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SFH4585

SFH4585

  • 厂商:

    AMSOSRAM(艾迈斯半导体)

  • 封装:

    DIP

  • 描述:

    EMITTERIR880NM100MARADIAL

  • 数据手册
  • 价格&库存
SFH4585 数据手册
GaAlAs-IR-Lumineszenzdioden (880 nm) in SMR® Gehäuse GaAlAs Infrared Emitters (880 nm) in SMR® Package SFH 4580 SFH 4585 SFH 4580 SFH 4585 Wesentliche Merkmale • • • • • GaAlAs-LED mit sehr hohem Wirkungsgrad SMR® (Surface Mount Radial) Gehäuse Für Oberflächenmontage geeignet Gegurtet lieferbar Gehäusegleich mit Fotodiode SFH 2500/ SFH 2505 • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • UL-Freigabe Anwendungen • IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern • Gerätefernsteuerungen für Gleich- und Wechsellichtbetrieb • Sensorik • Diskrete Lichtschranken • Diskrete Optokoppler Typ Type SFH 4580 SFH 4585 1) Features • • • • • Very highly efficient GaAlAs-LED SMR® (Surface Mount Radial) package Suitable for surface mounting (SMT) Available on tape and reel Same package as photodiode SFH 2500/ SFH 2505 • High reliability • Spectral match with silicon photodetectors • UL-approval Applications • IR remote control of hi-fi and TV-sets, video tape recorders, dimmers • Remote control for steady and varying intensity • Sensor technology • Discrete interrupters • Discrete optocouplers Bestellnummer Ordering Code Q62702-P1806 Q62702-P1799 Strahlstärkegruppierung 1) (IF = 100mA, tp = 20 ms) Radiant intensity grouping 1) Ie (mW/sr) ≥ 25 gemessen bei einem Raumwinkel Ω = 0.01 sr measured at a solid angle of Ω = 0.01 sr 2002-08-20 1 SFH 4580, SFH 4585 Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max. 10 mm Thermal resistance, lead length between package bottom and PC-board max. 10 mm Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA Spektrale Bandbreite bei 50% von Irel Spectral bandwidth at 50% of Irel IF = 100 m A Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Abstand Chipoberfläche bis Linsenscheitel Distance chip front to lens top Symbol Symbol λpeak Wert Value 880 Einheit Unit nm Symbol Symbol Wert Value – 40 … + 100 5 100 2.5 200 375 Einheit Unit °C V mA A mW K/W Top; Tstg VR IF IFSM Ptot RthJA ∆λ 80 nm ϕ ± 15 0.09 0.3 × 0.3 3.9 … 4.5 Grad deg. mm2 mm mm A L×B L×W H 2002-08-20 2 SFH 4580, SFH 4585 Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Ω Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Ω Kapazität Capacitance VR = 0 V, f = 1 MHz Durchlaßspannung, Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs Sperrstrom, Reverse current VR = 5 V Gesamtstrahlungsfluß, Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. Φe, Symbol Symbol Wert Value 0.6/0.5 Einheit Unit µs tr, tf Co 15 pF VF VF IR 1.50 (≤ 1.8) 3.00 (≤ 3.8) 0.01 (≤ 1) V V µA Φe 25 mW TCI – 0.5 %/K IF = 100 mA IF = 100 mA Temperature coefficient of Ie or Φe, Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von λ, IF = 100 mA Temperature coefficient of λ, IF = 100 mA TCV TCλ –2 0.25 mV/K nm/K 2002-08-20 3 SFH 4580, SFH 4585 Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstärke Radiant intensity IF = 1 A, tp = 100 µs Symbol Wert Value Einheit Unit Ie min ≥ 25 mW/sr Ie typ 225 mW/sr 2002-08-20 4 SFH 4580, SFH 4585 Relative Spectral Emission Irel = f (λ) 100 Ι rel % 80 OHR00877 Radiant Intensity Ie = f (IF ) Ie 100 mA OHR00878 Single pulse, tp = 20 µs 10 2 Ιe Ι e (100mA) 10 1 Max. Permissible Forward Current IF = f (T A ) 125 OHF01534 I F mA 100 60 10 0 75 40 10 -1 50 20 10 -2 25 0 750 10 -3 800 850 900 950 nm 1000 λ 10 0 10 1 10 2 10 3 mA 10 4 ΙF 0 0 10 20 30 40 50 60 70 80 ˚C 100 T IF = f (VF), single pulse, tp = 20 µs 10 1 OHR00881 Forward Current Permissible Pulse Handling Capability IF = f (τ), TA = 25 °C, duty cycle D = parameter 10 4 mA OHR00886 Forward Current vs. Lead Length between the Package Bottom and the PC-Board IF = f (I), TA = 25 °C 120 mA OHR00949 ΙF A ΙF 10 0 D = 0.005 0.01 0.02 0.05 10 3 0.1 0.2 Ι F 100 80 10 -1 60 0.5 10 2 DC tp 40 10 -2 D= 10 -3 tp T ΙF 20 0 1 2 3 4 5 6 V VF 8 T 10 1 -5 -4 -3 -2 10 10 10 10 10 -1 10 0 10 1 s 10 2 tp 0 0 5 10 15 20 25 mm 30 Radiation Characteristics Irel = f (ϕ) 40 30 20 10 0 1.0 OHF00300 ϕ 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2002-08-20 5 SFH 4580, SFH 4585 Maßzeichnung Package Outlines SFH 4580 7.5 (0.295) 5.5 (0.217) 2.8 (0.110) 2.4 (0.094) 3.7 (0.146) 3.3 (0.130) 2.7 (0.106) 2.4 (0.094) Chip position 4.5 (0.177) 3.9 (0.154) 2.05 (0.081) R 1.95 (0.077) ((3.2) (0.126)) ((R2.8 (0.110)) ((3.2) (0.126)) 6.0 (0.236) 5.4 (0.213) 14.7 (0.579) 13.1 (0.516) Cathode 2.54 (0.100) spacing 4.5 (0.177) 3.9 (0.154) 7.7 (0.303) 7.1 (0.280) -0.1...0.2 (-0.004...0.008) 4.8 (0.189) 4.4 (0.173) GEOY6960 SFH 4585 8.0 (0.315) 7.4 (0.291) Chip position 4.5 (0.177) 3.9 (0.154) 2.05 (0.081) R 1.95 (0.077) 15.5 (0.610) 14.7 (0.579) 2.7 (0.106) 2.4 (0.094) -0.15...0.15 (-0.006...0.006) ((3.2) (0.126)) ((R2.8 (0.110)) ((3.2) (0.126)) 6.0 (0.236) 5.4 (0.213) 2.54 (0.100) spacing Cathode 4.5 (0.177) 3.9 (0.154) 7.7 (0.303) 7.1 (0.280) 4.8 (0.189) 4.4 (0.173) GEOY6961 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2002-08-20 6 SFH 4580, SFH 4585 Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2002-08-20 7
SFH4585 价格&库存

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