VUB160-12NO2

VUB 120 / 160 Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary Data M1/O1 S1 VRRM = 1200/1600 V IdAVM = 188 A VRRM Type V VRRM Type V A6~ E6~ K6~ U1/W1 1200 VUB 120-12 NO2 1600 VUB 120-16 NO2 1200 VUB 160-12 NO2 1600 VUB 160-16 NO2 M/O 10 W U S/T 10 Symbol Rectifier Diodes Conditions TC = 80°C, rect., d = 1/3 TVJ = 45°C, TVJ = 150°C, TVJ = 45°C, TVJ = 150°C, TC = 25°C per diode TVJ = 25°C to 150°C Continuous TC = 25°C, DC TC = 80°C, DC TC = 80°C, d = 0.5 tp = Pulse width limited by TVJM TC = 25°C Fast Recovery Diode Maximum Ratings 1200/1600 Features • Soldering connections for PCB mounting • Isolation voltage 3600 V~ • Ultrafast diode • Convenient package outline l UL registered E 72873 • Case and potting UL94 V-0 Applications • Drive Inverters with brake system Advantages • • • • 2 functions in one package Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability VRRM IdAVM IFSM I2t Ptot VCES VGE 188 1100 960 6050 4610 160 VUB 120 1200 ± 20 140 100 95 280 570 1200 34 48 200 180 140 -40...+150 150 -40...+125 VUB160 1200 ± 20 177 125 95 350 690 V A A A A A W V V A A A A W V A A A A W °C °C °C V~ V~ Nm lb.in. mm mm m/s2 g t = 10 ms, VR = 0 V t = 10 ms, VR = 0 V t = 10 ms, VR = 0 V t = 10 ms, VR = 0 V ICM Ptot VRRM IFAV IFRMS IFSM Ptot TVJ TVJM Tstg VISOL Md dS dA a Weight Module IGBT IC25 IC80 TC = 80°C, rect. d = ½ TC = 80°C, rect. d = ½ TVJ = 45°C, TVJ = 150°C, TC = 25°C t = 10 ms t = 10 ms Dimensions in mm (1 mm = 0.0394") 50/60 Hz IISOL ≤ 1 mA Mounting torque t = 1 min t=1s (M5) (10-32 UNF) 3000 3600 2-2.5 18-22 12.7 9.4 50 80 Creep distance on surface Strike distance in air Maximum allowable acceleration typ. Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. 411 © 2004 IXYS All rights reserved 1-2 VUB 120 / 160 Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 150°C TVJ = 25°C 0.3 5 1.46 0.87 4.0 mA mA V V mΩ K/W 6.5 0.2 1 VUB 120 VUB 160 IR VF VT0 rT RthJC RthCH VBR(CES) VGE(th) ICES VCEsat tSC (SCSOA) Rectifier Diodes Rectifier Diodes VR = VRRM, VR = VRRM, IF = 150 A, For power-loss calculations only TVJ = 150°C per diode 0.2 VGS = 0 V, IC = 1 mA IC = 4 mA VCE = 1200 V, TVJ = 25°C TVJ = 125°C VGE = 15 V, IC = 50 A IC = 75 A 1200 4.5 0.6 K/W V V mA mA V V µs 2.1 2.2 10 VGE = 15 V, VCE = 900 V, TVJ = 125°C, RG = 15/10 Ω, non repetitive VGE = 15 V, VCE = 1200 V, TVJ = 125°C, Clamped Inductive load, L = 100 µH RG = 15 Ω VUB 120 RG = 10 Ω VUB 160 VCE = 25 V, f = 1 MHz, VGE = 0 V VUB 120 VUB 160 RBSOA Cies td(on) td(on) td(off) td(off) Eon Eoff RthJC RthCH IR VF VT0 rT IRM trr RthJC RthCH IGBT 150 200 5.7 7.4 170 330 680 750 11 12 8 10 A A nF nF ns ns ns ns mJ mJ mJ mJ VUB 120 VCE = 600 V, IC = 50/75 A VGE = 15 V, RG = 15/10 Ω Inductive load; L = 100 µH TVJ = 125°C VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 0.1 0.1 0.75 0.22 K/W 0.18 K/W K/W K/W 0.5 1 2.7 1.3 15 mA mA V V mΩ A ns Fast Recovery Diode VR = VRRM, TVJ = 25°C TVJ = 125°C IF = 30 A, TVJ = 25°C For power-loss calculations only TVJ = 150°C IF = 50 A, -diF/dt = 100 A/µs, VR = 100 V IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V 8 40 0.3 12 60 0.9 K/W K/W IXYS reserves the right to change limits, test conditions and dimensions. 2-2 © 2004 IXYS All rights reserved 411