WSP4067

WSP4067 N&P-Channel MOSFET Product Summery General Description The WSP4067 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 40V 21mΩ 7.5A -40V 38mΩ -5.5A The WSP4067 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Applications z High Frequency Point-of-Load Synchronous Buck Converter. z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOP-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 1 1 ID@TC=25℃ ID@TC=70℃ IDM P-Channel Units 40 -40 V ±20 ±20 V 7.5 -5.5 A 6 -4.5 A 30 -20 A N-Channel Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy 25 25 mJ IAS Avalanche Current 10 10 A Total Power Dissipation 2 2 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range 150 PD@TC=25℃ 3 4 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw 1 Thermal Resistance Junction-Case Page 1 Typ. Max. Unit --- 62.5 ℃/W --- 50 ℃/W Dec.2014 WSP4067 N&P-Channel MOSFET N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.067 --- V/℃ VGS=10V , ID=6A --- 16 21 VGS=4.5V , ID=5A --- 18 25 1.5 2 2.5 V --- -5.24 --- mV/℃ VDS=32V , VGS=0V , TJ=85℃ --- --- 1 VDS=32V , VGS=0V , TJ=85℃ --- --- 30 VGS=VDS , ID =250uA VGS(th) Temperature Coefficient mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=8A --- 24 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 --- Ω Qg Total Gate Charge (4.5V) --- 15.7 22 Qgs Gate-Source Charge --- 3.24 --- --- 2.75 --- Qgd VDS=20V , VGS=10V , ID=6A Gate-Drain Charge nC --- 7.8 --- Rise Time VDD=20V , VGS=10V , --- 6.9 --- Turn-Off Delay Time RG=6Ω, ID=1A ,RL=20Ω --- 22.4 --- Fall Time --- 4.8 --- Ciss Input Capacitance --- 815 --- Coss Output Capacitance --- 95 --- Crss Reverse Transfer Capacitance --- 60 --- Min. Typ. Max. Unit 11.2 --- --- mJ Min. Typ. Max. Unit --- --- 6.0 A --- --- 24 A --- --- 1.1 V Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=20V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=16A Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=1.7A,TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t