FMMT591

FMMT591 PNP Silicon Epitaxial Planar Transistor Features SOT-23  Low equivalent on-resistance  Be complementary with FMMT491 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 80 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 1 A Peak Pulse Current -ICM 2 A Power Dissipation PD 500 mW Junction Temperature TJ 150 ℃ TSTG -55 to 150 ℃ Storage Temperature Range www.slkormicro.com 1 FMMT591 Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Min. Typ. Max. 100 - - HFE 100 300 80 15 - -ICBO - - 100 nA DC Current Gain note1 at -VCE = 5 V, -IC = 1 mA at -VCE = 5 V, -IC = 500 mA at -VCE = 5 V, -IC = 1 A at -VCE = 5 V, -IC = 2 A - Unit - Collector Base Cutoff Current at -VCB = 60 V Emitter Base Cutoff Current at -VEB = 5.6 V Collector Base Breakdown Voltage at -IC = 100 μA Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 100 μA -IEBO - - 100 nA -V(BR)CBO 80 - - V -V(BR)CEO 60 - - V -V(BR)EBO 5 - - V Collector Emitter Saturation Voltage note1 at -IC = 500 mA, -IB = 50 mA at -IC =1 A, -IB = 100 mA -VCE(sat) - - 300 600 mV -VBE(sat) - - 1.2 V -VBE(on) - - 1 V FT 150 - - MHz - 10 pF Base Emitter Saturation Voltage note1 at -IC = 1 A, -IB = 100 mA Base Emitter Voltage note1 at -VCE = 5 V, -IC = 1 A Transition Frequency at -VCE = 10 V, -IC = 50 mA, f= 100MHz Collector Output Capacitance Cob at -VCB = 10 V, f= 1MHz Note1: Measured under pulsed condition, Pulse width ≤ 300uS, Duty cycle2%. www.slkormicro.com 2 FMMT591 -400 -1000 -2mA -1.8mA -1.6mA DC CURRENT GAIN hFE o C I -350 -1.4m A -1.2mA COLLECTOR CURRENT (mA) -300 -250 -1.0mA -800uA -200 -600uA -150 -400uA -100 IB=-200uA Ta=100 C o Ta=25 C -100 VCE=-5V -10 -50 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE -10 VCE -12 -1 -10 -100 COLLECTOR CURRENT (V) IC -1000 (mA) -1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -2000 -100 Ta=100℃ Ta=25℃ -10 -1000 Ta=25 ℃ Ta=100℃ β=10 -1 -0. 1 -1 -100 -10 COLLECTOR CURRENT β=10 -100 -0.1 -1000 -100 -10 COLLECTOR CURRENT IC (mA) IC -1000 (mA) 1000 -1000 f=1MHz IE=0/ IC=0 -800 o (pF) Ta=25 C Ta=25℃ BASE-EMMITER VOLTAGE (mV) VBE -1 -400 CAPACITANCE C -600 Ta=100 ℃ -200 VCE=-5V -1 -100 -10 COLLCETOR CURRENT IC fT TRANSITION FREQUENCY (MHz) VCE=-10V Ta = 25℃ 10 www.slkormicro.com 10 0 4 6 8 10 12 14 16 VR (V) 18 20 600 500 400 300 200 100 0 -60 -10 IC 2 REVERSE VOLTAGE 100 COLLECTOR CURRENT Cob (mA) 500 -3 Cib -1000 COLLECTOR POWER DISSIPATION PC (mW) -0 -0.1 100 0 25 50 75 AMBIENT TEMPERATURE (mA) 3 100 Ta (℃) 125 150 FMMT591 Package Outline(SOT-23) Symbol Dimensions in millimeter Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 L1 0.550REF L 0.300 θ 0° 0.500 8° Ordering Information Device FMMT591 www.slkormicro.com Package SOT-23 Reel Dimension (inch) 7 4 Shipping 3,000