BC807-16HR

BC807H series 45 V, 500 mA PNP general-purpose transistors Rev. 1 — 5 March 2019 Product data sheet 1. Product profile 1.1. General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package BC807-16H NPN comlement Nexperia JEDEC SOT23 TO-236AB BC817K-16H BC807-25H BC817K-25H BC807-40H BC817K-40H 1.2. Features and benefits • • • Three current gain selections High-temperature applications up to 175 °C AEC-Q101 qualified 1.3. Applications • General-purpose switching and amplification 1.4. Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -45 V IC collector current - - -500 mA ICM peak collector current single pulse; tp ≤ 1 ms - - -1 A hFE DC current gain VCE = -1 V; IC = -100 mA [1] BC807-16H [1] 100 - 250 BC807-25H [1] 160 - 400 BC807-40H [1] 250 - 600 pulsed; tp ≤ 300 μs; δ ≤ 0.02 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors 2. Pinning information Table 3. Pinning Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline Graphic symbol 3 C B E 1 sym132 2 3. Ordering information Table 4. Ordering information Type number Package BC807-16H Name Description Version TO-236AB plastic, surface-mounted package; 3 leads SOT23 BC807-25H BC807-40H 4. Marking Table 5. Marking Type number Marking code BC807-16H [1] 6S% BC807-25H [1] 6T% BC807-40H [1] 6U% [1] % = placeholder for manufacturing site code BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 2 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -50 V VCEO collector-emitter voltage open base - -45 V VEBO emitter-base voltage open collector - -7 V IC collector current - -500 mA ICM peak collector current single pulse; tp ≤ 1 ms - -1 A IBM peak base current single pulse; tp ≤ 1 ms - -200 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 320 mW [2] - 440 mW [3] - 460 mW [4] - 540 mW Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] [2] [3] [4] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm . Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin plated and standard footprint. 2 Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated; mounting pad for collector 1 cm. aaa-029554 600 (1) Ptot (mW) (2) (3) 400 (4) 200 0 -75 1. 2. 3. 4. Fig. 1. 25 125 Tamb (°C) 225 2 FR4 PCB; 4-layer copper, 1cm FR4 PCB; 4-layer copper, standard footprint 2 FR4 PCB; single-sided copper, 1cm FR4 PCB; single-sided copper, standard footprint Power derating curves BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 3 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors aaa-029555 -10 IC (A) -1 tp = 100 µs tp = 1 ms -10-1 tp = 10 ms tp = 100 ms -10-3 -10-2 tp = 1 s DC; FR4 PCB, 4-layer copper; collector mounting pad 1 cm2 -10-2 -10-1 -1 DC -10 -102 VCE (V) -103 FR4 PCB; single-sided copper; standard footprint Tamb = 25 °C Fig. 2. Safe operating area; junction to ambient; continous and peak collector currents as a funtion of collecoremitter voltage BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 4 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors 6. Thermal characteristics Table 7. Thermal characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air [1] Min Typ Max Unit - - 470 K/W 340 K/W [2] [3] [4] R(j-sp) [1] [2] [3] [4] thermal resistance from junction to solder point 325 K/W - - 280 K/W - - 110 K/W Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm . Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated and standard footprint. 2 Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated; mounting pad for collector 1 cm . aaa-029556 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.50 0.20 0.10 0.05 10 1 0.02 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB; single-sided copper; tin-plated and standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-029557 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm Fig. 4. 