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SFH331-JK

SFH331-JK

  • 厂商:

    AMSOSRAM(艾迈斯半导体)

  • 封装:

    LCC4

  • 描述:

    PHOTOTRANSISTOR/EMITTERSMD

  • 数据手册
  • 价格&库存
SFH331-JK 数据手册
SMT Multi TOPLED® SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features • SMT package with red emitter (635 nm) and Si-phototransistor • Suitable for SMT assembly • Available on tape and reel • Emitter and detector can be controlled separately • Suitable for IR-reflow soldering Applications • Data transmission • Lock bar • Infrared interface Bestellnummer Ordering Code Q62702-P1634 Anwendungen • Datenübertragung • Wegfahrsperre • Infrarotschnittstelle Typ Type SFH 331-JK 2001-02-22 1 SFH 331 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlaßstrom (LED) Forward current (LED) Kollektorstrom (Transistor) Collector current (Transistor) Stoßstrom Surge current t ≤ 10 µs, D = 0.005 Sperrspannung (LED) Reverse voltage (LED) Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) Verlustleistung Power dissipation Wärmewiderstand Sperrschicht/Umgebung Thermal resistance junction/ambient Montage auf PC-Board1) (Padgröße ≥ 16 mm2) mounting on pcb1) (pad size ≥ 16 mm2) Sperrschicht / Lötstelle junction / soldering joint 1) Symbol Symbol LED Wert Value Transistor Einheit Unit Top Tstg Tj IF IC IFM – 40 … + 100 – 40 … + 100 °C – 40 … + 100 – 40 … + 100 °C + 100 30 – 500 + 100 – 15 75 °C mA mA mA VR VCE Ptot 5 – 100 – 35 165 V V mW RthJA RthJS 450 450 K/W 350 – K/W PC-board: G30/FR4 Note: Die angegebenen Grenzdaten gelten für den Chip, für den sie angegeben sind, unabhängig vom Betriebszustand des anderen. The stated max. ratings refer to the specified chip regardless of the operating status of the other one. 2001-02-22 2 SFH 331 Kennwerte LED (TA = 25 °C) Characteristics LED Bezeichnung Parameter Wellenlänge des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlänge Dominant wavelength IF = 10 mA Spektrale Bandbreite bei 50% von Irel max Spectral bandwidth at 50% of Irel max IF = 10 mA Abstrahlwinkel bei 50% von IV (Vollwinkel) Viewing angle at 50% of IV Durchlaßspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Kapazität, Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10% to 90% IV from 90% to 10% IF = 100 mA, tp = 10 µs, RL = 50 Ω Lichtstärke (Gruppe JK) Luminous intensity (group JK) IF = 10 mA (typ.) (max.) (typ.) (max) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) Symbol Symbol Wert Value 635 Einheit Unit nm λpeak λdom 628 nm ∆λ 45 nm 2ϕ 120 2.0 2.6 0.01 10 12 Grad deg. V V VF VF IR IR Co µA µA pF (typ.) (typ.) (typ.) tr tf IV 300 150 ns ns 6 (4.0 … 12.5) mcd 2001-02-22 3 SFH 331 Kennwerte Fototransistor (TA = 25 °C, λ = 950 nm) Characteristics Phototransistor Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol Symbol Wert Value 860 380 … 1150 Einheit Unit nm nm λS max λ S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche (∅ 240 µm) Radiant sensitive area (∅ 240 µm) Abmessungen der Chipfläche Dimensions of chip area Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip surface to case surface Halbwinkel Half angle Kapazität Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 Fotostrom Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V Anstiegszeit/Abfallzeit Rise time/Fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC = 5 µA, Ee = 0.1 mW/cm2 A L×B H ϕ 0.045 0.45 × 