VUO125-18NO7

VUO 125 Three Phase Rectifier Bridge IdAVM = 166 A VRRM = 1200-1800 V VRSM V 1200 1400 1600 1800 VRRM V 1200 1400 1600 1800 Type ~ ~ ~ + ~ ~ - + VUO 125-12NO7 VUO 125-14NO7 VUO 125-16NO7 VUO 125-18NO7* – * delivery time on request ~ Maximum Ratings 166 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1800 1950 1600 1800 16200 16000 12800 13600 -40...+150 150 -40...+150 A A A A A A2s A2s As A2s °C °C °C V~ V~ Nm lb.in. Nm lb.in. g 2 Symbol IdAVM IFSM Test Conditions TC = 85°C, module TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 Features Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 72873 q q q q q q I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors q q q q TVJ TVJM Tstg VISOL Md 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s 2500 3000 5 ± 15 % 44 ± 15 % 5 ± 15 % 44 ± 15 % 225 Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling q q q Mounting torque (M5) Terminal connection torque (M5) Dimensions in mm (1 mm = 0.0394") Weight Symbol IR VF VT0 rT RthJC RthJH typ. Test Conditions VR = VRRM; VR = VRRM; IF = 150 A; TVJ = 25°C TVJ = TVJM TVJ = 25°C Characteristic Values £ £ £ 0.3 8.0 1.3 0.8 3 mA mA V V mW K/W K/W K/W K/W For power-loss calculations only per diode per module per diode per module 0.83 0.138 1.13 0.188 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-2 VUO 125 I2t Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 3 I2t versus time (1-10 ms) per diode Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at case temperature Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.014 0.067 0.139 0.61 ti (s) 0.011 0.094 0.28 0.7 Constants for ZthJK calculation: i 1 2 3 4 5 Fig. 6 Transient thermal impedance per diode © 2000 IXYS All rights reserved Rthi (K/W) 0.014 0.067 0.139 0.61 0.3 ti (s) 0.011 0.094 0.28 0.7 4.2 2-2