BAS321J
High-voltage switching diode
23 March 2018
Product data sheet
1. General description
High-voltage switching diode in a very small SOD323F (SC-90) flat lead Surface-Mounted Device
(SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
High switching speed: trr ≤ 50 ns
Low leakage current: IR ≤ 100 nA
High reverse voltage VR ≤ 200 V
Low capacitance: Cd ≤ 2 pF
Very small SMD plastic package
AEC-Q101 qualified
3. Applications
•
•
•
•
High-speed switching
General-purpose switching
Voltage clamping
Reverse polarity protection
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
IF
forward current
VR
Min
Typ
Max
Unit
-
-
250
mA
reverse voltage
-
-
200
V
VRRM
repetitive peak reverse
voltage
-
-
250
V
VF
forward voltage
IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
-
-
1.25
V
IR
reverse current
VR = 200 V; pulsed; Tj = 25 °C
-
-
100
nA
trr
reverse recovery time
IF = 30 mA; IR = 30 mA; RL = 100 Ω;
IR(meas) = 3 mA; Tj = 25 °C
-
-
50
ns
[1]
Conditions
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
BAS321J
Nexperia
High-voltage switching diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
Cathode
2
A
Anode
Simplified outline
1
Graphic symbol
2
K
A
aaa-028035
SC-90 (SOD323F)
6. Ordering information
Table 3. Ordering information
Type number
BAS321J
Package
Name
Description
Version
SC-90
plastic, surface-mounted package; 2 leads; 1.7 mm x 1.25 mm x
0.7 mm body
SOD323F
7. Marking
Table 4. Marking codes
Type number
Marking code
BAS321J
ED
BAS321J
Product data sheet
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BAS321J
Nexperia
High-voltage switching diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC60134).
Symbol
Parameter
VRRM
Conditions
Min
Max
Unit
repetitive peak reverse
voltage
-
250
V
VR
reverse voltage
-
200
V
IF
forward current
-
250
mA
IFSM
non-repetitive peak
forward current
tp = 50 µs; Tj(init) = 25 °C; square wave
-
13
A
tp = 100 µs; Tj(init) = 25 °C; square wave
-
9
A
tp = 10 ms; Tj(init) = 25 °C; square wave
-
3
A
-
625
mA
[1]
-
420
mW
[2]
-
660
mW
[1]
IFRM
repetitive peak forward
current
tp ≤ 0.5 ms; δ ≤ 0.25
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Rth(j-sp)
[1]
[2]
[3]
Conditions
Min
Typ
Max
Unit
[1]
-
-
300
K/W
[2]
-
-
190
K/W
[3]
-
-
40
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Soldering point of cathode tab.
BAS321J
Product data sheet
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BAS321J
Nexperia
High-voltage switching diode
aaa-028256
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.50
0.25
0.75
0.33
0.20
0.10
0.05
10
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-028157
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.50
0.25
0.75
0.33
0.20
0.10
0.05
10
0.02
0.01
0
1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
10-1
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BAS321J
Product data sheet
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BAS321J
Nexperia
High-voltage switching diode
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
-
-
1
V
IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
-
-
1.25
V
VR = 200 V; pulsed; Tj = 25 °C
-
-
100
nA
VR = 200 V; pulsed; Tj = 150 °C
-
-
100
µA
IR
reverse current
Cd
diode capacitance
VR = 0 V; f = 1 MHz; Tj = 25 °C
-
-
2
pF
trr
reverse recovery time
IF = 30 mA; IR = 30 mA; RL = 100 Ω;
IR(meas) = 3 mA; Tj = 25 °C
-
-
50
ns
aaa-028258
0.5
IF
(A)
aaa-028259
1
IF
(A)
0.4
10-1
0.3
10-2
0.2
0.1
(1) (2) (3) (4)
10-3
(1)
(2)
(3)
(4)
0
0
0.5
1.0
1.5
VF (V)
2.0
10-4
(1) Tamb = 150° C
(2) Tamb = 85° C
(3) Tamb = 25° C
(4) Tamb = -40° C
Fig. 3.
Product data sheet
0.25
0.50
0.75
1.00
1.25
1.50 1.75
VF (V)
(1) Tj = 150° C
(2) Tj = 85° C
(3) Tj = 25° C
(4) Tj = -40° C
Forward current as a function of forward
voltage; typical values; (linear scale)
BAS321J
0
Fig. 4.
Forward current as a function of forward
voltage; typical values; (logarithmic scale)
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BAS321J
Nexperia
High-voltage switching diode
aaa-028260
10-4
IR
(A)
10-5
(1)
10-6
(2)
aaa-028261
0.6
Cd
(pF)
0.4
10-7
10-8
(3)
0.2
10-9
10-10
10-11
(4)
0
40
80
120
0
160
200
VR (V)
(1) Tamb = 150° C
(2) Tamb = 85° C
(3) Tamb = 25° C
(4) Tamb = -40° C
Fig. 5.
0
2
4
6
8
VR (V)
10
f = 1 MHz
Tj = 25 °C.
Fig. 6.
Reverse current as a function of reverse
voltage; typical values
Diode capacitance as a function of reverse
voltage; typical values.
aaa-028262
102
IFSM
(A)
10
1
10-2
10-1
1
tp (ms)
10
Based on square wave currents
Tj(init) = 25 °C prior to surge
Fig. 7.
Non-repetitive peak forward current as a function of pulse duration; maximum value
BAS321J
Product data sheet
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BAS321J
Nexperia
High-voltage switching diode
11. Test information
tr
D.U.T.
RS = 50 Ω
IF
tp
t
10 %
+ IF
SAMPLING
OSCILLOSCOPE
trr
t
Ri = 50 Ω
V = VR + IF × RS
mga881
(1)
90 %
VR
input signal
output signal
(1) IR = 3 mA
Fig. 8.
Reverse recovery time test circuit and waveforms
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
1.35
1.15
0.80
0.65
0.5
0.3
1
2.7
2.3
1.8
1.6
2
0.40
0.25
0.25
0.10
Dimensions in mm
Fig. 9.
04-09-13
Package outline SC-90 (SOD323F)
BAS321J
Product data sheet
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BAS321J
Nexperia
High-voltage switching diode
13. Soldering
3.05
2.2
2.1
solder lands
solder resist
1.65 0.95
0.5 (2×)
0.6 (2×)
solder paste
occupied area
0.5
(2×)
0.6
(2×)
Dimensions in mm
sod323f_fr
Fig. 10. Reflow soldering footprint for SC-90 (SOD323F)
BAS321J
Product data sheet
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BAS321J
Nexperia
High-voltage switching diode
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BAS321J v.1
20180323
Product data sheet
-
-
BAS321J
Product data sheet
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BAS321J
Nexperia
High-voltage switching diode
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
15. Legal information
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
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Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Nexperia does not give any representations or warranties as to the accuracy
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Short data sheet — A short data sheet is an extract from a full data sheet
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BAS321J
Product data sheet
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
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Customers should provide appropriate design and operating safeguards to
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without Nexperia’ warranty of the product
for such automotive applications, use and specifications, and (b) whenever
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BAS321J
Nexperia
High-voltage switching diode
customer uses the product for automotive applications beyond Nexperia’
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Notice: All referenced brands, product names, service names and
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BAS321J
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BAS321J
Nexperia
High-voltage switching diode
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 5
11. Test information..........................................................7
12. Package outline.......................................................... 7
13. Soldering..................................................................... 8
14. Revision history..........................................................9
15. Legal information..................................................... 10
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Nexperia B.V. 2018. All rights reserved
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Date of release: 23 March 2018
BAS321J
Product data sheet
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