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 5 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors aaa-029558 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB; 4-layer copper; tin-plated and standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-029559 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 2 FR4 PCB; 4-layer copper; tin-plated; mounting pad for collector 1 cm Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 6 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)CBO collector-base breakdown voltage IC = -100 µA; IE = 0 A -50 - - V V(BR)CEO collector-emitter breakdown voltage IC = -10 mA; IB = 0 A -45 - - V V(BR)EBO emitter-base breakdown voltage IE = -100 µA; IC = 0 A -7 - - V ICBO collector-base cut-off current VCB = -25 V; IE = 0 A - - -100 nA VCB = -25 V; IE = 0 A; Tj = 150 °C - - -5 μA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A - - -100 nA hFE DC current gain [1] 100 - 250 BC807-25H [1] 160 - 400 BC807-40H [1] 250 - 600 BC807-16H VCE = -1 V; IC = -100 mA DC current gain VCE = -1 V; IC = -500 mA [1] 40 - - VCEsat collector-emitter saturation voltage IC = -500 mA; IB = -50 mA [1] - - -700 mV VBEsat base-emitter saturation IC = -500 mA; IB = -50 mA voltage [1] -1.2 V VBE base-emitter voltage VCE = -1 V; IC = -500 mA [1] - - -1.2 V fT transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz 80 - - MHz Cc collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - 7 - pF Ce emitter capacitance VEB = -0.5 V; IC = ic = 0 A; f = 1 MHz [1] BC807-16H 50 pf BC807-25H 45 pF BC807-40H 37 pF pulsed; tp ≤ 300 μs; δ ≤ 0.02 BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 7 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors aaa-029560 400 aaa-027433 200 hFE hFE (1) 300 150 (2) (3) 200 (4) (5) (1) 100 (6) 100 (7) 0 -10-1 (2) 50 (8) -1 (3) -10 -102 IC (mA) VCE = -1 V (1) Tamb = 175 °C (2) Tamb = 150 °C (3) Tamb = 125 °C (4) Tamb = 100 °C (5) Tamb = 85 °C (6) Tamb = 25 °C (7) Tamb = -40 °C (8) Tamb = -55 °C Fig. 7. -1 -10 -102 IC (mA) -103 Tamb = 25 °C (1) VCE = -5 V (2) VCE = -2 V (3) VCE = -1 V Fig. 8. BC807-16H: DC current gain as a function of collector current; typical values BC807-16H: DC current gain as a function of collector current; typical values aaa-029561 -1.2 aaa-027435 -1 VBE (V) VBE (V) -0.9 -0.8 (1) (2) (3) -0.4 (2) (3) -0.7 (6) (5) 0 -10-1 (1) -0.8 (4) (8) (7) -0.6 -1 -10 -102 IC (mA) -103 VCE = -1 V (1) Tamb = -55 °C (2) Tamb = -40 °C (3) Tamb = 25 °C (4) Tamb = 85 °C (5) Tamb = 100 °C (6) Tamb = 125 °C (7) Tamb = 150 °C (8) Tamb = 175 °C Fig. 9. 0 -10-1 -103 -0.5 -10-1 -1 -10 -102 IC (mA) -103 Tamb = 25 °C (1) VCE = -1 V (2) VCE = -2 V (3) VCE = -5 V Fig. 10. BC807-16H: Base-emitter voltage as a function of collector current; typical values BC807-16H: Base-emitter voltage as a function of collector current; typical values BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 8 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors aaa-029562 -1.2 aaa-027437 -1 VBEsat (V) VBEsat (V) -0.9 -0.8 (2) (1) (3) -0.4 (1) (2) (3) (4) -0.8 (4) -0.7 (6) (5) (8) (7) -0.6 0 -10-1 -1 -10 -102 IC (mA) -103 IC / IB = 10 (1) Tamb = -55 °C (2) Tamb = -40 °C (3) Tamb = 25 °C (4) Tamb = 85 °C (5) Tamb = 100 °C (6) Tamb = 125 °C (7) Tamb = 150 °C (8) Tamb = 175 °C -0.5 -10-1 -1 -10 -102 IC (mA) -103 Tamb = 25 °C (1) IC / IB = 10 (2) IC / IB = 20 (3) IC / IB = 50 (4) IC / IB = 100 Fig. 12. BC807-16H: Base-emitter saturation voltage as a function of collector current; typical values Fig. 11. BC807-16H: Base-emitter saturation voltage as a function of collector current; typical values aaa-029563 -1 