 4) and wave soldering (JEDEC level 4) • Available only on tape and reel Applications • • • • Ambient light detector Photointerrupters Industrial electronics For control and drive circuits 2002-12-06 1 SFH 3201 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektor-Emitterspannung, t < 120 s Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand für Montage auf PC-Board Thermal resistance for mounting on pcb Symbol Symbol Wert Value – 40 … + 100 20 70 50 100 7 120 500 Einheit Unit °C V V mA mA V mW K/W Top; Tstg VCE VCE IC ICS VEC Ptot RthJA 2002-12-06 2 SFH 3201 Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der Chipfläche Dimensions of chip area Halbwinkel Half angle Kapazität, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 20 V, E = 0 Symbol Symbol λS max λ Wert Value 850 460 … 1080 Einheit Unit nm nm A L×B L×W ϕ 0.55 1×1 ± 60 15 3 (≤ 200) mm2 mm × mm Grad deg. pF nA CCE ICEO 2002-12-06 3 SFH 3201 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom, λ = 950 nm Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/ standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ Kollektor-EmitterSättigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) × 0.3, Ee = 0.1 mW/cm2 1) 1) Symbol Symbol -1 -2 Wert Value -3 Einheit Unit IPCE IPCE tr, tf 63 … 125 1.65 16 100 … 200 2.6 24 160 … 320 4.2 34 µA mA µs VCEsat 170 (≤ 250) 170 (≤ 250) 170 (≤ 250) mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. IPCEmin is the min. photocurrent of the specified group. Directional Characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2002-12-06 4 SFH 3201 TA = 25 °C, λ = 950 nm Rel. Spectral Sensitivity, Srel = f (λ) 100 S rel % 80 70 60 50 40 30 20 10 0 400 500 600 700 800 900 nm 1100 λ 10 -4 -3 10 10 -2 mW/cm 2 Ee 10 0 10 -3 10 -2 10 -1 Photocurrent IPCE = f (Ee), VCE = 5 V Ι pce 10 1 mA 1 2 3 OHF00326 Total Power Dissipation Ptot = f (TA) 140 Ptot mW 120 100 80 60 40 20 0 OHF00309 OHF02332 10 0 0 20 40 60 80 C 100 TA Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25 °C Ι PCE 25 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -25 Dark Current ICEO = f (VCE), E = 0 Ι CEO 10 2 nA OHF02341 Dark Current ICEO = f (TA), VCE = 10 V, E = 0 Ι CEO 10 3 nA OHF02342 Ι PCE 1.6 OHF01524 10 1 10 2 10 0 10 1 10 -1 10 0 10 -2 0 25 50 75 C 100 TA 0 10 20 30 40 50 V 70 V CE 10 -1 0 20 40 60 80 ˚C 100 TA Photocurrent IPCE = f (VCE) Ι pce 3.0 mA 2.5 1.0 mW/cm 2 OHF00327 Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz C CE 20 pF OHF02344 15 2.0 1.5 0.5 mW/cm 2 1.0 0.25 mW/cm 2 0.5 0.1 mW/cm 2 0 0 10 20 30 40 50 60 V 70 Vce 10 5 0 -2 10 10 -1 10 0 10 1 V 10 2 VCE 2002-12-06 5 SFH 3201 Maßzeichnung Package Outlines 0...0.1 (0...0.004) 0.2 M A 0.15 (0.006) 0.13 (0.005) 6.2 (0.244) A 5.8 (0.228) 3.4 (0.134) 3.0 (0.118) 4.2 (0.165) 3.8 (0.150) B Active area 0.55 (0.022) 0.5 (0.020) 0.3 (0.012) 1 2 3 6 5 4 0.1 M B 1 2 3 Emitter 4 0.7 (0.028) 0.4 (0.016) 1.27 (0.050) spacing 5 - Collector 2.54 (0.100) spacing 6 GEOY6982 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2002-12-06 6 2.1 (0.083) 1.7 (0.067) SFH 3201 Löthinweise Soldering Conditions Bauform Type Drypack Tauch-, Schwalllötung Reflowlötung Level acc. Dip, Wave Soldering Reflow Soldering to IPS-stand. Peak Temp. Max. Time in Peak Temp. Max. Time 020 (solderbath) Peak Zone (package in Peak temp.) Zone 4 260 10 s 245 °C 10 s Kolbenlötung Iron Soldering (Iron temp.) SFH 3201 n.a. Bitte Verarbeitungshinweise für SMT-Bauelemente beachten! Please observe the handling guidelines for SMT devices! Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2002-12-06 7