VBO30-18NO7

VBO 30 Single Phase Rectifier Bridge IdAVM = 35 A VRRM = 1200-1800 V VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type + + - VBO VBO VBO VBO VBO 30-08NO7 30-12NO7 30-14NO7 30-16NO7 30-18NO7* ~ ~ – ~ ~ * delivery time on request Symbol IdAVM IFSM Conditions TC = 85°C, module TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 1.5 13 1.5 13 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 35 400 440 360 400 800 810 650 670 -40...+150 150 -40...+150 2500 3000 ±15% ±15% ±15% ±15% 135 A A A A A A2s A2s As A2s °C °C °C V~ V~ Nm lb.in. Nm lb.in. g 2 Features • Package with screw terminals • Isolation voltage 3000 V~ • Planar passivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 72873 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Mounting torque (M4) Terminal connection torque (M4) Weight Symbol IR VF VT0 rT RthJC RthJK typ. Conditions VR = VRRM; VR = VRRM; IF = 150 A; TVJ = 25°C TVJ = TVJM TVJ = 25°C Characteristic Values ≤ ≤ ≤ 0.3 5.0 2.2 0.85 12 2.8 0.7 3.4 0.85 mA mA V V mΩ K/W K/W K/W K/W For power-loss calculations only TVJ = TVJM per per per per diode; DC current module diode; DC current module Data according to IEC 60747 refer to a single diode unless otherwise stated. 420 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 1-2 VBO 30 3 200 [A] 1:TVJ= 150°C 2:TVJ= 25°C 150 I F(OV) -----I FSM 10 IFSM (A) TVJ=45°C TVJ=150°C 360 2 As 1.6 400 T VJ=45°C 1.4 TVJ=1 50°C 1.2 100 1 0 VRRM 50 IF 0 1.0 1.5 2.0 VF[V] 2.5 3.0 1 2 0.8 1/2 V RRM 0.6 1 VRRM 0.4 100 101 t[ms] 102 103 10 2 1 2 4 t [ms ] 6 10 Fig. 1 Forward current versus voltage drop per diode [W ] 80 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration TC 50 55 60 65 70 75 80 85 90 95 100 105 Fig. 3 ∫i2dt versus time (1-10ms) per diode or thyristor 40 [A] DC sin.180° rec.120° rec.60° rec.30° PSB 35 0.29 0.01 0.57 = RTHCA [K/W] 30 60 1.12 20 40 DC si n .1 8 0 ° re c .1 2 0 ° r e c. 60 ° r e c. 30 ° 10 IF AV M 30 0 [A ] 2.23 110 115 120 20 5.57 125 130 135 140 145 10 P V TO T 0 I dAV 0 50 100 T (°C) C 150 200 °C 150 50 Tamb 100 [K ] 15 0 Fig. 4 Power dissipation versus direct output current and ambient temperature 5 K/W Fig.5 Maximum forward current at case temperature 4 3 Z thJC Z thJK 2 1 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. 420 2-2 © 2004 IXYS All rights reserved