VBE100-06NO7

VBE 100-06NO7 Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) in ECO-PAC 2 Preliminary data sheet IdAV = 100 A VRRM = 600 V trr = 35 ns VRSM V 600 VRRM V 600 Typ PS16 ~L 9 ~ K10 VBE 100-06NO7 EG 1 Pin arangement see outlines B3 Symbol IdAV ① IdAVM IFSM Conditions TC = 85°C, module TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 100 100 600 640 520 555 1800 1720 1350 1295 -40...+150 150 -40...+125 A A A A A A A2 s A2 s A2 s A2 s °C °C °C V~ V~ Features • Package with DCB ceramic base plate in low profile • Isolation voltage 3000 V~ • Planar passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • Supplies for DC power equipment • Input and output rectifiers for high frequency • Battery DC power supplies • Field supply for DC motors Advantages • Space and weight savings • Improved temperature and power cycling capability • Small and light weight • Low noise switching Dimensions in mm (1 mm = 0.0394") I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthCH IRM trr a dS dA 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 3000 3600 Mounting torque (M4) typ. Conditions VR = VRRM VR = VRRM IF = 60 A TVJ = 25°C TVJ = TVJM TVJ = 25°C 1.5-2/14-18 Nm/lb.in. 24 g Characteristic Values typ. max. 0.1 2.5 2.04 mA mA V for power-loss calculations only per diode; DC current per diode, DC current, typ. IF = 130 A, -diF/dt = 100 A/µs VR = 100 V, TVJ = 100°C IF = 1 A; -di/dt = 300 A/µs; VR = 30 V, TVJ = 25°C Max. allowable acceleration creeping distance on surface (pin to heatsisnk) strike distance in air (pin to heatsisnk) 1.09 V 4.3 mΩ 0.8 K/W 0.2 K/W 6.8 35 50 11.2 9.7 A ns m/s2 mm mm Data according to IEC 60747 refer to a single diode unless otherwise stated ① for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 1-2 241 VBE 100-06NO7 160 A 140 IF 120 100 80 60 40 20 0 0 1 VF DWLP55-06 4000 nC TVJ = 25°C TVJ = 100°C TVJ = 150°C TVJ = 100°C VR = 300 V 80 A 60 IRM TVJ = 100°C VR = 300 V 3000 Qr 2000 IF = 120 A IF = 60 A IF = 30 A IF = 120 A IF = 60 A IF = 30 A 40 1000 20 2 V 0 100 DWLP55-06 A/µs 1000 -diF/dt 0 0 200 400 DWLP55-06 600 A/µs 1000 800 -diF/dt B3 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 140 ns 130 TVJ = 100°C VR = 300 V Fig. 3 Peak reverse current IRM versus -diF/dt 20 V VFR 15 VFR 2.0 1.6 µs tfr 1.2 1.5 Kf 1.0 IRM trr 120 110 100 IF = 120 A IF = 60 A IF = 30 A trr 10 TVJ = 100°C IF = 60 A 0.8 0.5 Qr DWLP55-06 5 90 80 0 40 80 120 C 160 TVJ 0 200 400 600 -diF/dt DWLP55-06 0.4 0.0 800 A/µs 1000 0 0 200 400 0.0 600 A/µs 1000 800 diF/dt DWLP55-06 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W 0.1 ZthJC 0.01 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt 0.001 0.0001 0.00001 VUE 130-06 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Typical transient thermal resistance junction to case NOTE: Fig. 2 to Fig. 6 shows typical values IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 2-2 241