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HS3MB

HS3MB

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    SMB

  • 描述:

    HS3MB

  • 数据手册
  • 价格&库存
HS3MB 数据手册
HS3AB - HS3MB 3.0 AMPS. High Efficient Surface Mount Rectifiers SMB/DO-214AA .083(2.10) .077(1.95) .147(3.73) .137(3.48) Features Glass passivated junction chip. For surface mounted application Low forward voltage drop Low profile package Built-in stain relief, ideal for automatic placement Fast switching for high efficiency High temperature soldering: o 260 C/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V0 .187(4.75) .167(4.25) .012(.31) .006(.15) .103(2.61) .078(1.99) .012(.31) .006(.15) .056(1.41) .035(0.90) .209(5.30) .201(5.10) .008(.20) .004(.10) Mechanical Data Cases: Molded plastic Terminals: Pure tin plated, lead free Polarity: Indicated by cathode band Packing: 16mm tape per EIA STD RS-481 Weight: 0.21 gram Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 3.0A Maximum DC Reverse Current @ TA =25 C o at Rated DC Blocking Voltage @ TA=125 C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Operating Temperature Range o Symbol HS VRRM VRMS VDC I(AV) IFSM VF IR Trr Cj TJ HS HS 3AB 3BB 3DB HS 3FB HS 3GB HS 3JB HS HS 3KB 3MB Units V V V A A 50 35 50 100 200 300 400 600 800 1000 70 140 210 280 420 560 700 100 200 300 400 600 800 1000 3.0 150 1.0 1.3 10 250 50 80 -55 to +150 -55 to +150 75 50 1.7 V uA uA nS pF o C o C Storage Temperature Range TSTG 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Notes: 2. Measured at 1 MHz and Applied VR=4.0 Volts. 3. Measured on P.C.Board with 0.6” x 0.6” (16mm x 16mm) Copper Pad Area. Version: A06 RATINGS AND CHARACTERISTIC CURVES (HS3AB THRU HS3MB) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 3.0 FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 AVERAGE FORWARD CURRENT. (A) 2.5 INSTANTANEOUS REVERSE CURRENT. ( A) 2.0 100 Tj=125 0C 1.5 1.0 10 Tj=25 0C 0.5 0 0 25 50 75 100 125 O 150 175 AMBIENT TEMPERATURE. ( C) 1 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 300 PEAK FORWARD SURGE CURRENT. (A) 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 200 100 100 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0 1 10 100 1000 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD CURRENT. (A) FIG.4- TYPICAL JUNCTION CAPACITANCE 175 150 JUNCTION CAPACITANCE.(pF) 125 100 75 50 25 0 0.1 HS 1 HS HS 3AB -HS -HS 3G B 3JB 3M 0.1 B 0.01 0.5 1 2 5 10 20 50 100 200 500 1000 REVERSE VOLTAGE. (V) 0 0.2 0.4 0.6 0.8 1.0 HS 3A BHS 3F B 10 3 G B B M S3 -H JB S3 H 1.2 1.4 1.6 1.8 FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A DUT (-) PULSE GENERATOR (NOTE 2) OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr (+) 50Vdc (approx) (-) 1W NON INDUCTIVE NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06
HS3MB 价格&库存

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