aaa-027439 -1 VCEsat (V) VCEsat (V) -10-1 -10-1 (1) (1) (2) (2) (3) (4) (3) (4) -10-2 -10-1 -1 IC / IB = 10 (1) Tamb = 175 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = -40 °C -10 -102 IC (mA) -103 -10-2 -10-1 -1 -10 -102 IC (mA) -103 Tamb = 25 °C (1) IC / IB = 100 (2) IC / IB = 50 (3) IC / IB = 20 (4) IC / IB = 10 Fig. 13. BC807-16H: Collector-emitter saturation voltage Fig. 14. BC807-16H: Collector-emitter saturation voltage as a function of collector current; typical values as a function of collector current; typical values BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 9 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors aaa-027440 -1.0 IB (mA) = -15.0 IC (A) -13.5 -12.0 -0.8 aaa-027441 25 Cc (pF) -10.5 20 -9.0 -7.5 -0.6 15 -6.0 -4.5 -0.4 -1.5 -0.2 0 10 -3.0 0 -1 -2 -3 -4 VCE (V) 5 -5 0 Tamb = 25 °C Fig. 15. BC807-16H: Collector current as a function of collector-emitter voltage; typical values aaa-027442 70 Ce (pF) 60 0 -10 -20 -30 -40 -50 VCB (V) f = 1 MHz Tamb = 25 °C Fig. 16. BC807-16H: Collector capacitance as a function of collector-base voltage; typical values aaa-027443 103 fT (MHz) 50 40 (1) 102 30 (2) 20 10 0 0 -1 -2 -3 -4 VEB (V) -5 f = 1 MHz Tamb = 25 °C Fig. 17. BC807-16H: Emitter capacitance as a function of emitter-base voltage; typical values 10 -1 -10 -102 IC (mA) -103 f = 1 MHz Tamb = 25 °C (1) VCE = -5 V (2) VCE = -1 V Fig. 18. BC807-16H: Transition frequency as a function of collector current; typical values BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 10 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors aaa-029564 600 hFE hFE (1) (2) 300 (3) 400 (5) aaa-027445 400 (4) (1) (2) (3) 200 (6) 200 (7) 0 -10-1 100 (8) -1 -10 -102 IC (mA) 0 -10-1 -103 VCE = -1 V (1) Tamb = 175 °C (2) Tamb = 150 °C (3) Tamb = 125 °C (4) Tamb = 100 °C (5) Tamb = 85 °C (6) Tamb = 25 °C (7) Tamb = -40 °C (8) Tamb = -55 °C -1 -10 -102 IC (mA) -103 Tamb = 25 °C (1) VCE = -5 V (2) VCE = -2 V (3) VCE = -1 V Fig. 20. BC807-25H: DC current gain as a function of collector current; typical values Fig. 19. BC807-25H: DC current gain as a function of collector current; typical values aaa-029565 -1.2 aaa-027447 -1.0 VBE (V) VBE (V) (1) -0.9 -0.8 (1) (2) (3) (2) -0.8 (4) -0.7 (3) -0.4 (6) (5) (8) (7) -0 -10-1 -1 -0.6 -10 -102 IC (mA) -103 VCE = -1 V (1) Tamb = -55 °C (2) Tamb = -40 °C (3) Tamb = 25 °C (4) Tamb = 85 °C (5) Tamb = 100 °C (6) Tamb = 125 °C (7) Tamb = 150 °C (8) Tamb = 175 °C -0.5 -10-1 -1 -10 -102 IC (mA) -103 Tamb = 25 °C (1) VCE = -1 V (2) VCE = -2 V (3) VCE = -5 V Fig. 22. BC807-25H: Base-emitter voltage as a function of collector current; typical values Fig. 21. BC807-25H: Base-emitter voltage as a function of collector current; typical values BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 11 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors aaa-029566 -1.2 aaa-027449 -1.0 VBEsat (V) VBEsat (V) -0.9 -0.8 (3) -0.4 (3) (4) -0.8 (4) -0.7 (6) (5) (8) (7) 0 -10-1 (1) (2) (2) (1) -0.6 -1 -10 -102 IC (mA) -103 IC / IB = 10 (1) Tamb = -55 °C (2) Tamb = -40 °C (3) Tamb = 25 °C (4) Tamb = 85 °C (5) Tamb = 100 °C (6) Tamb = 125 °C (7) Tamb = 150 °C (8) Tamb = 175 °C -0.5 -10-1 -1 -10 -102 IC (mA) -103 Tamb = 25 °C (1) IC / IB = 10 (2) IC / IB = 20 (3) IC / IB = 50 (4) IC / IB = 100 Fig. 24. BC807-25H: Base-emitter saturation voltage as a function of collector current; typical values Fig. 23. BC807-25H: Base-emitter saturation voltage as a function of collector current; typical values aaa-029567 -1 aaa-027451 -1 VCEsat (V) VCEsat (V) -10-1 (1) (2) -10-1 (3) (4) (1) -10-2 (2) (3) (4) -10-3 -10-1 -1 IC / IB = 10 (1) Tamb = 175 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = -40 °C -10 -102 IC (mA) -103 -10-2 -10-1 -1 -10 -102 IC (mA) -103 Tamb = 25 °C (1) IC / IB = 100 (2) IC / IB = 50 (3) IC / IB = 20 (4) IC / IB = 10 Fig. 25. BC807-25H: Collector-emitter saturation voltage Fig. 26. BC807-25H: Collector-emitter saturation voltage as a function of collector current; typical values as a function of collector current; typical values BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 12 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors aaa-027452 -1.0 IB (mA) = -11.0 IC (A) -8.8 -0.8 aaa-027453 25 -9.9 Cc (pF) -7.7 20 -6.6 -5.5 -0.6 15 -4.4 -3.3 -0.4 -1.1 -0.2 0 10 -2.2 0 -1 -2 -3 -4 VCE (V) 5 -5 0 Tamb = 25 °C Fig. 27. BC807-25H: Collector current as a function of collector-emitter voltage; typical values aaa-027454 60 0 -10 -20 -30 -40 -50 VCB (V) f = 1 MHz Tamb = 25 °C Fig. 28. BC807-25H: Collector capacitance as a function of collector-base voltage; typical values aaa-027455 103 Ce (pF) fT (MHz) 40 (1) 102 (2) 20 0 0 -1 -2 -3 -4 VEB (V) -5 f = 1 MHz Tamb = 25 °C Fig. 29. BC807-25H: Emitter capacitance as a function of emitter-base voltage; typical values 10 -1 -10 -102 IC (mA) -103 f = 1 MHz Tamb = 25 °C (1) VCE = -5 V (2) VCE = -1 V Fig. 30. BC807-25H: Transition frequency as a function of collector current; typical values BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 13 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors aaa-029568 1200 aaa-027457 800 hFE hFE (1) 900 600 (2) (1) (3) (2) (4) (5) (3) 600 400 (6) (7) (8) 300 0 -10-1 -1 200 -10 -102 IC(mA) 0 -10-1 -103 VCE = -1 V (1) Tamb = 175 °C (2) Tamb = 150 °C (3) Tamb = 125 °C (4) Tamb = 100 °C (5) Tamb = 85 °C (6) Tamb = 25 °C (7) Tamb = -40 °C (8) Tamb = -55 °C -1 -102 -10 IC (mA) -103 Tamb = 25 °C (1) VCE = -5 V (2) VCE = -2 V (3) VCE = -1 V Fig. 32. BC807-40H: DC current gain as a function of collector current; typical values Fig. 31. BC807-40H: DC current gain as a function of collector current; typical values aaa-029572 -1.2 aaa-027459 -1 VBE (V) VBE (V) (1) -0.9 (2) (3) -0.8 (1) (2) -0.8 (4) -0.7 (3) -0.4 (5) (7) 0 -10-1 (6) -0.6 (8) -1 -10 -102 IC (mA) -103 VCE = -1 V (1) Tamb = -55 °C (2) Tamb = -40 °C (3) Tamb = 25 °C (4) Tamb = 85 °C (5) Tamb = 100 °C (6) Tamb = 125 °C (7) Tamb = 150 °C (8) Tamb = 175 °C -0.5 -10-1 -1 -10 -102 IC (mA) -103 Tamb = 25 °C (1) VCE = -1 V (2) VCE = -2 V (3) VCE = -5 V Fig. 34. BC807-40H: Base-emitter voltage as a function of collector current; typical values Fig. 33. BC807-40H: Base-emitter voltage as a function of collector current; typical values BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 14 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors aaa-029569 -1.2 aaa-027461 -1.0 VBEsat (V) VBEsat (V) -0.9 -0.8 (1) (3) -0.4 (5) (7) -0 -10-1 (1) (2) (2) (4) -0.7 (6) (8) -1 (3) (4) -0.8 -0.6 -10 -102 IC (mA) -103 IC / IB = 10 (1) Tamb = -55 °C (2) Tamb = -40 °C (3) Tamb = 25 °C (4) Tamb = 85 °C (5) Tamb = 100 °C (6) Tamb = 125 °C (7) Tamb = 150 °C (8) Tamb = 175 °C -0.5 -10-1 -1 -10 -102 IC (mA) -103 Tamb = 25 °C (1) IC / IB = 10 (2) IC / IB = 20 (3) IC / IB = 50 (4) IC / IB = 100 Fig. 36. BC807-40H: Base-emitter saturation voltage as a function of collector current; typical values Fig. 35. BC807-40H: Base-emitter saturation voltage as a function of collector current; typical values aaa-029570 -1 aaa-027463 -1 VCEsat (V) VCEsat (V) -10-1 -10-1 (1) (2) (1) (2) (3) (4) (3) -10-2 -10-3 -10-1 -10-2 -1 IC / IB = 10 (1) Tamb = 175 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = -40 °C -10 -102 IC (mA) -103 -10-3 -10-1 (4) -1 -10 -102 IC (mA) -103 Tamb = 25 °C (1) IC / IB = 100 (2) IC / IB = 50 (3) IC / IB = 20 (4) IC / IB = 10 Fig. 37. BC807-40H: Collector-emitter saturation voltage Fig. 