VBO50-08NO7

VBO 50 Single Phase Rectifier Bridge IdAVM = 50 A VRRM = 800-1800 V + VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type + - VBO VBO VBO VBO VBO 50-08NO7 50-12NO7 50-14NO7 50-16NO7 50-18NO7* ~ ~ – ~ ~ * delivery time on request Symbol IdAVM IFSM Conditions TC = 64°C, module TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 50 750 820 670 740 2800 2820 2250 2300 -40...+150 150 -40...+150 A A A A A A2s A2s A2s A2s °C °C °C V~ V~ Nm lb.in. Nm lb.in. g Features • Package with screw terminals • Isolation voltage 3000 V~ • Planar passivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 72873 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000 5 44 3 26 ±15% ±15% ±15% ±15% 260 Mounting torque (M5) Terminal connection torque (M5) Weight Symbol IR VF VT0 rT RthJC RthJK typ. Conditions VR = VRRM; VR = VRRM; IF = 150 A; TVJ = 25°C TVJ = TVJM TVJ = 25°C Characteristic Values ≤ ≤ ≤ 0.3 10.0 1.6 0.85 8 2.6 0.65 2.84 0.71 mA mA V V mΩ K/W K/W K/W K/W 420 For power-loss calculations only TVJ = TVJM per per per per diode; DC current module diode; DC current module Data according to IEC 60747 refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 1-2 VBO 50 200 [A] 1:TVJ= 150°C 2:TVJ= 25°C 150 1.4 1.2 3 TVJ=45°C IF(OV) -----IFSM IFSM (A) TVJ=45°C TVJ=150°C 750 670 4 10 2 As 1.6 100 1 0 V RRM 10 TVJ=150°C 50 0.8 1/2 VRRM 0.6 1 V RRM IF 0 1 2 0.4 10 2 1 2 4 t [ms] 6 10 0.5 1 1.5 VF[V] 2 2.5 10 0 10 1 t[ms] 10 2 10 3 Fig. 1 Forward current versus voltage drop per diode 100 [W] 80 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 85 Fig. 3 ∫i2dt versus time (1-10ms) per diode or thyristor 70 [A] PSB 55 0.6 0.35 0.85 = RTHCA [K/W] TC 90 95 100 105 50 DC sin.180° rec.120° re c.60° .30° 60 1.35 110 115 120 40 DC sin.180° rec.120° rec.60° rec.30° 10 IFAVM 30 0 [A] 2.35 30 125 130 20 PVTOT 0 5.35 135 140 145 150 10 IdAV 0 50 100 TC(°C) 150 200 °C 50 Tamb 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 4 K/W 3 Z thJK Z thJC 2 1 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. 420 2-2 © 2004 IXYS All rights reserved