GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 400 SFH 401
SFH 400
SFH 401
Wesentliche Merkmale • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • Hermetisch dichtes Metallgehäuse • SFH 401: Gehäusegleich mit BPX 43, BPY 62 Anwendungen • Lichtschranken für Gleich- und Wechsellichtbetrieb • IR-Gerätefernsteuerungen • Sensorik • Lichtgitter
Features • • • • • Cathode is electrically connected to the case High reliability Matches all Si-Photodetectors Hermetically sealed package SFH 401: Same package as BPX 43, BPY 62
Applications • • • • Photointerrupters IR remote control Sensor technology Light curtains
Typ Type SFH 400 SFH 401
Bestellnummer Ordering Code Q62702P0096 Q62702P0097
Gehäuse Package 18 A3 DIN 41876 (TO-18), Glaslinse, hermetisch dichtes Gehäuse, Anschlüsse im 2.54-mm-Raster (1/10’’) 18 A3 DIN 41876 (TO-18) glass lens, hermetically sealed package, solder tabs lead spacing 2.54 mm (1/10’’)
2007-12-07
1
SFH 400, SFH 401
Grenzwerte (TC = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range SFH 400 Betriebs- und Lagertemperatur Operating and storage temperature range SFH 401 Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA, tp= 20ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA, tp= 20ms Abstrahlwinkel Half angle SFH 400 SFH 401 Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Symbol Symbol λpeak Wert Value 950 Einheit Unit nm Symbol Symbol Wert Value – 40 … + 125 Einheit Unit °C
Top; Tstg
Top; Tstg
– 40 … + 100
°C
VR IF IFSM Ptot RthJA RthJC
5 300 3 470 450 160
V mA A mW K/W K/W
∆λ
55
nm
ϕ ϕ
±6 ± 15 0.25 0.5 × 0.5
Grad deg. mm2 mm2
A L×B L×W
2007-12-07
2
SFH 400, SFH 401
Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Abstand Chipoberfläche bis Linsenscheitel Distance chip front to lens top SFH 400 SFH 401 Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Ω Switching times, Ιe from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Ω Kapazität Capacitance VR = 0 V, f = 1 MHz Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs Sperrstrom Reverse current VR = 5 V Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. Φe, IF = 100 mA Temperature coefficient of Ie or Φe, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von λ, IF = 100 mA Temperature coefficient of λ, IF = 100 mA Symbol Symbol Wert Value Einheit Unit
H H tr , tf
4.0 … 4.8 2.8 … 3.7 1
mm mm µs
Co
40
pF
VF VF IR
1.30 (≤ 1.5) 1.90 (≤ 2.5) 0.01 (≤ 1)
V V µA
Φe
8
mW
TCI
– 0.55
%/K
TCV TCλ
– 1.5 + 0.3
mV/K nm/K
2007-12-07
3
SFH 400, SFH 401
Gruppierung der Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.01 sr Grouping of Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstärke Radiant intensity IF = 1 A, tp = 100 µs Symbol Symbol Wert Value SFH 400-2 SFH 400-3 SFH 401-2 SFH 401-3 Einheit Unit
Ie min Ie max
20 40
> 32 –
10 20
>16 –
mW/sr mW/sr
Ie typ.
300
320
120
190
mW/sr
2007-12-07
4
SFH 400, SFH 401
Radiation Characteristics, SFH 400, Irel = f (ϕ)
40 30 20 10 0 1.0
OHR01883
ϕ
50
0.8 60
0.6
70
0.4
80 90
0.2 0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Radiation Characteristics, SFH 401, Irel = f (ϕ)
40 30 20 10 0 1.0
OHR01884
ϕ
50
0.8 60
0.6
70
0.4
80 90
0.2 0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2007-12-07
5
SFH 400, SFH 401
Relative Spectral Emission Irel = f (λ)
100 %
OHRD1938
Radiant Intensity
Ie = f (IF) Ie 100 mA
OHR01037
Single pulse, tp = 20 µs
Ιe
10 2
Max. Permissible Forward Current SFH 401, IF = f (TA)
350
OHR00486
Ι e (100 mA)
Ι rel
Ι F mA 300
250 200 150
80
10 1
60
R thJC = 160 K/W
40
10
20
0
R thJA = 450 K/W 100 50
0 880
920
960
1000
nm
1060
λ
10 -1 10 -2
10 -1
10 0
A ΙF
10 1
0
0
20
40
60
80 ˚C 100 TA , TC
Forward Current IF = f (VF)
Permissible Pulse Handling Capability IF = f (τ), TC = 25 °C, RthJC = 160 K/W,duty cycle D = parameter
OHR01040
Max. Permissible Forward Current SFH 400, IF = f (TA)
ΙF
10 1 A
ΙF
10 4 mA 5 D=
OHR01937
350
OHR00395
tP tP T
ΙF
T D= 0.005 0.01 0.02 0.05 0.1
Ι F mA 300
250 200 150 R thJA = 450 K/W 100 50
10 0
typ.
max.
R thJC = 160 K/W
10 3 5
0.2 0.5
10
-1
DC
10 -2
1
1.5
2
2.5
3
3.5
4 V 4.5 VF
10 2 10 -5
10 -4
10 -3
10 -2
s
τ
10 0
0
0
20
40
60
80
100 ˚C 130 TA , TC
2007-12-07
6
SFH 400, SFH 401
Maßzeichnung Package Outlines
1. 0. 1 (0 9 (0 .043 .0 35 ) ) 1 1. 9 0. ) 43 ) .0 (0 035 . (0
SFH 400
(2.7 (0.106)) ø0.45 (0.018)
Chip position
ø4.8 (0.189) ø4.6 (0.181)
Anode = SFH 480 Cathode = SFH 216, SFH 400 (package)
2.54 (0.100) spacing
welded 5.3 (0.209) 5.0 (0.197) 14.5 (0.571) 12.5 (0.492) glass lens 7.4 (0.291) 6.6 (0.260)
ø5.6 (0.220) ø5.3 (0.209)
GEOY6314
.0 (0 1 1. 0. 9 1. 1 0. (0 9 .0 (0 43 .0 ) 35 )
43 ) 35
Anode = SFH 481 Cathode = SFH 401 (package)
SFH 401
(2.7 (0.106)) ø0.45 (0.018)
Chip position
ø4.8 (0.189) ø4.6 (0.181)
2.54 (0.100) spacing
welded 5.3 (0.209) 5.0 (0.197) 14.5 (0.571) 12.5 (0.492) glass lens 6.4 (0.252) 5.6 (0.220)
(0
.0
)
ø5.6 (0.220) ø5.3 (0.209)
GETY6091
Maße in mm (inch) / Dimensions in mm (inch).
2007-12-07
7
SFH 400, SFH 401
Lötbedingungen Soldering Conditions Wellenlöten (TTW) TTW Soldering
300 C T 250 235 C ... 260 C 2. Welle 2. wave 200 1. Welle 1. wave 150 100 C ... 130 C 100 2 K/s 50 Zwangskühlung forced cooling ca 200 K/s 5 K/s 2 K/s
(nach CECC 00802) (acc. to CECC 00802)
OHLY0598
10 s
Normalkurve standard curve Grenzkurven limit curves
0 0 50 100 150 t 200 s 250
Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-12-07 8