38. BC807-40H: Collector-emitter saturation voltage as a function of collector current; typical values as a function of collector current; typical values BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 15 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors aaa-027464 -1.0 IB (mA) = -11.0 IC (A) Cc (pF) -8.8 -7.7 -0.8 -6.6 aaa-027465 20 -9.9 16 -5.5 -4.4 -3.3 -0.6 12 -2.2 -0.4 8 -1.1 -0.2 0 4 0 -1 -2 -3 -4 VCE (V) -5 0 Tamb = 25 °C Fig. 39. BC807-40H: Collector current as a function of collector-emitter voltage; typical values aaa-027466 50 0 -10 -20 -30 -40 -50 VCB (V) f = 1 MHz Tamb = 25 °C Fig. 40. BC807-40H: Collector capacitance as a function of collector-base voltage; typical values aaa-027467 103 Ce (pF) 40 fT (MHz) 30 (1) 102 20 (2) 10 0 0 -1 -2 -3 -4 VEB (V) -5 f = 1 MHz Tamb = 25 °C Fig. 41. BC807-40H: Emitter capacitance as a function of emitter-base voltage; typical values 10 -1 -10 -102 IC (mA) -103 f = 1 MHz Tamb = 25 °C (1) VCE = -5 V (2) VCE = -1 V Fig. 42. BC807-40H: Transition frequency as a function of collector current; typical values 8. Test information 8.1. Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 16 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors 9. Package outline Table 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 18-03-12 Fig. 43. Package outline TO-236AB (SOT23) BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 17 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors 10. Soldering Table 10. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot23_fr Fig. 44. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot23_fw Fig. 45. Wave soldering footprint for TO-236AB (SOT23) BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 18 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BC807H_SER v.1 20190305 Product data sheet - BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 - © Nexperia B.V. 2019. All rights reserved 19 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 12. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 20 / 21 BC807H series Nexperia 45 V, 500 mA PNP general-purpose transistors Contents 1. Product profile.............................................................. 1 1.1. General description......................................................1 1.2. Features and benefits..................................................1 1.3. Applications................................................................. 1 1.4. Quick reference data................................................... 1 2. Pinning information......................................................2 3. Ordering information....................................................2 4. Marking.......................................................................... 2 5. Limiting values............................................................. 3 6. Thermal characteristics............................................... 5 7. Characteristics.............................................................. 7 8. Test information..........................................................16 8.1. Quality information.....................................................16 9. Package outline.......................................................... 17 10. Soldering................................................................... 18 11. Revision history........................................................ 19 12. Legal information......................................................20 © Nexperia B.V. 2019. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 5 March 2019 BC807H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 March 2019 © Nexperia B.V. 2019. All rights reserved 21 / 21