0.45 0.5 … 0.7 mm2 mm × mm mm Grad deg. pF ± 60 5.0 CCE ICEO 1 (≤ 200) nA IPCE ≥ 16 µA tr, tf 7 µs VCEsat 150 mV 2001-02-22 4 SFH 331 LED Radiation Characteristics Irel = f (ϕ) Phototransistor Directional Characteristics Srel = f (ϕ) 40˚ 30˚ 20˚ 10˚ 0˚ OHL01660 ϕ 1.0 50˚ 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 90˚ 100˚ 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ 0 LED Relative Spectral Emission Irel = f (λ), TA = 25 °C, IF = 20 mA V(λ) = Standard Eye Response Curve 100 % Φ rel 80 Vλ 60 OHL02350 40 20 super-red 0 400 450 500 550 600 650 λ nm 700 2001-02-22 5 SFH 331 Forward Current IF = f (VF), TA = 25 °C 10 2 OHL02351 Rel. Luminous Intensity IV/IV(10mA) = f (IF), TA = 25 °C 10 1 ΙV Ι V(10mA) 10 0 OHL02316 Perm. Pulse Handling Capability IF = f (tp), duty cycle D = parameter, TA = 2 5 ° C 10 3 OHL01686 Ι F mA IF mA D= tP T tP IF T 0.01 0.02 0.05 0.1 D = 0.005 10 1 5 super-red 10 0 5 5 super-red 10 -1 5 10 2 0.2 5 10 -2 5 0.5 DC 10 -1 1.0 1.4 1.8 2.2 2.6 3.0 V 3.4 VF 10 -3 10 -1 5 10 0 5 10 1 mA 10 ΙF 2 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 s 10 1 tp Max. Permissible Forward Current IF = f (TA) ΙF 60 mA 50 OHL01661 Wavelength at Peak Emission λpeak = f (TA), IF = 20 mA 690 OHL02104 Dominant Wavelength λdom = f (TA), IF = 20 mA 690 OHL02105 λ peak nm 650 λ dom nm 650 40 630 super-red 630 super-red 30 610 orange 610 590 570 550 orange yellow green pure-green 0 20 40 60 80 ˚C 100 TA 20 590 yellow 10 570 550 green pure-green 0 0 20 40 60 80 ˚C 100 TA 0 20 40 60 80 ˚C 100 TA Forward Current VF = f (TA), IF = 10 mA 2.4 VF V 2.2 OHL02106 Rel. Luminous Intensity IV/IV(25 °C) = f (TA), IF = 10 mA 2.0 IV I V (25 ˚C) 1.6 OHL02150 2.0 green super-red orange yellow 1.2 yellow green 1.8 pure-green 0.8 orange super-red pure-green 1.6 0.4 1.4 0 20 40 60 80 ˚C 100 TA 0.0 0 20 40 60 80 ˚C 100 TA 2001-02-22 6 SFH 331 Phototransistor 100 S rel % 80 Rel. Spectral Sensitivity Srel = f (λ) OHF01121 Photocurrent IPCE = f (VCE), Ee = Parameter 10 mA Ι PCE 0 OHF01529 Dark Current ICEO = f (VCE), E = 0 10 1 nA Ι CEO 10 0 OHF01527 1 mW cm 2 mW cm 2 0.5 60 10 -1 mW 0.25 cm 2 10 -1 0.1 mW cm 2 40 10 -2 20 0 400 600 800 1000 nm 1200 λ 10 -2 0 5 10 15 20 25 30 V 35 V CE 10 -3 0 5 10 15 20 25 30 V 35 V CE Total Power Dissipation Capacitance Ptot = f (TA) 200 mW P tot 160 OHF00871 CCE = f (VCE), f = 1 MHz, E = 0 5.0 C CE pF 4.0 OHF01528 Photocurrent IPCE/IPCE25° = f (TA), VCE = 5 V Ι PCE Ι PCE 25 1.6 1.4 1.2 OHF01524 3.5 120 3.0 2.5 1.0 0.8 0.6 0.4 80 2.0 1.5 40 1.0 0.5 0.2 0 -25 0 0 20 40 60 80 ˚C 100 TA 0 10 -2 10 -1 10 0 10 1 V 10 2 V CE 0 25 50 75 C 100 TA Dark Current ICEO = f (TA), VCE = 5 V, E = 0 Ι CEO 10 3 nA OHF01530 Photocurrent IPCE = f (Ee), VCE = 5 V 10 3 µA Ι PCE 10 2 OHF01924 10 2 10 1 10 1 4 3 2 10 0 10 0 10 -1 -25 0 25 50 75 ˚C 100 TA 10 -1 -3 10 10 -2 mW/cm 2 Ee 10 0 2001-02-22 7 SFH 331 Maßzeichnung Package Outlines 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083) 0.8 (0.031) 0.6 (0.024) 2 A C 1 Package marking Emission color : super-red (SFH 331) C E 4 3 2.1 (0.083) 1.7 (0.067) 0.9 (0.035) 0.7 (0.028) (2.4 (0.094)) 3.4 (0.134) 3.0 (0.118) 0.1 (0.004) typ 1.1 (0.043) 0.5 (0.020) 0.6 (0.024) 0.4 (0.016) 0.18 (0.007) 0.12 (0.005) GPLY6924 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-22 8 3.7 (0.146) 3.3 (0.130)
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